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NE35 Datasheets (60)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE350184C	California Eastern Laboratories	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF	194.32KB	8
NE350184C-T1	California Eastern Laboratories	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF	194.31KB	8
NE350184C-T1A	California Eastern Laboratories	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF	194.32KB	8
NE3503M04	California Eastern Laboratories	SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET	Original	PDF	355.92KB	7
NE3503M04	NEC	C To Ku Band Super Low Noise and High-Gain Amplifier N-Channel HJ-FET	Original	PDF	67.34KB	9
NE3503M04-A	California Eastern Laboratories	RF FETs, Discrete Semiconductor Products, AMP HJ-FET 12GHZ M04	Original	PDF		8
NE3503M04-A	California Eastern Laboratories	NECs C TO Ku BAND SUPER LOW NOISE and HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET	Original	PDF	355.93KB	7
NE3503M04-T2	NEC		Original	PDF	67.35KB	9
NE3503M04-T2-A	California Eastern Laboratories	RF FETs, Discrete Semiconductor Products, AMP HJ-FET 12GHZ M04	Original	PDF		8
NE3503M04-T2-A	California Eastern Laboratories	NECs C TO Ku BAND SUPER LOW NOISE and HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET	Original	PDF	355.93KB	7
NE3503M04-T2B-A	CEL	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 4V 12GHZ M04	Original	PDF	436.71KB
NE3508M04	California Eastern Laboratories	HETERO JUNCTION FIELD EFFECT TRANSISITOR	Original	PDF	1.3MB	11
NE3508M04-A	California Eastern Laboratories	RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ 4-TSMM	Original	PDF		9
NE3508M04-A	California Eastern Laboratories	HETERO JUNCTION FIELD EFFECT TRANSISITOR	Original	PDF	1.3MB	11

NE3508M04-EVNF23-A	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL DEV RF NE3508M04	Original	PDF		9
NE3508M04-T2	California Eastern Laboratories	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF	1.36MB	11
NE3508M04-T2-A	California Eastern Laboratories	RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ 4-TSMM	Original	PDF		9
NE3508M04-T2-A	California Eastern Laboratories	HETERO JUNCTION FIELD EFFECT TRANSISITOR	Original	PDF	1.3MB	11
NE3509M04	California Eastern Laboratories	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF	1.25MB	11
NE3509M04	California Eastern Laboratories	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF	204.07KB	9

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Nexperia GANE350-650FBAZ GANE350-650FBA/SOT8075/DFN5060
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DigiKey ()	GANE350-650FBAZ	Cut Tape	2,237		1	1 $1.55 10 $1.13 100 $0.91 1000 $0.80 10000 $0.80	Buy Now
	GANE350-650FBAZ	Digi-Reel	2,237		1	1 $1.55 10 $1.13 100 $0.91 1000 $0.80 10000 $0.80	Buy Now
Mouser Electronics	GANE350-650FBAZ		1,810			1 $1.55 10 $1.03 100 $0.91 1000 $0.80 10000 $0.69	Buy Now
Amphenol Aerospace D38999-23NE35PN HERMETIC CIRCULAR MIL-SPEC CONNE
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DigiKey	D38999-23NE35PN	Bag	55		1	1 $241.26 10 $218.74 100 $218.74 1000 $218.74 10000 $218.74	Buy Now
Amphenol Aerospace D38999-27NE35PN HERMETIC CIRCULAR MIL-SPEC CONNE
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DigiKey	D38999-27NE35PN	Bag	27		1	1 $125.71 10 $107.22 100 $107.22 1000 $107.22 10000 $107.22	Buy Now
Nexperia GANE350-700BBAZ GANE350-700BBA/SOT428/DPAK
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DigiKey ()	GANE350-700BBAZ	Digi-Reel	27		1	1 $2.43 10 $1.56 100 $1.07 1000 $0.84 10000 $0.84	Buy Now
	GANE350-700BBAZ	Cut Tape	27		1	1 $2.43 10 $1.56 100 $1.07 1000 $0.84 10000 $0.84	Buy Now
Mouser Electronics	GANE350-700BBAZ		1,900			1 $2.43 10 $1.57 100 $1.29 1000 $1.01 10000 $0.69	Buy Now
Amphenol Aerospace D38999-25NE35PN HERMETIC CIRCULAR MIL-SPEC CONNE
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DigiKey	D38999-25NE35PN	Bag	24		1	1 $213.02 10 $190.90 100 $190.90 1000 $190.90 10000 $190.90	Buy Now

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NE35 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NE3505M04 Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505 Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only	Original	NE3505M04 NE3505M04-T2 50pcs Rn/50 NE3505M04 FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505	PDF
NE3508M04 Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67 Contextual Info: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )	Original	NE3508M04 NE3508M04-A 50pcs NE3508M04-T2 NE3508M04-T2-A NE3508M04 Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67	PDF
ne3514s02 Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS	Original	NE3514S02 NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A NE3514S0anty ne3514s02 NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier	PDF
NE3517S03 Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS	Original	NE3517S03 NE3517S03-T1C NE3517S03-T1C-A NE3517S03-T1D NE3517S03-T1D-A NE3517S03 rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid	PDF
NE3515S02 Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260 Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA	Original	NE3515S02 NE3515S02-T1C NE3515S02-T1D NE3515S02-T1C-A NE3515S02-T1D-A PG10708EJ01V0DS NE3515S02 transistor "micro-x" "marking" 3 ne3515 duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260	PDF
transistor marking v75 ghz Abstract: NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503 Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz	Original	NE3503M04 NE3503M04-T2 transistor marking v75 ghz NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503	PDF
NE350184C Abstract: NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS	Original	NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350anty NE350184C NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier	PDF
V75 marking Abstract: NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin Contextual Info: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD	Original	NE3503M04 NE3503M04-A NE3503M04-T2-A V75 marking NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin	PDF
transistor marking v80 ghz Abstract: HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package	Original	NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A transistor marking v80 ghz HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna	PDF
NE3508M04-T2-A Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508 Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package	Original	NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508	PDF
NE3510M04-A Abstract: ne3510 NE3510M04 GA-14 HS350 NE3510M04-T2 NE3510M04-T2-A PG10676EJ01V0DS sdars lna Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only	Original	NE3510M04 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A NE3510M04-A ne3510 NE3510M04 GA-14 HS350 NE3510M04-T2 NE3510M04-T2-A PG10676EJ01V0DS sdars lna	PDF
ne3511s02 s2p Abstract: NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880 Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package	Original	NE3511S02 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A ne3511s02 s2p NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880	PDF
NEC Ga FET marking L Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2 Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package	Original	NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2B NE3508M04-T2B-A NEC Ga FET marking L NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2	PDF
nec v80 Abstract: NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package	Original	NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B NE3509M04-T2B-A nec v80 NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A	PDF

NE3521M04 Abstract: marking V86 Contextual Info: Data Sheet NE3521M04 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 FEATURES • Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz Reference Value	Original	NE3521M04 R09DS0058EJ0100 NE3521M04-T2 NE3521M04-T2-A NE3521M04 marking V86	PDF
RT DUROID 5880 Abstract: NE3512 NE3512S02-T1D-A PG10592EJ01V0DS HS350 Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS	Original	NE3512S02 NE3512S02-T1C NE3512S02-T1D NE3512S02-T1C-A NE3512S02-T1D-A NE3512S02-A PG10592EJ01V0DS RT DUROID 5880 NE3512 PG10592EJ01V0DS HS350	PDF
Contextual Info: 12 - 13 Witney Way Boldon Business Park, Boldon, Tyne and Wear NE35 9PE England mailto:isocom@dial.pipex.com - Tel: +44 0191 519 1900 - Fax: (+44) 0191 519 3010 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Locate in Shortform	Original	PTD615-1, PTD615-2, PTD615-3 PTD615-1: PDT615-2: PTD615-3: PTD615 PTD615-1 PTD615-2	PDF
V75 marking Contextual Info: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD	Original	NE3503M04 NE3503M04-A NE3503M04-T2-A IR260 HS350 V75 marking	PDF
NEC Ga FET marking L Abstract: a 933 transisitor NT 407 F 0429 01 2701 00 NE3509M04 NE3509 cel 502 Power Transisitor 100V 2A NE3509M04-A NE3509M04-T2 Contextual Info: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )	Original	NE3509M04 NE3509M04-A 50pcs NE3509M04-T2 NE3509M04-T2-A NEC Ga FET marking L a 933 transisitor NT 407 F 0429 01 2701 00 NE3509M04 NE3509 cel 502 Power Transisitor 100V 2A NE3509M04-A NE3509M04-T2	PDF
nec v80 Abstract: transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package	Original	NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A nec v80 transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna	PDF
NE3520S03 Abstract: nE352 Contextual Info: Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic S03 package	Original	NE3520S03 R09DS0029EJ0100 NE3520S03-T1C NE3520S03-T1C-A NE3520S03-T1D NE3520S03-T1D-A NE3520S03 nE352	PDF
RF S-parameters Contextual Info: NE3516S02 Data Sheet N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Rev.1.00 Apr 16, 2012 FEATURES • Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA	Original	NE3516S02 R09DS0038EJ0100 NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D NE3516S02-To NE3516S02 RF S-parameters	PDF
NE350184C Abstract: NE350184C-T1A ne350184c-t1-a ne350184c-t1a-a NEC Ga FET marking L HS350 NE350184C-T1 k-band amplifier Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS	Original	NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350184C NE350184C-T1A ne350184c-t1-a ne350184c-t1a-a NEC Ga FET marking L HS350 NE350184C-T1 k-band amplifier	PDF
transistor marking v75 ghz Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350 Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz	Original	NE3503M04 NE3503M04 NE3503M04-T2 NE3503M04-T2B NE3503M04-A NE3503M04-T2-A NE3503M04-T2B-A PG10456EJ03V0DS transistor marking v75 ghz LNB ku band HS350	PDF

NE35 Search Results

NE35 Datasheets (60)

NE35 Price and Stock

Nexperia GANE350-650FBAZ

Amphenol Aerospace D38999-23NE35PN

Amphenol Aerospace D38999-27NE35PN

Nexperia GANE350-700BBAZ

Amphenol Aerospace D38999-25NE35PN

NE35 Datasheets Context Search

NE3505M04

NE3508M04

ne3514s02

NE3517S03

NE3515S02

transistor marking v75 ghz

NE350184C

V75 marking

transistor marking v80 ghz

NE3508M04-T2-A

NE3510M04-A

ne3511s02 s2p

NEC Ga FET marking L

nec v80

NE3521M04

RT DUROID 5880

V75 marking

NEC Ga FET marking L

nec v80

NE3520S03

RF S-parameters

NE350184C

transistor marking v75 ghz