ND487R1-3R
Abstract: nd487 nd487r1 uhf modulator d487
Contextual Info: NEC U H F M O D U LA T O R D IO D E QUAD ELECTRON DEVICE D E S C R IP T IO N ND487R1-3R T h e N D 487R1 3R «1 sch o ttky b tm e r diode quad inter connected in ring config uratio n, especially designed tor use m double balanced m ixers, phase detectors. AM m od
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nd487r1-3rnd487r1te-25ta-25+3nd487uhf modulatord487
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ND487R1-3R
Abstract: DOUBLE BALANCED MODULATOR DIODE AM MODULATOR pj 50 diode pj diode nd487r13r
Contextual Info: _ PRELIMINARY SPECIFICATION NEC UHF M O DULATOR DIODE Q U A D ELECTRON DEVICE N D 4 8 7 R 1 -3 R UHF DOUBLE BALANCED MODULATOR SILICON EPITAXIAL SCHOTTKY BARRIER DIODE QUAD The ND487R1-3R is schottky barrier diode quad interconnected in ring con
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nd487r1-3rdouble balanced modulatordiode am modulatorpj 50 diode+2pj diodend487r13r
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ND487C2-3R
Abstract: ND487C1-3R ND487R1-3R MA746 MA763 MA775 MA776 MA777 MA778 MA780
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+9ma776lf-30ma20minnd487c2-3rnd487c1-3rnd487r1-3rma777ma778ma780
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ND487C1-3R
Abstract: ND487C2-3R ND487R1-3P ND487R1-3R ND487C2-3P MA746 MA763 MA775 MA776 MA777
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c1-3rnd487c2-3rnd487r1-3pnd487r1-3rnd487c2-3pma777
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ND487C1-3R
Abstract: ND487C2-3R pj 85 lv ND411G-2 ND487R1-3R MA776 MA746 MA763 MA775 MA777
Contextual Info: - 170 - -fr S B £ £ M A 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 tôT tëT tëT fôT IßT B H s m H3I ND4131-3D ND4141-3A N D 4 1 4 1 —3 D ND4151-3A ND4151-3D 30 « T MA795 M A 7 9 5 R rK ND411G-1 ND411G-1R
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ma746ma74sma763ma775+11ma776lf-30mand4151-3a21ghznd4151-3dnd487c1-3rnd487c2-3rpj 85 lvnd411g-2nd487r1-3rma777
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ND487C2-3R
Abstract: ND487C1-3R ND487R1-3P ND487R1-3R ND411G-2 MA777 ND411G-1 MA763 MA775 MA776
Contextual Info: - 170- -fr S S «a au B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P
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ma746ma74sma763ma775+13ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c2-3rnd487c1-3rnd487r1-3pnd487r1-3rnd411g-2ma777nd411g-1
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11mil-hdbk-217fit2sk2500upc1037haupc648c2sk927nec 2sk2500upd5201gupa64haupd6360c2sh24n13t1
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ND487C1-3R
Abstract: nd487c13r ND487C2-3R MA776 ND487R1-3R MA746 MA763 MA775 MA777 MA778
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+11ma776lf-30ma26min26m1n28minnd487c1-3rnd487c13rnd487c2-3rnd487r1-3rma777ma778
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ND487C1-3R
Abstract: ND487C2-3R ND487R1-3R MA782 MA746 MA763 MA775 MA776 MA777 MA778
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c1-3rnd487c2-3rnd487r1-3rma782ma777ma778
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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mil-hdbk-217c11178ejcv0iftransistor nec 2sk2500nec 2sk2500+82sk2500n13t12sk2500 equivalentupc1037haupc648c2sh252sk2500 transistor2sh24
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157
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ND487C1-3R
Abstract: ND487R1-3R ND487C2-3R ND487C2-3P ND411G-2 ND487RI-3P MA746 MA763 MA775 MA776
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c1-3rnd487r1-3rnd487c2-3rnd487c2-3pnd411g-2nd487ri-3p
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ND487C1-3R
Abstract: ND487C2-3R ND487R1-3R ND411G-2 MA746 MA763 MA775 MA776 MA777 MA778
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c1-3rnd487c2-3rnd487r1-3rnd411g-2ma777ma778
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impatt diode
Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Contextual Info: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz
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b427414nd487c1-3rnd487c2-00nd487c2-3p+13nd487c2-3rnd487r1-00nd487r1-3pnd487r1-3rnd487r2-00nd487r2-3pimpatt diode1st23nd487nd8l60w1timpatt1st11nd8m30-1n
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ND487C1-3R
Abstract: ND487C2-3R MA776 ND487R1-3R MA746 MA763 MA775 MA777 MA778 MA780
Contextual Info: - 170- -fr S B £ £ M A 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 tôT tëT tëT SO 30 30 50 30 30 « T fôT IßT tôT fôT MA795 M A 7 9 5 R rK ND411G-1 ND411G-1R ND4UG-2 B H s m H3I ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mama128nd4151-3d21ghz12maxnd487c1-3rnd487c2-3rnd487r1-3rma777ma778ma780
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