N-CHANNEL DEPLETION-MODE MOSFET HIGH VOLTAGE Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601Q Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: ir e s ft DMCD1 DIE N-Channel Depletion-Mode Lateral DMOS FETs The DMCD is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the operating

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET 3 „ DESCRIPTION 1 2 The UTC UF601 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.

SD2100

Contextual Info: SD2100 N-Channel Depletion-Mode Lateral DMOS FET in c o r p o ra t e d The SD2100 is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the

IXTA02N100D2

Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
Contextual Info: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .

sst2100

Abstract: LPD-12
Contextual Info: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high

LND01K1-G

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

ALD114904ASAL

Contextual Info: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD114804/ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS th = -0.40V GENERAL DESCRIPTION APPLICATIONS ALD114804/ALD114804A/ALD114904/ALD114904A are high precision monolithic

Contextual Info: ADVANCED LINEAR DEVICES, INC. e TM EPAD EN AB LE D ALD114804/ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS th = -0.40V GENERAL DESCRIPTION APPLICATIONS ALD114804/ALD114804A/ALD114904/ALD114904A are high precision monolithic

N-Channel Depletion-Mode MOSFET

Abstract: TA 7061 52426 ND2020L
Contextual Info: Temic ND2012L/2020L Semiconductors N-Channel Depletion-Mode MOSFET Transistors Product Summary P a rt N um ber V<BR DSV M in V) ND2012L ND2020L 200 Features • • • • • High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Q Low Input and Output Leakage

01N100D

Abstract: 98809b ON 534 TO252 01N1
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000

10N100D

Abstract: DSA003705
Contextual Info: Advance Technical Information High Voltage MOSFET N-Channel, Depletion Mode VDSS = 1000 V = 10 A ID25 RDS on = 1.4 Ω IXTH 10N100D IXTT 10N100D TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C

3551S

Contextual Info: Preliminary Technical Information IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 N-Channel, Depletion Mode = = ≤ RDS on 500V 20A 330mΩ Ω TO-268 G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ

nd2020

Abstract: ND2012L ND2020L S-52426 2020L
Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V

Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V

02N5

Abstract: IXTP 02N50D
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 02N50D IXTU 02N50D IXTY 02N50D VDSS = 500 V ID25 = 200 mA RDS on = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS Continuous