NEC CEL HIGH FREQUENCY TRANSISTOR Search Results

NE3515S02

Abstract: NE3515S02-T1C-A NE3515S02-T1D-A HS350 NE3515S02-T1C lnb ku-band GaAs S2p NE3515S02
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA

ne3511s02 s2p

Abstract: NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS

NE3510M04-A

Abstract: NE3510M04 HS350 NE3510M04-T2 NE3510M04-T2-A
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only

EN60747-5-2

Abstract: M601 PS2702-1 PS2702-1-F3 PS2702-1-F4 PS2702-1-V VDE0884 ps2702 ps2702-1-f3-a
Contextual Info: PHOTOCOUPLER PS2702-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected phototransistor.

PS2506-4

Abstract: ps2506-4-a PS2506L-1-E3 PS2506L-2 PS2506L-2-E3 PS2506L-4 PS2506-1 PS2506-2 PS2506L-1 PS2506-2-A
Contextual Info: PHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

NEC 2561

Abstract: 2561 nec nec PS2561 nec 2561 datasheet NEC 2561 transistor nec 2561 equivalent nec pc 2561 2561 photocoupler photocoupler 2561 NEC 2561 de
Contextual Info: PHOTOCOUPLER PS2561-1,PS2561L-1,PS2561L1-1,PS2561L2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2561-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon

NEC 2562

Abstract: PS2562-1-A EN60747-5-2 PS2562-1 PS2562L-1 PS2562L1-1 PS2562L-1-E3 PS2562L2-1 PS2562L2-1-E3 VDE0884
Contextual Info: PHOTOCOUPLER PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2562-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington

BS415

Abstract: BS7002 PS2653 PS2653L2 PS2654 PS2654L2 PS2654L4
Contextual Info: DATA SHEET POTOCOUPLERS PS2653, PS2654, PS2653L2, PS2654L4 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN PHOTOCOUPLER DESCRIPTION PS2653, PS2654 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected photo-transistor in a plastic DIP Dual In-line Package .

NE55410GR-T3-AZ

Abstract: TL15 NE55410GR NE55410 ldmos nec
Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

transistor

Abstract: UPA810T-A UPA810T-T1-A NE856 S21E UPA810T UPA810T-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN:

UPA810T-T1-A

Abstract: NE856 S21E UPA810T UPA810T-A UPA810T-T1 ultra low noise NPN transistor
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN:

nec fo 134

Abstract: B102F
Contextual Info: DATA SHEET PHOTOCOUPLERS PS2651, PS2652, PS2651L2, PS2652L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN PHOTOCOUPLER DESCRIPTION P S2651, PS2652 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon photo­ transistor in a plastic DIP Dual In-line Package .

Contextual Info: DATA SHEET POTOCOUPLERS PS2653, PS2654, PS2653L2, PS2654L4 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN PHOTOCOUPLER DESCRIPTION PS2653, PS2654 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected photo-transistor in a plastic DIP Dual In-line Package .

nec 2651

Abstract: ps2651-1
Contextual Info: DATA SHEET N E C PHOTO COUPLERS P S 2651 9 PS2652 P S 2651L2, PS2652L2 ELECTRON DEVICE LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 P IN PHOTO COUPLER D E S C R IP T IO N P S 2651, PS2652 are optically coupled isolators containing a GaAs light em itting diode and an NPN silicon photo-transistor in a plastic D IP Dual

NESG2101M16

Abstract: NESG2101M16-T3-A S21E
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz

Contextual Info: DATA SHEET EET PHOTO COUPLERS NEC aEtrm oN PS2653 , PS2654 PS2653L2, PS2654L2 d ev ic e ‘ U ISOLATION i c m a t i r\ m xVOLTAGE /niT A fic LONG CREEPAGE TYPE HIGH 6 PIN PHOTO COUPLER DESCRIPTION PS2653, PS2654 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlingtonconnected photo-transistor in a plastic DIP Dual In-line Package .

NESG2031M16

Abstract: NESG2031M16-T3-A S21E
Contextual Info: NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz

2532L4

Contextual Info: PHOTO COUPLERS PS2532 - 1 , - 2 , - 4 PS2532L-1, -2, -4 HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTO COUPLER SERIES - n e p o c s e r ie s - DESCRIPTION PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and

diode sy 710

Contextual Info: DATA SHEET ' PHOTOCOUPLERS PS2706-1, PS2706-2, PS2706-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE SOP MULTI PHOTOCOUPLER - NEPOC Series - DESCRIPTION The P S 2706-1, -2 and -4 series are optically coupled isolator containing GaAs light em itting diodes and an NPN

transistor KF 507

Abstract: 2SC5435 NE685 NE685M03 NE685M03-A NE685M03-T1-A S21E
Contextual Info: NPN SILICON TRANSISTOR NE685M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:

NE681M03

Abstract: NE AND micro-X 2SC5433 NE681 NE681M03-A NE681M03-T1-A S21E
Contextual Info: NEC's NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

BF-104

Abstract: NE687M03 2SC5436 NE687 NE687M03-A NE687M03-T1-A S21E BJT IC Vce
Contextual Info: NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • • • OUTLINE DIMENSIONS Units in mm NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:

NE AND micro-X

Abstract: 2SC5432 NE856 NE856M03 NE856M03-A NE856M03-T1-A S21E
Contextual Info: NPN SILICON TRANSISTOR NE856M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance • LOW NOISE FIGURE:

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters