NAND TTL Search Results

TTL 7440

Abstract: 9N38 74H40 74S140 74S40 9H40 9N37 9N40 9S40 TTL 7437
Contextual Info: 6006 74H40 9H 40/ 9N 37/ 7437 9N 38/ 7438 9N 40/ 7440 74S40 9S 40/ 74S140 96101 Dual 2-NAND Driver Any TTL Quad 2-NAND Driver Any TTL Any TTL Dual 2-NAND Driver Any TTL Quad 2-NAND Driver Dual 2-NAND Driver Any TTL 96 106 Any TTL Dual 2-NAND Driver 50 0 Driver

mc14569

Abstract: mc14094b MC14024B MC14555B
Contextual Info: CMOS Selection Guide by Function Device NAND Gates MC14011B MC14011UB MC14093B MC14023B Function Page Quad 2−Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Quad 2−Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

MT29C4G48MAZBBAKQ-48 IT

Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)

751A-03

Abstract: 74AC ACT132 MC74AC132 MC74ACT132 74ACT132
Contextual Info: MC74AC132 MC74ACT132 Quad 2ĆInput NAND Schmitt Trigger QUAD 2-INPUT NAND SCHMITT TRIGGER The MC74AC/74ACT132 contains four 2-input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. In addition, they have greater noise margin than conventional NAND gates.

Contextual Info: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

Contextual Info: SG508 SILICON EENERAL QUAD-NAND DRIVER LIN EAR IN TEGR ATED C IRCUITS DESCRIPTION FEATURES The SG508 is a Quad 2-Input NAND Driver with outputs capable ot sustaining 100V breakdown voltage. Each TTL-compatible NAND gate controls a 500mA output sink transistor. This combination of a TTL-compatible gate

MT29F2G08AAD

Contextual Info: Micron Confidential and Proprietary 2Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD Features Figure 1: • Open NAND Flash Interface ONFI 1.0-compliant • Single-level cell (SLC) technology

DC 5V to DC 100V CIRCUIT DIAGRAM

Abstract: smd transistor 2y lead side brazed hermetic UHD508 "Direct Replacement" 2Y SMD SG508 SG508H SMD 3B direct replacement
Contextual Info: SG508 SILICON GENERAL QUAD-NAND DRIVER LINEAR IN TEG R ATED C IRCUITS DESCRIPTION FEATURES The SG508 is a Quad 2-Input NAND Driver with outputs capable of sustaining 100V breakdown voltage. Each TTL-compatible NAND gate controls a 500mA output sink transistor. This combination of a TTL-compatible gate

Contextual Info: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

Contextual Info: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

NAND512W3A2C

Abstract: VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R3A2C NAND512R4A2C NAND512W4A2C NAND512W3A2
Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface

km29v040t

Abstract: yd 4145 km29v040 V040T
Contextual Info: KM29V040T Flash ELECTRONICS 512Kx8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array Its NAND cell structure provides the most cost-effective

Contextual Info: KM29N040T Flash ELECTRONICS 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program

Contextual Info: Advance Information KM29V64000TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND

FBGA63

Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface

Contextual Info: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array : 512K x8 Its NAND cell structure provides the most cost-effective

Contextual Info: Advance Information FLASH MEMORY KM29V64000TS/RS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND

NAND512-A2C

Abstract: NAND512A2C NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface

NAND04GW3C2A

Abstract: NAND04GA3C2A TSOP48 outline JESD97 Wear Leveling in Single Level Cell NAND Flash Memory
Contextual Info: NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features • High density multi-level Cell MLC NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND interface

Contextual Info: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program

Contextual Info: 54ACTQ10 54ACTQ10 Quiet Series Triple 3-Input NAND Gate Literature Number: SNOS582 54ACTQ10 Quiet Series Triple 3-Input NAND Gate General Description The ’ACTQ10 contains three, 3-input NAND gates and utilizes NSC Quiet Series technology to guarantee quiet output

Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface

MM74C00

Abstract: MM74C00N MM54C00 MM54C02 MM54C04 MM54C10 MM54C20 MM74C02 MM74C04 MM74C10
Contextual Info: MM54C00 MM54C02 MM54C04 MM54C10 MM54C20 MM74C00 Quad 2-Input NAND Gate MM74C02 Quad 2-Input NOR Gate MM74C04 Hex Inverter MM74C10 Triple 3-Input NAND Gate MM74C20 Dual 4-Input NAND Gate General Description Features These logic gates employ complementary MOS CMOS to

CD54HC10

Abstract: CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10E CD74HCT10 HC10 HCT10 CD74HC10
Contextual Info: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10