MB85R2001 Search Results

Contextual Info: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.

Fujitsu IR c code

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-1E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

FUJITSU FRAM

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-5E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R2001PFTN-GE1

Abstract: MB85R2001
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-3Ea Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R2001

Abstract: MB85R2001PFTN-GE1
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-2E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

s29gl032n90

Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Contextual Info: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,