NDC70 Search Results

Contextual Info: NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to

Contextual Info: NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state

Contextual Info: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

NDC7002N

Abstract: 051A
Contextual Info: N March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has

SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N NDC7003P
Contextual Info: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

NDC7003P

Abstract: 034A
Contextual Info: National Semiconductor" M arch 1 9 9 6 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features 0.51A, 50V, RDS ON = 2Ω @ VGS=10V These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

Contextual Info: [N March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These d ual P-C hannel e n h a n ce m e n t m od e pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS technology.

Contextual Info: [N M a rc h 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-ehannel en h a n ce m e n t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS

NDC7002N

Abstract: CBVK741B019 F63TNR FDC633N
Contextual Info: March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features 0.51A, 50V, RDS ON = 2Ω @ VGS=10V These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

NDC7003P

Contextual Info: N March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been designed

PL504

Abstract: PQ508 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518
Contextual Info: PQ508 SI4435DY PD509 A PL1 A 1 2 6 VADJ_1 5 PQ1B NDC7002N 1 2 VADJ_2 5 PR9 1M 0603 1% 1 2 1 PQ1A NDC7002N 2 2 1 PR6 1M 0603 1% 1 PR7 1M 0603 1% 2 1M 0603 1% 1 PR3 34K 0603 1% PR507 34K 0603 1% 2 PR2 2 PR4 10K 0603B 1% 1 1 1 PC6 1000P 0603B 10%,X7R 2 PR508

Contextual Info: March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDC7001C

Abstract: VX25
Contextual Info: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS

NDC7003P

Contextual Info: N March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process

CBVK741B019

Abstract: F63TNR FDC633N NDC7001C
Contextual Info: March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

dc7002n

Contextual Info: SEM IC ONDUCTO R tm NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

marking NDC7003P

Abstract: marking 34A NDC7003P
Contextual Info: NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state

NDC7001C

Abstract: siemens
Contextual Info: N March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has

ndc7002n

Contextual Info: National March 1996 Semiconductor” & NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

SOT-6 1C

Contextual Info: PAIRCHII-D M a rc h 1 9 9 6 MICDNDUCTQ R tm NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

NDC7001C

Contextual Info: NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to

NDC7002N

Contextual Info: March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features 0.51A, 50V, RDS ON = 2Ω @ VGS=10V These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

NDC7002N

Abstract: Supersot6 SOT-6 1C
Contextual Info: fN M a rc h 1 9 9 6 NDC7002N Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features These dual N -C hannel en h a n ce m e n t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS