NEW TRANSISTOR DATA SHEET Search Results

BFQ19

Abstract: BFQ19C
Contextual Info: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BFQ149

Abstract: nxp power microwave transistor
Contextual Info: BFQ149 PNP 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BFQ591

Abstract: transistor 09013 NPN 09013 NPN DIN45004B philips MATV amplifiers
Contextual Info: BFQ591 NPN 7 GHz wideband transistor Rev. 04 — 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: Order th is data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor W ith M onolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and

BSS83

Abstract: MDA250 Mosfet n-channel BSS83-N
Contextual Info: BSS83 MOSFET N-channel enhancement switching transistor Rev. 03 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

6267 ic pin details

Contextual Info: BFG92A/X NPN 5 GHz wideband transistor Rev. 06 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

2SC5651

Abstract: NE688 NE688M23 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height

2SC5652

Abstract: NE685 NE685M23 S21E RF TRANSISTOR 10 GHZ low noise
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height

m03 transistor

Abstract: NE AND micro-X nec 08e 2SC5434 NE680 NE680M03 S21E BF179 bjt npn m03 low noise transistor bF 179
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:

2SC5614

Abstract: NE856 NE856M13 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M13 OUTLINE DIMENSIONS Units in mm FEATURES • • +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –

Contextual Info: MOTOROLA Order this document by MMUN2211LT1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2211LT1 SER IES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias R esistor Transistor M UN 2211T1 S E R IE S NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola Preferred D e vices This new series of digital transistors is designed to replace a single device and its

Contextual Info: MOTOROLA Order this document by MTB52N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB52N06VL TMOS V™ Power Field Effect Transistor D2PAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance

Contextual Info: MOTOROLA O rder this docum ent by M TB52N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB52N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance

T0400NA18A

Abstract: T1400TA18A WTC140AAC18 WTC40AAC18 westcode igbt
Contextual Info: Old Part Number PDF Data Sheet Available GATE CONTROLLED DEVICE - Insulated Gate Bi-polar Transistor - Capsule Type VCES VGES New Part Number IC Note 2 ICRM (Note 2) IF IFRM PMAX Tj (Note 3) Tstg Rth(j-hs) (IGBT) (V) (V) (A) (A) (A) (A) (W) ( C) ( C) Double

Contextual Info: MOTOROLA Order this document by MTP3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055VL TMOS V™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This

Contextual Info: MOTOROLA O rder this docum ent by M TP5P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP5P06V TMOS V Power Field Effect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This

DDTC144EUA

Abstract: 10KW 22KW DDTC114EUA DDTC115EUA DDTC123EUA DDTC124EUA DDTC143EUA J-STD-020A
Contextual Info: DDTC R1 = R2 SERIES UA NPN PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 A OUT Mechanical Data · · ·

DDTA113TUA

Abstract: DDTA114TUA DDTA115TUA DDTA123TUA DDTA124TUA DDTA125TUA DDTA143TUA DDTA144TUA J-STD-020A
Contextual Info: DDTA R1-ONLY SERIES UA PNP PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistor, R1 only A C B C Mechanical Data · ·

marking RK sot323

Abstract: N5212 N5211
Contextual Info: Order this data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias R esisto r T ra n s is to r NPN Silicon Surface Mount Transistor W ith M onolithic Bias Resistor N etw o rk M U N5211T1 M U N5212T1 M U N5213T1 M U N 5214T1 This new series of digital transistors is designed to replace a single device and

DCX114YU

Abstract: sot 363 marking c14 DCX143TU DCX144EU J-STD-020A 22KW DCX114EU DCX114TU DCX123JU DCX124EU
Contextual Info: DCX xxxx U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · Epitaxial Planar Die Construction Built-In Biasing Resistors CXX YM Mechanical Data · · · · · · · · SOT-363 A Case: SOT-363, Molded Plastic

POWER SUPPLY BOARD 20 94V0

Abstract: 22KW DDA114EU DDA114TU DDA114YU DDA123JU DDA124EU DDA143TU DDA144EU J-STD-020A
Contextual Info: DDA xxxx U PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR • · Epitaxial Planar Die Construction Built-In Biasing Resistors Mechanical Data · · · · · · · · SOT-363 A PXX YM NEW PRODUCT Features Min Max A 0.10 0.30 B 1.15 1.35

7430 ic data sheet

Abstract: MSA094 339 marking code transistor BP317 LV2327E40R SC15 sot445
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LV2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

Contextual Info: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SCANSWITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors "Motorola Preferred Device POWER TRANSISTOR 15 AMPERES 1500 VOLTS — VcES