N50 E Search Results

24N50

Abstract: 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 21 N50 IXFH/IXFM 24 N50 IXFH 26 N50 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

13N50

Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

13N50

Abstract: 1117 MC
Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W £ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

48N50

Abstract: 44N50 IXFK48N50 ixys ixfk 44n50
Contextual Info: HiPerFETTM Power MOSFETs IXFK 44 N50 IXFK 48 N50 VDSS ID25 RDS on 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω trr ≤ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

13N50

Abstract: .15 k 250
Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 Ω ≤ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

STM TO 247 package inductance

Abstract: SS24A 24N50 ixtm21n50 ixys ixth 21N50
Contextual Info: VDSS IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 M egaM O S FET 500 V 500 V D ^D25 DS on 21 A 0.25 ß 24 A 0.23 a N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS ^ = 25°C to 150°C 500 V VooR ^ = 25°C to 150°C; RGS = 1 MQ 500 V VGS VGSM

ixys ixth 21N50

Abstract: 21N50 24N50 ixth21n50
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

gs 1117 ax

Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Contextual Info: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions

48N50

Abstract: W48A IXFN48N50 44N50
Contextual Info: HiPerFETTM Power MOSFETs IXFN 44 N50 IXFN 48 N50 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25

Contextual Info: HiPerFET Power MOSFETs IXFH13N50 IXFM13 N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Maximum Ratings v OSS ^ = 25°C to 150°C 500 V V „ ^ = 25°C to 150°C; Rgs = 1 M fi 500 V VGS VGSM Continuous ±20 V T ransient

ste36n50a

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T E 3 6 N50 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE36N 50A dss 500 V RDS on Id < 0 .1 4 ß 36 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY . VERY LARGE SOA - LARGE PEAK POWER

RFM10N50

Abstract: AN7254 AN7260 RFM10N45 TA17435
Contextual Info: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,

BCT500

Abstract: W25VT YA8CLNT6 Y29-11 YA4CL YA25L-NT516 W25RT YA8CLn YA25LNT14
Contextual Info: DRAWING NO. NAVY CABLE CATALOG NUMBER ACCOMMODATES RG. SIZE^ 1 <1 #8 STR .146 Y A8CL-NT8 N23 #8 STR (.146) YA6CL-NT6 - YA4CL—NT10 N40 YA3CL—NT516 N50 Y A2CL-NT14 N60 YA2CL-NT10 N60 YA2CL-2NT10E2 N60 Y A2CL-2N T14 <jjí] N60 YA2CL—2NT14E2 N60 YA2CL—2NT14E1 < | ]

IXTK33N50

Contextual Info: High Current MegaMOSTMFETs IXTK 33 N50 VDSS = 500 V I D25 = 33 A RDS on = 0.17 Ω Maximum Ratings TO-264 AA N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V

GC550

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T E 26 N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE26N50 V dss 500 V R D S o n Id < 0 .2 Q. 26 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

IXFN61N50

Contextual Info: HiPerFETTM Power MOSFET IXFN 61 N50 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Objective Technical Specification * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

IXFH30N50

Abstract: IXFH32N50
Contextual Info: P R E L IM IN A R Y D A T A S H E E T V DSS HiPerFET Power MOSFETs IXFH30N50 IXFH32 N50 ^D25 p DS on 500 V 30 A 0.16 Q 500 V 32 A 0.15 a trr < 250 ns N-Channel Enhancement Mode High dv/dt, Low HDMOS™ Family Symbol Test Conditions V DSS Tj V DCR Tj = 25°C to

Contextual Info: 5 0 —T S O P 2 —40 0 D F D im e n s io n s in M ilim e ters 11. 7 6 ± o .20 Ü n50 O o m ö X < s: m m n26 «25 0.205 to 050 un un r-. m o o 10.16 0.05MIN LTI CN 1.00 ±0 io 1.20 MAX 0.50 0.45-0.75 SAMSUNG ELECTRONICS CO.,LTD.

MFL-75

Abstract: 4835 mosfet mfl sot
Contextual Info: HiPerFET Power MOSFET IXFN 58N50 IXFN 61 N50 Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V Voon ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V 58 61 232 244 A A A A 61 A = 25°C to 150°C; Rgs= 1.0 MQ Tc = 25°C 'OM Tc = 25°C 1

S1998

Abstract: Coffin-Manson Equation CBGA manson 100C 110C N100 N50M IBM supports ccga CBGA 304 motorola
Contextual Info: CBGA FATIGUE LIFE IMPROVEMENT Marie S. Cole, Gregory B. Martin, Peter J. Brofman and Lewis S. Goldmann IBM Microelectronics Hopewell Jct, New York 12533 Biography Marie Cole is a Senior Engineer in Ceramic Packaging Applications at IBM Microelectronics. She holds a B.S.

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs Devices Use Vishay Planar Cell Technology to Minimize On-Resistance and Withstand High Energy Pulses KEY BENEFITS • 16 A, 500 V, RDS on max. = 380 mW at VGS = 10 V • Low gate charge: Qg max. = 68 nC

6Y50

Abstract: LN506OA LN506OK LN506YA LN506YK LNM476AA01 LNM476KA01 LNM876AA01 LNM876KA01
Contextual Info: Numeric Display 14.4 mm .6” Series d a e dp1 b dp2 1 2 3 4 5 8.0 ± 0.25 3.5 Min. *15.24 ± 0.38 10° Pin Assignment No. 1 Cathode e 10 9 8 7 6 c Amber Amber Orange Orange 0.5 4.5 Assignment 3.0 LN506YA •················· LNM476AA01 ··········

Contextual Info: Bandreject Filters ◆ Features ◆ To Order K&L's six models of fixed frequency bandreject filters cover the frequency range of 1MHz to 10GHz. Each model offers the user low passband insertion loss, high notch attenuation, and convenient sizes. Standard models