N72 M Search Results

Contextual Info: MECHANICAL DATA MPSI004 – DECEMBER 1997 BKS R-SIMM-N72 SINGLE IN-LINE MEMORY MODULE 0.055 (1,39) 0.045 (1,15) 4.256 (108,11) 4.244 (107,81) 0.125 (3,18) TYP 0.856 (21,74) 0.844 (21,44) 0.050 (1,27) 0.128 (3,25) 0.120 (3,05) 0.040 (1,02) TYP 0.010 (2,54) MAX

MPSI001

Contextual Info: MECHANICAL DATA MPSI001 – JANUARY 1997 BJ R-PSIM-N72 SINGLE-IN-LINE MEMORY MODULE 4.255 (108,08) 0.054 (1,37) 0.047 (1,19) 4.245 (107,82) 0.125 (3,18) TYP 0.050 (1,27) 0.040 (1,02) TYP 0.010 (0,25) MAX 0.128 (3,25) 0.120 (3,05) 0.400 (10,16) TYP 0.705 (17,91)

Contextual Info: MECHANICAL DATA MCSI004B – NOVEMBER 1997 BK R-PSIM-N72 SINGLE-IN-LINE MEMORY MODULE (SIMM) 0.054 (1,37) 0.047 (1,19) 4.255 (108,08) 4.245 (107,82) 0.125 (3,18) TYP 1.005 (25,53) 0.995 (25,27) 0.050 (1,27) 0.128 (3,25) 0.120 (3,05) 0.010 (0,25) MAX 0.400 (10,16) TYP

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

100v 23A P-Channel MOSFET

Abstract: 1E14 2E12 FRF250R4 JANSR2N7294
Contextual Info: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 23A, 200V, rDS ON = 0.115Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

FRL230

Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

B66433-G-X172

Abstract: B66433
Contextual Info: ER 28/17/11 Core B66433 ● Round center leg particularly suitable for use of thick winding wires or tapes ● For compact winding design with low leakage inductance ● ER cores are supplied as single units 16,9±0,2 12,6±0,3 28,55±0,55 = 0,88 mm–1 = 75,0 mm

P25 PNP

Abstract: SO4401 2369 BCV27 BCV47
Contextual Info: F Z J SGS-THOMSON SURFACE MOUNT DEVICES ^ 7 # RföD [^©[I[L[i gra©K!l D O S GENERAL PURPOSE & INDUSTRIAL NPN DARLINGTONS Type VCBO v CEO •c ptot hpE @ (C 1 VCE VCE (sat @ >C ' 'B fT typ Marking max BCV27 BCV47 SO 517 (V) (V) (mA) (mW) 40 80 40 30 60

Contextual Info: Philips S em iconductors bb53T31 O Q S llQ T fils M A P X 2 GHz RF power transistor ^ Prelim inary specification BFG11; BFG11/X *1^— N AMER PHILIPS/DISCRETE b'lE » PINNING DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation

TMPT6429

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25

MN101C527

Contextual Info: MNI 0 IC527 - FCR8.0MC5 Fig.a~e Udd= 5 [U] G- 0 Typical a. U1H/UIL HUl IMN 5AQ—3 V Uln : , 5Ù6 -V0- -•„4 ,UIL“Ì - 1 1 0 r - ^ Ì - ^ 4 - — U2H/U^Lj EU] • 5t8- 5t 8- 5t7U2H V . ,U2i~'^— i— i C. F Q5C [/] 1 r-Q4 1 , ~Q4 ,

75307D

Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75321P3, HUF75321S3S Semiconductor Data Sheet June 1999 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

n72 m

Abstract: 8815 k S 576 B M37540E8GP 40143
Contextual Info: M37540E8GP - 1 FCR4.0MC5 Udd= 5 CU] Fig.cTe 0- 0 Typical a, U I H / U 1 L [U] 11111 4A0—8 V Viri • U1L ~ ‘ C^— ■ r b. U 2 H / U ? L CU] _ UPH Ò-_ V in I c. F o s c .3 .1 -.1 -.3 -.5 400 89 i [/] § -4o8 0- — - V . -•n4 b b — u—

Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75343P

Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

Contextual Info: Intrinsic Safety HAZARDOUS AREA SAFE AREA 3 Introduction Intrinsically safe equipment is defined as “equipment and wiring which is incapable of releasing sufficient electrical or thermal energy under normal or abnormal conditions to cause ignition of a specific hazardous atmospheric mixture

75307D

Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.

TL 431 model SPICE

Abstract: Simulation Model tl 431
Contextual Info: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,