NE950R575 Search Results

Contextual Info: PRELIMINARY DATA SHEET 0.5W X, Ku-BAND POWER GaAs FET FEATURES_ OUTLINE DIMENSIONS NE960R575 Units in mm • C LASS A O PERATION PACKAGE OUTLINE 75 • HIGH O U T P U T POW ER • HIGH RELIA B ILITY DESCRIPTION_ The NE950R575 Power GaAs FET covers the 4 GHz to 18

Contextual Info: PRELIMINARY DATASHEET 0.5W X, Ku-BAND POWER GaAs FET FEATURES_ OUTLINE DIMENSIONS NE960R575 Units in mm • CLASSA OPERATION PACKAGE OUTLINE 75 • HIGH OUTPUT POWER • HIGH RELIABILITY DESCRIPTION_ The NE950R575 Power GaAs FET covers the 4 GHz to 18

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

ne6500278

Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50
Contextual Info: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

NE960R575

Abstract: 0512f NE950R575
Contextual Info: 0.5W X, Ku-BAND POWER GaAs FET FEATURES NE960R575 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 27.5 dBm TYP @ P1 dB PACKAGE OUTLINE 75 • HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz • HIGH EFFICIENCY: 30% TYP @ 14.5 GHz +0.15 -0.05 2 PLACES φ 1.8

NE950R575

Contextual Info: 0.5W X, Ku-BAND POWER GaAs FET FEATURES NE960R575 OUTLINE DIMENSIONS Units in mm • CLASS A OPERATION PACKAGE OUTLINE 75 • HIGH OUTPUT POWER • HIGH RELIABILITY +0.15 -0.05 2 PLACES φ 1.8 GATE 0.5 ± 0.1 SOURCE 2.7 2.3 3.0 MIN BOTH LEADS DRAIN 2.7 TYP

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997