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    NE3503 Search Results

    NE3503 Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NE3503M04
    		California Eastern Laboratories SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET Original PDF 355.92KB 7
    NE3503M04
    		NEC C To Ku Band Super Low Noise and High-Gain Amplifier N-Channel HJ-FET Original PDF 67.34KB 9
    NE3503M04-A
    		California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 12GHZ M04 Original PDF 8
    NE3503M04-A
    		California Eastern Laboratories NECs C TO Ku BAND SUPER LOW NOISE and HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET Original PDF 355.93KB 7
    NE3503M04-T2
    		NEC Original PDF 67.35KB 9
    NE3503M04-T2-A
    		California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 12GHZ M04 Original PDF 8
    NE3503M04-T2-A
    		California Eastern Laboratories NECs C TO Ku BAND SUPER LOW NOISE and HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET Original PDF 355.93KB 7
    NE3503M04-T2B-A
    		CEL Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 4V 12GHZ M04 Original PDF 436.71KB
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    NE3503 Price and Stock

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    Renesas Electronics Corporation NE3503M04-T2B-A

    HIGH-GAIN AMPLIFIER N-CHANNEL RF FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () NE3503M04-T2B-A 105,000 312
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    NE3503M04-T2B-A 45,000 312
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    NE3503M04-T2B-A 13,494 312
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    Rochester Electronics NE3503M04-T2B-A 163,494 1
    • 1 -
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    • 100 $0.96
    • 1000 $0.80
    • 10000 $0.71
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    Renesas Electronics Corporation NE3503M04-T2-A

    Trans FET N-CH 4V 70mA HFET 4-Pin Thin-Type Super Mini-Mold T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () NE3503M04-T2-A 9,000 312
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    NE3503M04-T2-A 8,304 312
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    NE3503M04-T2-A 5,480 312
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    NE3503M04-T2-A 3,000 312
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    NE3503M04-T2-A 3,000 312
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    Rochester Electronics NE3503M04-T2-A 28,784 1
    • 1 -
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    • 100 $0.96
    • 1000 $0.80
    • 10000 $0.71
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    NEC Electronics Group NE3503M04T2A

    C TO KU BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA NE3503M04T2A 3,000
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    NE3503 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor marking v75 ghz

    Abstract: NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-t2transistor marking v75 ghzpg10456ej01v1ds+5hs350nec marking power amplifiernec microwavem04 markingne3503 PDF

    V75 marking

    Abstract: NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin
    Contextual Info: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD


    Original     		ne3503m04ne3503m04-ane3503m04-t2-av75 marking+5transistor marking v75 ghzlnb ku bandhs350m04 markingv75 4pin PDF

    V75 marking

    Contextual Info: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD


    Original     		ne3503m04ne3503m04-ane3503m04-t2-air260+2hs350v75 marking PDF

    transistor marking v75 ghz

    Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350
    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-t2ne3503m04-t2bne3503m04-a+6ne3503m04-t2-ane3503m04-t2b-apg10456ej03v0dstransistor marking v75 ghzlnb ku bandhs350 PDF

    microwave office

    Abstract: transistor marking v75 ghz nec microwave
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-t2ne3503m04-ane3503m04-t2-a+4ne3503m04-t2b-amicrowave officetransistor marking v75 ghznec microwave PDF

    transistor marking v75 ghz

    Abstract: transistor v75
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-t2transistor marking v75 ghztransistor v75 PDF

    transistor marking v75 ghz

    Abstract: nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking
    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-ane3503m04-t2ne3503m04-t2-a+8ne3503m04-t2bne3503m04-t2b-atransistor marking v75 ghznec microwavetransistor v75hs350lnb ku bandv75 marking PDF

    transistor marking v75 ghz

    Abstract: nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-ane3503m04-t2ne3503m04-t2-a+7ne3503m04-t2bne3503m04-t2b-atransistor marking v75 ghznec microwaveku band super low noise type chs350v75 4pin PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		g0706px10020ej41v0pfmobile phone basic block diagrampg2158t5k+82sc3357/ne85634microwave duplexerne5510279aupc8236ne3517s03upg2156ne662m04sw spdt PDF

    m04 SMD

    Abstract: nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
    Contextual Info: www.cel.com NEC Small Signal GaAs FETS Low Noise Devices Typical Specifications @ TA = 25°C Recommended Gate Gate Test NF/GA Bias Frequency Part Length Width Range Frequency VDS IDS NFOPT GA Number µm (µm) (GHz) (GHz) (V) (mA) (dB) (dB) Power Bias Chip /


