ND487C2-3R
Abstract: ND487 uhf modulator quad schottky diode array nd487c2 IF-50 nd487c23r
Contextual Info: NEC U H F M O D U L A T O R D IO D E Q UAD ELECTRON DEVICE D E S C R IP T IO N ND487C2-3R T h e N D 4 8 7 C 2 - 3 R is sch o ttk y barrier d io de quad inter P A C K A G E D I M E N S IO N S connected in c ro w configuration, especially designed for u s * in d o u b le balanced m ixers, phase detoctors, A M m o d
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nd487c2-3rta-25if-50nd487+4uhf modulatorquad schottky diode arraynd487c2nd487c23r
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nd487c2-3r
Abstract: DIODE AM MODULATOR uhf modulator DOUBLE BALANCED MODULATOR ND487c2 UHF schottky diode
Contextual Info: PRELIMINARY SPECIFICATION NEC UHF MODULATOR DIODE QUAD ELfCTRON DEVICE ND487C2-3R UHF DOUBLE BALANCED MODULATOR SILICON EPITAXIAL SCHOTTKY BARRIER DIODE QUAD The ND487C2-3R is schottky barrier diode quad interconnected in cross con figuration, especially designed fo r use in double balanced mixers, phase detec
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nd487c2-3rdiode am modulatoruhf modulatordouble balanced modulator+2nd487c2uhf schottky diode
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ND487C2-3R
Abstract: ND487C1-3R ND487R1-3R MA746 MA763 MA775 MA776 MA777 MA778 MA780
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+9ma776lf-30ma20minnd487c2-3rnd487c1-3rnd487r1-3rma777ma778ma780
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ND487C1-3R
Abstract: ND487C2-3R ND487R1-3P ND487R1-3R ND487C2-3P MA746 MA763 MA775 MA776 MA777
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c1-3rnd487c2-3rnd487r1-3pnd487r1-3rnd487c2-3pma777
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ND487C1-3R
Abstract: ND487C2-3R pj 85 lv ND411G-2 ND487R1-3R MA776 MA746 MA763 MA775 MA777
Contextual Info: - 170 - -fr S B £ £ M A 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 tôT tëT tëT fôT IßT B H s m H3I ND4131-3D ND4141-3A N D 4 1 4 1 —3 D ND4151-3A ND4151-3D 30 « T MA795 M A 7 9 5 R rK ND411G-1 ND411G-1R
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ma746ma74sma763ma775+11ma776lf-30mand4151-3a21ghznd4151-3dnd487c1-3rnd487c2-3rpj 85 lvnd411g-2nd487r1-3rma777
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ND487C2-3R
Abstract: ND487C1-3R ND487R1-3P ND487R1-3R ND411G-2 MA777 ND411G-1 MA763 MA775 MA776
Contextual Info: - 170- -fr S S «a au B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P
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ma746ma74sma763ma775+13ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c2-3rnd487c1-3rnd487r1-3pnd487r1-3rnd411g-2ma777nd411g-1
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ND487C1-3R
Abstract: nd487c13r ND487C2-3R MA776 ND487R1-3R MA746 MA763 MA775 MA777 MA778
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+11ma776lf-30ma26min26m1n28minnd487c1-3rnd487c13rnd487c2-3rnd487r1-3rma777ma778
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ND487C1-3R
Abstract: ND487C2-3R ND487R1-3R MA782 MA746 MA763 MA775 MA776 MA777 MA778
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c1-3rnd487c2-3rnd487r1-3rma782ma777ma778
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157
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ND487C1-3R
Abstract: ND487R1-3R ND487C2-3R ND487C2-3P ND411G-2 ND487RI-3P MA746 MA763 MA775 MA776
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c1-3rnd487r1-3rnd487c2-3rnd487c2-3pnd411g-2nd487ri-3p
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ND487C1-3R
Abstract: ND487C2-3R ND487R1-3R ND411G-2 MA746 MA763 MA775 MA776 MA777 MA778
Contextual Info: - 170 - -fr S B £ £ MA 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 MA786 MA787 MA788 MA790 MA? 9 5 MA795 MA795RrK ND411G-1 ND411G-1R ND4UG-2 ND412G-1 ND412G-2 ND413G-2 ND414G-2 ND433G ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mand487r2-3rnd4131-3a9375mhznd4131-3dnd487c1-3rnd487c2-3rnd487r1-3rnd411g-2ma777ma778
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impatt diode
Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Contextual Info: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz
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b427414nd487c1-3rnd487c2-00nd487c2-3p+13nd487c2-3rnd487r1-00nd487r1-3pnd487r1-3rnd487r2-00nd487r2-3pimpatt diode1st23nd487nd8l60w1timpatt1st11nd8m30-1n
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FC54M
Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
Contextual Info: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460
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do-411ss2671s15551s1588+161ss1041s15531s15541s20921s24601s2461fc54mfc53mdiode cross reference 1s1555diode cross reference 1s2473rls135 "cross reference1ss15861ss211sanken se0141ss2021toshiba diode "do-41
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diode cross reference 1s1555
Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Contextual Info: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,
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do-351s15551s15881ss104+161s15531s15541s953ma1611s15861s1587diode cross reference 1s1555diode cross reference 1s2473ips3021ss2111s2473 diode equivalent1s2473 diodetoshiba diode do-411s1555 diode1ss2021ss153
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ND487C2-3R
Abstract: ND487C1-3R ND487C2-3P ND487R1-3P ND487C1-3P ND487c2
Contextual Info: SILICON SCHOTTKY BARRIER DIODES ABSO LUTE MAXIMUM RATINGS ELECT R ICAL CHARACTERISTICS SERIES PART N UM BER QUANTITYCONFIGURATION PACKAG E CO D E If Pt mW (mA) If (mA) PEAK T sto (C) @lF Vf (mA) (mV) M AX DELTA DELTA Vf Ct Ct (mV) (Pf) (Pt) MAX MAX MAX ND411
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nd487c2-3rnd487c1-3rnd487c2-3pnd487r1-3p+2nd487c1-3pnd487c2
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ND487C1-3R
Abstract: ND487C2-3R MA776 ND487R1-3R MA746 MA763 MA775 MA777 MA778 MA780
Contextual Info: - 170- -fr S B £ £ M A 746 MAT46 MA 7 6 3 MA774 MA775 MA776 MA777 MA778 MA780 MA781 MA781WX MA782 MA783 MA784 MA785 tôT tëT tëT SO 30 30 50 30 30 « T fôT IßT tôT fôT MA795 M A 7 9 5 R rK ND411G-1 ND411G-1R ND4UG-2 B H s m H3I ND434G ND487C1-3P ND487C1-3R
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ma746ma74sma763ma775+12ma776lf-30mama128nd4151-3d21ghz12maxnd487c1-3rnd487c2-3rnd487r1-3rma777ma778ma780
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