NEW ENGLAND SEMICONDUCTOR TRANSISTORS Search Results

Contextual Info: JANS Program New Product Announcement New England Semiconductor announces its New Line of Junction Field Effect Transistors JFET's These devices will be available as JAN, JANTX, JANTXV as well as commercial. Available families are: MIL-PRF-19500/375 - 2N3821, 2N3822, 2N3823

NS11016

Contextual Info: AŒ y ^ IP NS11016 NEW ENGLAND SEMICONDUCTOR NPN SILICON DARLINGTON POWER TRANSISTORS • GENERAL PURPOSE AMPLIFIER • LOW FREQUENCY SWITCHING • HIGH DC CURRENT GAIN • MONOLITHIC CONSTRUCTION • BUILT IN BASE EMITTER SHUNT RESISTORS • CONFORMAL COATED

2N3738

Abstract: 2N3739 new england semiconductor transistors
Contextual Info: 2N3738^ 2N3739* MW ^NEW ENGLAND SEMICONDUCTOR ^ *also available as JAN, JANTX, HIGH VOLTAGE SILICON POWER TRANSISTORS 1.0 AMPERE POWER TRANSISTORS NPN SILICON .designed for high-speed sw itching, linear am plifier applications, high-voltage operational am plifiers, sw itching regulators, converters,

Contextual Info: 0 /V E F ^ IP NSX14 r NEW ENGLAND SEMICONDUCTOR EPITAXIAL BASE PNP SILICON TRANSISTORS • • LF LARGE SIGNAL POWER AMPLIFIER MEDIUM CURRENT SWITCHING ABSOLUTE RA TIN G S RA TING S Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: Ct\fiiE5r Back to Bipolar Small Signal C9853 ^ QP ^NEW ENGLAND SEMICONDUCTOR LOW LEVEL SWITCHING SILICON EPITAXIAL JUNCTION PNP TRANSISTORS • LOW EC (sat • HIGH BVebo • ULTRA LOW LEAKAGE • LOW C* ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS M H A M ETC II

NSX14

Contextual Info: 0/V E F ^ IP NSX14 NEW ENGLAND SEMICONDUCTOR EPITAXIAL BASE PNP SILICON TRANSISTORS • • LF LARGE SIGNAL POWER AMPLIFIER MEDIUM CURRENT SWITCHING A BSO LU TE R A TIN G S R ATING S Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage

2N4300

Contextual Info: 0/V E F ^ IP 2N4300 NEW ENGLAND SEMICONDUCTOR NPN EPITAXIAL PLANAR SILICON POWER TRANSISTORS NPN EPITAXIAL PLANAR SILICON POWER TRANSISTOR . for power-amplifier and high-speed-switching applications. • • • • 15 WATT @ 100°C CASE TEMPERATURE MAXIMUM VCE SAT = 0.3 VOLTS @ 1.0 AMP. Ic

2N697

Contextual Info: 0 /V E F ^ IP 2N697 NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL NPN TRANSISTORS • HIGH FREQUENCY • HIGH CURRENT GAIN @ • LOW SATURATION VOLTAGE NPN SMALL-SIGNAL TRANSISTOR 150 mA TO-39 TO-205AD MAXIMUM RATINGS RATINGS C ollecto r-E m itter V oltage

T0204

Abstract: NS11015
Contextual Info: AŒ y ^ IP NS11015 NEW ENGLAND SEMICONDUCTOR PNP SILICON DARLINGTON POWER TRANSISTORS • • • • • • 30 AMPERE PNP DARLINGTON POWER TRANSISTOR GENERAL PURPOSE AM PLIFIER LOW FREQUENCY SW ITCHING HIGH DC CURRENT GAIN MONOLITHIC CONSTRUCTION BUILT IN BASE EM ITTER SHUNT RESISTORS

2N3725

Abstract: TRANSISTOR 2SC 635
Contextual Info: 0/V E F ^ IP 2N3725 NEW ENGLAND SEMICONDUCTOR NPN SWITCHING TRANSISTORS • • • • FAST SWITCHING HIGH VOLTAGE HIGH CURRENT GAIN LOW SATURATION VOLTAGE M A X IM U M R A TIN G S R A TIN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N706A

Abstract: npn transistor wc 2N706 2n706a transistor J 2N706A
Contextual Info: 0 /V E F ^ IP 2N706A NEW ENGLAND SEMICONDUCTOR SILICON SWITCHING NPN TRANSISTORS • • • FAST SWITCHING LOW SATURATION VOLTAGE HIGH FREQUENCY M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage

2N869A

Contextual Info: 0 /V E F ^ IP 2N869A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE • FAST SWITCHING M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage

2N1893

Abstract: BBV transistor lt 860
Contextual Info: TifUEF ^ 9 m 2NI893* NEW ENGLAND SEMICONDUCTOR *also available as JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS • F A M SWITCHING • liJG H FREQUENCY • H IG H C U R R E N T G A IN NPN GENERAL PURPOSE TRANSISTOR TÜ-3S T0-1* SAD MAXIMUM RATINGS

2N2945

Abstract: 2N2946A jan 2n5582 2N2604 2N2605 2N2946 2N3485 2N3486 TO46 new england semiconductor transistors
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I 1H VcEO DEVICE sus TYPE VOLTS 2N2604 45 2N2605 45 2N2944AA 10 2N2945 20 2N2945AA 20 2N2946 35 2N2946AA 35 2N3485 40 2N3485AA 60 2N3486 40 2N3486AA 60 2N3764A 40 2N3765A 60

2N930A

Contextual Info: 0 /V E F ^ IP 2N930A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL NPN TRANSISTORS • LOW LEAKAGE • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: Back to Bipolar Small Signal 0 /V E F ^ IP 2N869A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE • FAST SWITCHING M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage

New England Semiconductor

Abstract: transistor D 1666 2N3250
Contextual Info: 0 /V E F ^ IP 2N3250 NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH VOLTAGE • HIGH FREQUENCY • HIGH CURRENT GAIN PNP GENERAL PURPOSE TRANSISTOR 1 E m itter TO-18 M A X IM U M R A T IN G S RATINGS SYMBOL 2N3250 UNITS VcEO -40 V dc

2N5581A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B

NS11032

Abstract: T0204
Contextual Info: NS11032 ^ IP NEW ENGLAND SEMICONDUCTOR NPN SILICON DARLINGTON POWER TRANSISTORS • • • • • • 50 AMPERE NPN DARLINGTON POWER TRANSISTOR G EN ER A L PURPO SE A M PLIFIE R LO W FR EQ U EN C Y SW ITCH ING HIGH DC C U R RE N T GAIN M O NO LITH IC CO NSTRU CTIO N

NSX16

Abstract: T4 0570
Contextual Info: NSX16 ^MW^NEW ENGLAND SEMICONDUCTOR EPIBASE PNP SILICON TRANSISTORS • • LF LARG E SIG N A L PO W ER A M PLIFIC A TIO N JU N C T IO N TO C ASE - R th - - 7°CAV M A X IM U M R A TIN G S R A TIN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

ROE EB

Abstract: NS11033 fd300
Contextual Info: AŒ y ^ IP NS11033 NEW ENGLAND SEMICONDUCTOR PNP SILICON DARLINGTON POWER TRANSISTORS • • • • • • 50 AMPERE PNP DARLINGTON POWER TRANSISTOR G EN ER A L PURPO SE A M PLIFIE R LO W FR EQ U EN C Y SW ITCH ING HIGH DC C U R RE N T GAIN M O N O LITH IC CO NSTRUC TIO N

Contextual Info: NSX16 ^MW ^NEW ENGLAND SEMICONDUCTOR EPIBASE PNP SILICON TRANSISTORS • • LF LA RG E SIG N A L P O W E R A M PL IFIC A T IO N JU N C T IO N T O CASE - R th - - 7°CAV M A X IM U M RA TING S R A TIN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PA CK A G E PN P T O -46 V C EO sus VOLTS Ic (m ax ) A M PS 2N 2605 45 0.03 150@ 0.5/5 2N 2945 20 0.1 2N 2945A 20 2N 2946 D E V IC E TY PE hfE @ Ic/ V CE m in /m ax @ m A /V ^ C E (s a t) @ I c /I b

Contextual Info: Back to Bipolar Power Transistors NES3716Z NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switiching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating Collector-Emitter Voltage