C7001C Search Results

NDC7001C

Contextual Info: ÎN M arch 1 9 9 6 N D C7001C Dual N & P-Channel Enhancement M ode Field Effect Transistor General Description Features T hese dual N and P-ehannel en hancem en t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS

6A4 mic DIODE

Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE

Contextual Info: [N M a rc h 1 9 9 6 C7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-ehannel en h a n ce m e n t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS