P06P03 Search Results

P06P03LDG

Abstract: nikos P06P03 Field Effect Transistor p-Channel Logic Level Enhancement Mode niko-sem TO252 Niko Semiconductor sm 17 35 tc P06P03LD
Contextual Info: P06P03LDG P-Channel Logic Level Enhancement NIKO-SEM Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P06P03LD

Abstract: P06P03 p-Channel Logic Level Enhancement Mode nikos niko-sem "Field Effect Transistor" nikosem
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P06P03LD Mode Field Effect Transistor TO-252 D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P06P03

Abstract: p-Channel Logic Level Enhancement Mode P06P03LV NIKO-SEM nikos field effect transistor
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P06P03LV Mode Field Effect Transistor SOP-8 D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P06P03LVG

Abstract: P06P03 niko-sem
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P06P03LVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Contextual Info: Single P-channel MOSFET ELM32405LA-S •General description ■Features ELM32405LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)

P06P03

Abstract: P06P03LDG P06P03LD
Contextual Info: Single P-channel MOSFET ELM32405LA-S •General description ■Features ELM32405LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)

Contextual Info: シングル P チャンネル MOSFET ELM32405LA-S •概要 ■特長 ELM32405LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-12A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

Contextual Info: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)

ELM34417AA

Contextual Info: 单 P 沟道 MOSFET ELM34417AA-N •概要 ■特点 ELM34417AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-6A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值

ELM32405LA

Contextual Info: 单 P 沟道 MOSFET ELM32405LA-S •概要 ■特点 ELM32405LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-30V ·Id=-12A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值

Contextual Info: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)

P06P03

Contextual Info: シングル P チャンネル MOSFET ELM34417AA-N •概要 ■特長 ELM34417AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-6A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)