N-CHANNEL POWER MOSFET 600V Search Results

APT34M60B

Abstract: APT34M60S MIC4452
Contextual Info: APT34M60B APT34M60S 600V, 34A, 0.21Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS on = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)

FQB8N60CF

Abstract: FQB8N60CFTM
Contextual Info: TM FRFET FQB8N60CF 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS on = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)

Contextual Info: BLV4N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 2.2Ω Ω • Simple Drive Requirements ID 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

APT28F60B

Abstract: APT28F60S MIC4452
Contextual Info: APT28F60B APT28F60S 600V, 28A, 0.25Ω Max, trr ≤230ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT34F60B

Abstract: APT34F60S MIC4452
Contextual Info: APT34F60B APT34F60S 600V, 34A, 0.21Ω Max, trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT42F50B

Abstract: APT42F50S MIC4452
Contextual Info: APT42F50B APT42F50S 600V, 42A, 0.14Ω Max, trr, ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT18F60B

Abstract: APT18F60S MIC4452
Contextual Info: APT18F60B APT18F60S 600V, 18A, 0.39Ω Max, trr ≤200ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT13F120B

Abstract: APT13F120S MIC4452
Contextual Info: APT13F120B APT13F120S 1200V, 13A, 1.40Ω Max, trr, ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

IXFB110N60P3

Contextual Info: Advance Technical Information IXFB110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 600V 110A Ω 56mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

GE03N70

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE03N70 BVDSS 600/650/700V RDS ON 4.0 ID 3.3A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GE03N70 series are specially designed as main switching devices for universal 90~265VAC off-line

KHB7D5N60F1

Abstract: KHB7D5N60F KHB7D5N60P1
Contextual Info: SEMICONDUCTOR KHB7D5N60P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D5N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

FV4N150

Abstract: JESD97 STFV4N150
Contextual Info: STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching

GE01N60

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/01/27 REVISED DATE : GE01N60 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 600V 8 1.6A Description The GE01N60 provide the designer with the best combination of fast switching. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for

Contextual Info: INTERNATIONAL RECTIFIER bSE D • M Ö S S 4S 2 0 D 1 Ö 21 4 b41 ■ INR Provisional Data Sheet P D -6.0 26 INTERNATIONAL RECTIFIER I « R POWER MOSFET/IGBT GATE DRIVER IR2112 General Description Features The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high

Contextual Info: Inte rna 11o na I c*»si»* no.p«.«»c l R Rectifier IR2 1 1 7 SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: Data Sheet No. PD60147J International IO R Rectifier IR2110/IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +500V or +600V • • • • • • • Tolerant to negative transient voltage

STD1NB60

Contextual Info: STD1NB60 N - CHANNEL 600V - 7.4Ω - 1A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STD1NB60 600 V < 8.5 Ω 1A • ■ ■ ■ ■ TYPICAL RDS(on) = 7.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFBC30

Contextual Info: IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ΙΙ MOSFET TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: DATE CHECKED Jan./26/’10 REVISIONS CHECKED Jan./26/’10 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes

k2624

Abstract: test mosfet k2624 mosfet k2624 how to test k2624 2SK2624ALS Package Marking .8A
Contextual Info: 2SK2624ALS Ordering number : ENA0362A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2624ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: International IS Rectifier Preliminary Data Sheet No. PD-6.102 IR2233 3-PHASE BRIDGE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +1200V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V