N50 E Search Results

24N50

Abstract: 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 21 N50 IXFH/IXFM 24 N50 IXFH 26 N50 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

13N50

Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

13N50

Abstract: 1117 MC
Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W £ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

48N50

Abstract: 44N50 IXFK48N50 ixys ixfk 44n50
Contextual Info: HiPerFETTM Power MOSFETs IXFK 44 N50 IXFK 48 N50 VDSS ID25 RDS on 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω trr ≤ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

13N50

Abstract: .15 k 250
Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 Ω ≤ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

STM TO 247 package inductance

Abstract: SS24A 24N50 ixtm21n50 ixys ixth 21N50
Contextual Info: VDSS IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 M egaM O S FET 500 V 500 V D ^D25 DS on 21 A 0.25 ß 24 A 0.23 a N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS ^ = 25°C to 150°C 500 V VooR ^ = 25°C to 150°C; RGS = 1 MQ 500 V VGS VGSM

ixys ixth 21N50

Abstract: 21N50 24N50 ixth21n50
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

gs 1117 ax

Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Contextual Info: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions

48N50

Abstract: W48A IXFN48N50 44N50
Contextual Info: HiPerFETTM Power MOSFETs IXFN 44 N50 IXFN 48 N50 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25

Contextual Info: HiPerFET Power MOSFETs IXFH13N50 IXFM13 N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Maximum Ratings v OSS ^ = 25°C to 150°C 500 V V „ ^ = 25°C to 150°C; Rgs = 1 M fi 500 V VGS VGSM Continuous ±20 V T ransient

RFM10N50

Abstract: AN7254 AN7260 RFM10N45 TA17435
Contextual Info: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,

BCT500

Abstract: W25VT YA8CLNT6 Y29-11 YA4CL YA25L-NT516 W25RT YA8CLn YA25LNT14
Contextual Info: DRAWING NO. NAVY CABLE CATALOG NUMBER ACCOMMODATES RG. SIZE^ 1 <1 #8 STR .146 Y A8CL-NT8 N23 #8 STR (.146) YA6CL-NT6 - YA4CL—NT10 N40 YA3CL—NT516 N50 Y A2CL-NT14 N60 YA2CL-NT10 N60 YA2CL-2NT10E2 N60 Y A2CL-2N T14 <jjí] N60 YA2CL—2NT14E2 N60 YA2CL—2NT14E1 < | ]

IXTK33N50

Contextual Info: High Current MegaMOSTMFETs IXTK 33 N50 VDSS = 500 V I D25 = 33 A RDS on = 0.17 Ω Maximum Ratings TO-264 AA N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V

Contextual Info: 5 0 —T S O P 2 —40 0 D F D im e n s io n s in M ilim e ters 11. 7 6 ± o .20 Ü n50 O o m ö X < s: m m n26 «25 0.205 to 050 un un r-. m o o 10.16 0.05MIN LTI CN 1.00 ±0 io 1.20 MAX 0.50 0.45-0.75 SAMSUNG ELECTRONICS CO.,LTD.

MFL-75

Abstract: 4835 mosfet mfl sot
Contextual Info: HiPerFET Power MOSFET IXFN 58N50 IXFN 61 N50 Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V Voon ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V 58 61 232 244 A A A A 61 A = 25°C to 150°C; Rgs= 1.0 MQ Tc = 25°C 'OM Tc = 25°C 1

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs Devices Use Vishay Planar Cell Technology to Minimize On-Resistance and Withstand High Energy Pulses KEY BENEFITS • 16 A, 500 V, RDS on max. = 380 mW at VGS = 10 V • Low gate charge: Qg max. = 68 nC

6Y50

Abstract: LN506OA LN506OK LN506YA LN506YK LNM476AA01 LNM476KA01 LNM876AA01 LNM876KA01
Contextual Info: Numeric Display 14.4 mm .6” Series d a e dp1 b dp2 1 2 3 4 5 8.0 ± 0.25 3.5 Min. *15.24 ± 0.38 10° Pin Assignment No. 1 Cathode e 10 9 8 7 6 c Amber Amber Orange Orange 0.5 4.5 Assignment 3.0 LN506YA •················· LNM476AA01 ··········

TA17465

Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
Contextual Info: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated

1xys

Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Contextual Info: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500

IXTN36N50

Contextual Info: • 4 b û b 2 2 b O G O l ûl l TTfl ■ IX Y DIXYS Pow er M O S FE T IX T N 3 6 N 4 5 IX T N 3 6 N 5 0 N-Channel Enhancement Mode D cont v¥ p dss DS(on) = 36 A = 450/500 V = 0 .1 2 & R = 0.5 Q Symbol Test Conditions Voss Tj = 25°C to 150°C Maximum Ratings

smm series

Abstract: 22A53
Contextual Info: SMM SERIES Engineering Bulletin Mar 07 SMM Series Ⅲ The SMM series is a high voltage, long life snap-in capacitor series that offers downsized versions of the SMH series. Compared to our SMH series, the SMM capacitors have a longer rated lifetime of 3,000 hours with the full rated ripple current applied and are also one case size smaller than

PAL 007 B

Abstract: pal 007 PAL 007 c OmniVision CMOS Camera Module OmniVision Technologies CMOS Camera Module external sync OV5116 CMOS image sensor PAL omnivision PAL 007 A AEC Crystal Resonator
Contextual Info: OV5116P OV5116P SINGLE IC CMOS MONOCHROME CAMERA WITH PAL ANALOG OUTPUT Features Single chip 1/4 inch format video image sensor „ External frame sync capability „ CCIR/PAL output „ 40mw on-chip power consumption „ Selectable mirror image „ External data acquisition support

SMM Series

Abstract: ESMM401VSN561MA40T smh series chemicon capacitor snap in PET sleeve with end disk R35-R40
Contextual Info: SMM SERIES Engineering Bulletin Mar 07 SMM Series Ⅲ The SMM series is a high voltage, long life snap-in capacitor series that offers downsized versions of the SMH series. Compared to our SMH series, the SMM capacitors have a longer rated lifetime of 3,000 hours with the full rated ripple current applied and are also one case size smaller than