N50 E Search Results

24N50

Abstract: 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 21 N50 IXFH/IXFM 24 N50 IXFH 26 N50 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

13N50

Abstract: 1117 MC
Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

48N50

Abstract: 44N50 IXFK48N50 ixys ixfk 44n50
Contextual Info: HiPerFETTM Power MOSFETs IXFK 44 N50 IXFK 48 N50 VDSS ID25 RDS on 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω trr ≤ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

13N50

Abstract: .15 k 250
Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 Ω ≤ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

ixys ixth 21N50

Abstract: 21N50 24N50 ixth21n50
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

48N50

Abstract: W48A IXFN48N50 44N50
Contextual Info: HiPerFETTM Power MOSFETs IXFN 44 N50 IXFN 48 N50 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25

IXTK33N50

Contextual Info: High Current MegaMOSTMFETs IXTK 33 N50 VDSS = 500 V I D25 = 33 A RDS on = 0.17 Ω Maximum Ratings TO-264 AA N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V

IXFN61N50

Contextual Info: HiPerFETTM Power MOSFET IXFN 61 N50 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Objective Technical Specification * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: 5 0 —T S O P 2 —40 0 D F D im e n s io n s in M ilim e ters 11. 7 6 ± o .20 Ü n50 O o m ö X < s: m m n26 «25 0.205 to 050 un un r-. m o o 10.16 0.05MIN LTI CN 1.00 ±0 io 1.20 MAX 0.50 0.45-0.75 SAMSUNG ELECTRONICS CO.,LTD.

TA17465

Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
Contextual Info: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated

1xys

Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Contextual Info: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500

IXTN36N50

Contextual Info: • 4 b û b 2 2 b O G O l ûl l TTfl ■ IX Y DIXYS Pow er M O S FE T IX T N 3 6 N 4 5 IX T N 3 6 N 5 0 N-Channel Enhancement Mode D cont v¥ p dss DS(on) = 36 A = 450/500 V = 0 .1 2 & R = 0.5 Q Symbol Test Conditions Voss Tj = 25°C to 150°C Maximum Ratings

PAL 007 B

Abstract: pal 007 PAL 007 c OmniVision CMOS Camera Module OmniVision Technologies CMOS Camera Module external sync OV5116 CMOS image sensor PAL omnivision PAL 007 A AEC Crystal Resonator
Contextual Info: OV5116P OV5116P SINGLE IC CMOS MONOCHROME CAMERA WITH PAL ANALOG OUTPUT Features Single chip 1/4 inch format video image sensor „ External frame sync capability „ CCIR/PAL output „ 40mw on-chip power consumption „ Selectable mirror image „ External data acquisition support

OmniVision CMOS Camera Module

Abstract: IC AL 6001 cmos NTSC IMAGE SENSOR OmniVision Technologies 20 pin IC AL 6001 omnivision OV5116 OV5116N SQ cmos sensor 28-pin lcc OV5116MD
Contextual Info: OV5116N OV5116N SINGLE IC CMOS MONOCHROME CAMERA WITH NTSC ANALOG OUTPUT Features Single chip 1/4 inch format video image sensor „ External frame sync capability „ EIA/NTSC output „ 40mw on-chip power consumption „ Selectable mirror image „ External data acquisition support

IRF640N

Abstract: 11A ABS IRF640N FAIRCHILD MOSFET 640N 640N irf640n datasheet N-Channel MOSFET 200v IRF-640N
Contextual Info: IRF640N N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

2N5039

Contextual Info: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N 5038* 2N5039 NPN Silicon Transistors ‘ Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in sw itching regulators, inverters, w id e -b a n d a m p lifie rs and pow er o s c illa to rs in

IRF630N

Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
Contextual Info: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

65e9

Abstract: irfp250n
Contextual Info: IRFP250N N-Channel Power MOSFET 200V, 30A, 0.075Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.052Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

N302AP

Abstract: ISL9N302AP3 1E25 l 129 v 1E40
Contextual Info: ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves

Contextual Info: FDP8874 N May 2008 FDP8874 tmM N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FQP45N03L

Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

Contextual Info: IRFP140N Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title FP1 N bt A, 0V, 40 m, Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

Contextual Info: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

19E-9

Contextual Info: FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low