IXTH20N50D Search Results

3551S

Contextual Info: Preliminary Technical Information IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 N-Channel, Depletion Mode = = ≤ RDS on 500V 20A 330mΩ Ω TO-268 G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ

IXTT20N50D

Abstract: IXTH20N50D 20n50 20N50D siemens relay rg
Contextual Info: IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 = = ≤ RDS on N-Channel, Depletion Mode 500V 20A Ω 330mΩ TO-268 (IXTT) G D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±30

Contextual Info: VDSX ID25 IXTH20N50D IXTT20N50D High Voltage MOSFET = = ≤ RDS on N-Channel, Depletion Mode 500V 20A Ω 330mΩ TO-268 (IXTT) G D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±30

IXTH20N50D

Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
Contextual Info: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.