    Original     		ne27200ne321000ne3210s01ne4210s01+8ne3503m04ne3508m04m04 smdnec smd codene3514ne3512s02ghz micro-x packagene3509m04 PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic PDF

    NE5510279A

    Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
    Contextual Info: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is


    Original     		ne5510279aupb1512tune350184cdvbt diagram+6ne3503m045.8 ghz transceiver icne552gp bjtinmarsat demodulatorne3210s01 PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		g0706px10727ej02v0pfnec mosfet marked v75nec ga fet marking code t79+8fet marking code g5dmarking code c1g mmiclga 1155 pin diagrampb1507marking code c1e mmicmarking code c1h mmicpc8230tummic sot 363 marking code 77 PDF

    NE3503M04

    Abstract: s parameter of transistor ne3503m04 transistor marking v75 ghz NE3503M04-A HS350 NE3503M04-T2 NE3503M04-T2-A
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		ne3503m04s parameter of transistor ne3503m04transistor marking v75 ghzne3503m04-a+3hs350ne3503m04-t2ne3503m04-t2-a PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		2013/4msmd m05 sot23ne5531ne352+4a3 smd sot-343transistor smd m05smd transistor m05transistor smd code 404 PDF

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		07/2m847indiana/kentuckyne3511s02 s2pne3512s02 s2p+8smd m05 sotsmd transistor m05s06 smdupg2162t5nne3210s01ne321000qfn2020upg2250t5n PDF

    NE3503M04

    Abstract: transistor v75 NE3503M04-T2 NE3503M04-T2-A HS350 NE3503M04-A NE3503M04-T2B-A
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		ne3503m04ne3503m04-ane3503m04-t2ne3503m04-t2-a+5pg10456jj03v0dsm04mmtransistor v75hs350ne3503m04-t2b-a PDF

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Contextual Info: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original     		pa86xpg2158t5kpc3218t5ynes1823m-45+16nes1823m-180nes1823m-240nes1823s-45nes1823s-90r09ca0001jj0100px10020jj42v0pfic isl 8872sc5508ne3514sw spdtne3515s02ne5510279anesg2031m05pg2179ne3509m04ne3517s03 PDF

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		10/2msmd transistor m05smd transistor code m05wy smd transistor+7upd5740ne66200transistor m05 smdupd5740t6nupg2159t6rsmd transistor m05 driver50 volts 5 amp smd sot-89 transistor PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		ir260/ws260/hs350ir260/hs350mc10087f1mc-10041+8mc-10043mc-10087f1-xxxmc-10044mc-10051bf12sc56642sc5292upc1701cmc-10059 PDF

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		g0706px10020ej39v0pfupc82362sc5508+8ne3512s02digital tv tunerhjfetnesg240033sw spdtne5510279aantenna for microwave catv materialsantenna parabolic PDF

    JFVNY-HC-49XA-C08TTA-25

    Abstract: NE3503 11/sharp Universal lnb lnb schematic
    Contextual Info: AN11144 Universal Single LNB with TFF101x FIMOD IC Rev 1.0 — 16 January 2012 Application note Document information Info Content Keywords DNC, TFF101x, Ku Band, LNB Abstract The document provides circuit, layout, BOM and performance information for Ku Band Universal Single LNB equipped with NXP’s TFF101x


    Original     		an11144tff101xjfvny-hc-49xa-c08tta-25ne3503+211/sharp universal lnblnb schematic PDF

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		08/2msmd m05 sotnesg303100gsmd transistor m05+7transistor nec d 882 pm33 tf 130h02 sot-363smd m05 sot23upc8236t6n 700ne68000 s-parameters PDF

    UPC8236

    Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
    Contextual Info: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original     		r09ca0001ej0100px10020ej42v0pfupc82362sc5508+82sc3357/ne85634catv modulatorne5510279aupg2406t6rmicrowave gaas fet cataloguene3515s02ne662m04ne3514s02 PDF