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    NE650103M Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NE650103M
    		California Eastern Laboratories 10 W L & S-BAND POWER GaAs MESFET Original PDF 189.52KB 7
    NE650103M
    		California Eastern Laboratories NECS 10 W L & S-BAND POWER GaAs MESFET Original PDF 135.95KB 6
    NE650103M
    		NEC 10 W L, S-BAND POWER GaAs MES FET Original PDF 36.88KB 7
    NE650103M-A
    		California Eastern Laboratories 10 W L & S-BAND POWER GaAs MESFET Original PDF 189.52KB 7
    NE650103M-AZ
    		NEC IC FET MISC 3(3M) Original PDF 189.54KB 7

    NE650103M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE6510179A

    Abstract: NE650103M NE651R479A
    Contextual Info: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain GHz (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 — NE6510179A 0.8 to 3.7 — NE650103M 0.8 to 2.7


    Original     		ne651r479ane6510179ane650103m PDF

    NE650103M

    Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650103M 10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power CW with high linear gain, high efficiency and


    Original     		ne650103mt-91m PDF

    NE650103M

    Abstract: NE650103M-A
    Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE650103M 10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power CW with high linear gain, high efficiency and


    Original     		ne650103mne650103m-at-91m PDF

    NE650103M

    Abstract: NE650103M-A 68207 j349
    Contextual Info: NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC PACKAGE PACKAGE OUTLINE 3M • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA 20.32 ± 0.15 • HIGH OUTPUT POWER: 40 dBm TYP 14.27 ± 0.15


    Original     		ne650103mne650103m-a68207j349 PDF

    transistor NEC D 587

    Abstract: 17-33 0952 567 tone NE650103M 68207
    Contextual Info: NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC PACKAGE PACKAGE OUTLINE 3M • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA 20.32 ± 0.15 • HIGH OUTPUT POWER: 40 dBm TYP 14.27 ± 0.15


    Original     		ne650103mtransistor nec d 58717-33 0952567 tone+168207 PDF

    NE650103M

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		ne650103m PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		g0706px10727ej02v0pfnec mosfet marked v75nec ga fet marking code t79+8fet marking code g5dmarking code c1g mmiclga 1155 pin diagrampb1507marking code c1e mmicmarking code c1h mmicpc8230tummic sot 363 marking code 77 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861 PDF

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		07/2m847indiana/kentuckyne3511s02 s2pne3512s02 s2p+8smd m05 sotsmd transistor m05s06 smdupg2162t5nne3210s01ne321000qfn2020upg2250t5n PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		p14740ee5v0pf00marking code c1e smd transistortransistor smd marking code s01fmcw radar+7transistor smd c1yne92039g2b 6-pin smdne582m03ne3210so1smd transistor g1-lsmd code marking nec 817 PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		ir260/ws260/hs350ir260/hs350mc10087f1mc-10041+8mc-10043mc-10087f1-xxxmc-10044mc-10051bf12sc56642sc5292upc1701cmc-10059 PDF

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		08/2msmd m05 sotnesg303100gsmd transistor m05+7transistor nec d 882 pm33 tf 130h02 sot-363smd m05 sot23upc8236t6n 700ne68000 s-parameters PDF

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		2sa19772sa19782sc23512sc3355+162sc33572sc35452sc35832sc35852sc40932sc4094mrf947t1 equivalentmrf947t1 equivalent transistornj1006bfp320fll120mkfll101memgf4919gfujitsu gaas fet fhx76lphpma-2086mmbr521l PDF