P5506BVG Search Results
P5506BVG Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| P5506BVG | Niko Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Original | 295.85KB | 5 | ||
| P5506BVG | Niko Semiconductor | N-Channel Logic Level Enhancement FET | Original | 295.86KB | 5 |
P5506BVG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
P5506
Abstract: P5506BVG
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Original |
p5506bvgsep-30-2004p5506 | |
CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
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Original |
5ce120c5ke120ca5ce120ca5ce12a+14 | |
ELM34404AAContextual Info: 单 N 沟道 MOSFET ELM34404AA-N •概要 ■特点 ELM34404AA-N 是 N 沟道低输入电容,低工作电压, •Vds=60V 低导通电阻的大电流 MOSFET。 ·Id=5.5A ·Rds on < 55mΩ (Vgs=10V) ·Rds(on) < 75mΩ (Vgs=4.5V) ■绝对最大额定值 项目 |
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elm34404aa-np5506bvgsep-30-2004elm34404aa | |
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Contextual Info: シングル N チャンネル MOSFET ELM34404AA-N •概要 ■特長 ELM34404AA-N は低入力容量 低電圧駆動、 低 ・ Vds=60V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=5.5A ・ Rds on < 55mΩ (Vgs=10V) ・ Rds(on) < 75mΩ (Vgs=4.5V) |
Original |
elm34404aa-np5506bvgsep-30-2004 | |
P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
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Original |
o-263p45n02lsgp45n03ltgp75n02lsg+16 | |
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Contextual Info: Single N-channel MOSFET ELM34404AA-N •General description ■Features ELM34404AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=5.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) |
Original |
elm34404aa-np5506bvgsep-30-2004 | |
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Contextual Info: Single N-channel MOSFET ELM34404AA-N •General description ■Features ELM34404AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=5.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) |
Original |
elm34404aa-np5506bvgsep-30-2004 |