N128 Search Results

Contextual Info: N128D1618LPAW Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1618LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: N128D3218LPAF2 Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3218LPAF2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: N128D3233LPAF2 Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3233LPAF2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: N128D1633LPAG2 Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1633LPAG2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: N128R3225GAK2 1M x 32Bit x 4Banks Double Data Rate Synchronous DRAM DISCRIPTION The N128R3225GAK2 is 134,217,728 bits of double data rate synchronous dynamic RAM organized as 4 x 1,048,576 bits by 32 I/Os. Synchronous features with Data Strobe allow extremely high performance up to 400M bps/pin. I/O transactions are possible on both

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

h1010

Contextual Info: MECHANICAL DATA MPBG009 – NOVEMBER 1995 GGA S-PBGA-N128 PLASTIC BALL GRID ARRAY PACKAGE 7,10 6,90 1 A B C D E F G H 10,10 9,90 J K 0,50 L M N P R T 0,50 0,50 0,95 0,85 0,12 0,08 1,20 MAX 0,32 0,22 0,08 M 0,25 0,20 0,08 4073210/A 12/95 NOTES: A. All linear dimensions are in millimeters.

Contextual Info: N128D3218LPAW Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3218LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: SANGDEST MICROELECTRONICS SDUR6040W Technical Data Data Sheet N1281, Rev. - Green Products SDUR6040W ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B/D1560CT Green Products Technical Data Data Sheet N1286, Rev. - SDUR/B/D1560CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

Contextual Info: N128D1633LPAW Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1633LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: MECHANICAL DATA MPBG033B – FEBRUARY 1997 – REVISED MARCH 1999 GGB S-PBGA-N128 PLASTIC BALL GRID ARRAY 9,60 TYP 12,10 SQ 11,90 0,80 0,80 N M L K E H G F E D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 0,95 0,85 1,40 MAX Seating Plane 0,12 0,08 0,55 0,45 0,08 M

Contextual Info: 127.75MHz SAW Filter 18MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. N12801 Part Number:LB Number:N12801 www. sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation

Contextual Info: SDUR560 SDURB560 SDURF560 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1282, Rev. - Green Products SDUR560/SDURB560/SDURF560 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices

N1283

Contextual Info: SANGDEST MICROELECTRONICS SDURD860 Green Products Technical Data Data Sheet N1283, Rev. - SDURD860 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode

Contextual Info: SANGDEST MICROELECTRONICS SDURD1560 Green Products Technical Data Data Sheet N1288, Rev. - SDURD1560 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode

N1283CH

Abstract: IT5000
Contextual Info: Provisional Data  WESTCODE Date: November, 2000 Data Sheet: 99T03 Issue: 3 Absolute maximum ratings VOLTAGE RATINGS   Phase Control Thyristor Types N1283CH43 to N1283CH52 MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage note 1 4300-5200 V VDSM

Contextual Info: MECHANICAL DATA MPBG033 – JANUARY 1997 GGB S-PBGA-N128 PLASTIC BALL GRID ARRAY PACKAGE 12,10 SQ 11,90 13 12 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N 0,80 0,80 0,95 0,85 0,12 0,08 1,40 MAX 0,55 0,45 0,08 M 0,45 0,35 0,10 4073211-3/B 10/96 NOTES: A. All linear dimensions are in millimeters.

Contextual Info: N128D1618LPAG2 Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1618LPAG2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: N128D3233LPAW Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3233LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

DSAIH0002567

Contextual Info: B K C I N T E RN A TI O N AL OBE D | 117^03 DGGD133 4 J~~ _ Type No.1 N128_ T-0/-07 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 Tele Fax (617) 681-9135

SCB-0340N

Abstract: WLL6160-D99 KSB0405HA M470T2864QZ3-CF7 AR5B95 BA59-02608A M470T2864QZ3-CE6 RT8205AGQW T77H121 M470T2864EH3-CF7
Contextual Info: - This Document can not be used without Samsung's authorization - Part List : NP-N128-DA01RU Ver. Location 0001 A0010 Part Number 3903-000444 CBF-POWER CORD;DT,EU/KR,CP3,IEC320 C5,25 Part Name & Specification Q'ty SA/SNA 1 SA Parent Part 0001 A1001 BA46-11503A S/W CD;UTILITY,SPRINGFIELD,-,1.0,EXPORT,

Contextual Info: SANGDEST MICROELECTRONICS SDURB D 1060CT Green Products Technical Data Data Sheet N1284, Rev. - SDURB/D1060CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

Contextual Info: SANGDEST MICROELECTRONICS SDUR3040W Technical Data Data Sheet N1280, Rev. - Green Products SDUR3040W ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode