NIKOSEM Search Results

N3856V

Abstract: n3856 tl431 and pc817 pin diagram of pc817 PIC PWM voltage mode pwm controler 2SC945 typical application PC817-4 pwm sop-8 2SC945
Contextual Info: NIKO-SEM Synchronous Rectification Controller N3856V SOP- 8 GENERAL DESCRIPTION FEATURES The N3856V is a low cost , high efficiency, full featured ,synchronous rectification controller that specifically designed for the synchronous rectification applications of the Flyback AC/DC

P2003evg

Abstract: P2003EV P2003 p-Channel Logic Level Enhancement Mode Field Effect Transistor SOP 3.9 niko-sem Transistor 9A
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P2003EVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 20mΩ -9A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P1203BS

Abstract: P1203B
Contextual Info: P1203BS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P3056LD

Abstract: DIODE P3056LD niko P3056LD p3056LD NIKO
Contextual Info: P3056LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P2803NVG

Abstract: SEM 2005 niko-sem p2803nvg NIKO-SEM P2803 "Field Effect Transistor" Field Effect Transistor p2803n DSA0025594 P-CHANNEL
Contextual Info: NIKO-SEM P2803NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 27.5mΩ 7A P-Channel -30 34mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

SEM 2006

Abstract: P1308ATG transistor sem 2006
Contextual Info: P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 13mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P5506

Abstract: P5506BVG
Contextual Info: P5506BVG N-Channel Logic Level Enhancement NIKO-SEM SOP-8 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

l1117 18

Abstract: l1117 1.2 L1117 L1117 33 l1117 g L1117-3.3 L1117-1.8 l111718 voltage regulator l1117 L1117-18
Contextual Info: NIKO-SEM 1A Fixed and Adjustable Low Dropout Linear Regulator LDO L1117 Series SOT-223, TO-252, TO-220,TO-263 GENERAL DESCRIPTION FEATURES The L1117 Series are positive and low dropout three-terminal voltage regulators with 1A output current capability. These devices

P06P03LDG

Abstract: nikos P06P03 Field Effect Transistor p-Channel Logic Level Enhancement Mode niko-sem TO252 Niko Semiconductor sm 17 35 tc P06P03LD
Contextual Info: P06P03LDG P-Channel Logic Level Enhancement NIKO-SEM Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P5506BDG

Abstract: P5506 niko-sem field effect transistor AUG-19-2004
Contextual Info: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P5506BDG TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 10A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P2503BDG

Abstract: P2503BD nikos EQUIVALENT* P2503 P2503 niko-sem
Contextual Info: NIKO-SEM P2503BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 12A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Contextual Info: Single P-channel MOSFET ELM32401LA-S •General description ■Features ELM32401LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-60V Id=-7A Rds(on) < 90mΩ (Vgs=-10V) Rds(on) < 135mΩ (Vgs=-4.5V)

Contextual Info: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)

P75N02LDG

Abstract: P75N02
Contextual Info: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)

ELM36405EA

Contextual Info: 单 P 沟道 MOSFET ELM36405EA-S •概要 ■特点 ELM36405EA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-5A ·Rds on < 44mΩ (Vgs=-4.5V) ·Rds(on) < 70mΩ (Vgs=-2.5V) ·Rds(on) < 100mΩ (Vgs=-1.8V)

ELM32428LA

Contextual Info: 单 N 沟道 MOSFET ELM32428LA-S •概要 ■特点 ELM32428LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=75A ·Rds on < 7mΩ (Vgs=10V) ·Rds(on) < 10mΩ (Vgs=4.5V) ■绝对最大额定值 项目

ELM33401CA

Contextual Info: 单 P 沟道 MOSFET ELM33401CA-S •概要 ■特点 ELM33401CA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-3A ·Rds on < 85mΩ (Vgs=-10V) ·Rds(on) < 118mΩ (Vgs=-4.5V) ·Rds(on) < 215mΩ (Vgs=-2.5V)

Contextual Info: コンプリメンタリーパワー MOSFET ELM34608AA-N •概要 ■特長 ELM34608AA－N は 低 入 力 容 N チャンネル P チャンネル 量 低電圧駆動、 低オン抵抗とい ・ Vds=60V う特性を備えた大電流 MOSFET ・ Id=4.5A

P5504EDG

Contextual Info: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)

ELM32418LA

Contextual Info: 单 N 沟道 MOSFET ELM32418LA-S •概要 ■特点 ELM32418LA-S 是 N 沟道低输入电容，低工作电压， •Vds=40V 低导通电阻的大电流 MOSFET。 ·Id=20A ·Rds on < 15mΩ (Vgs=10V) ·Rds(on) < 27mΩ (Vgs=7V) ■绝对最大额定值 项目

Contextual Info: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)

P60N03LDG

Abstract: P60N03LD
Contextual Info: シングル N チャンネル MOSFET ELM32422LA-S •概要 ■特長 ELM32422LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=60A ・ Rds on < 13.8mΩ (Vgs=10V) ・ Rds(on) < 17.8mΩ (Vgs=7V)

Contextual Info: シングル P チャンネル MOSFET ELM34V555A-N •概要 ■特長 ELM34V555A-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-6A ・ Rds on < 28mΩ (Vgs=-10V) ・ Rds(on) < 45mΩ (Vgs=-4.5V)

ELM34402AA

Abstract: P2003b p2003bvg
Contextual Info: 单 N 沟道 MOSFET ELM34402AA-N •概要 ■特点 ELM34402AA-N 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=8A ·Rds on < 20mΩ (Vgs=10V) ·Rds(on) < 32mΩ (Vgs=4.5V) ■绝对最大额定值 项目