N-CHANNEL 60V Search Results

Contextual Info: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998

3055L transistor

Abstract: Mosfet Sot223
Contextual Info: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,

mosfet pch 3a 60v

Abstract: JESD97 STS4C3F60L
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

irfd113

Abstract: IRFD110R IRFD111R IRFD112R IRFD113R IRFD111
Contextual Info: _Rugged Power MOSFETs File N um ber IRFD110R, IRFD111R, IRFD112R, IRFD113R 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V ros on = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: • Single pulse avalanche energy rated

IRF530

Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
Contextual Info: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V

Contextual Info: LT3745-1 16-Channel 50mA LED Driver with Buck Controller DESCRIPTION FEATURES n n n n n n n n n n The LT 3745-1 integrates a 16-channel LED driver with a 55V buck controller. The LED driver lights up to 75mA/36V of LEDs in series per channel, and the buck controller generates an adaptive bus voltage supplying the parallel LED

MAX378-MAX379

Contextual Info: 19-1902; Rev 1; 8/94 High-Voltage, Fault-Protected Analog Multiplexers _Features The MAX378 8-channel single-ended 1-of-8 multiplexer and the MAX379 4-channel differential (2-of-8) multiplexer use a series N-channel/P-channel/N-channel structure to

702 mosfet

Abstract: code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

702 sot 23

Abstract: 702 sot-23 2N7002 MARKING 702 RG 702 702 TRANSISTOR 2N7002 702 TRANSISTOR sot-23 702 sot
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

transistor 702g

Abstract: 702g CMPDM7002AG 2N7002 CMPDM7002A C702A
Contextual Info: CMPDM7002A CMPDM7002AG Central TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002A and CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS

apm4588

Abstract: APM4588K STD-020C
Contextual Info: APM4588K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 60V/5A, RDS(ON) = 38mΩ (typ.) @ VGS = 10V RDS(ON) = 55mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -60V/-3.5A, RDS(ON) = 80mΩ (typ.) @ VGS =-10V

p-channel mosfet

Abstract: DIODE 240v 3a KQS4900 logic level n channel MOSFET P Channel Low Gate Charge mosfet p-channel 300v
Contextual Info: IC IC SMD Type Dual N & P-Channel, Logic Level MOSFET KQS4900 Features N-Channel 1.3 A, 60 V RDS ON = 0.55 RDS(ON) = 0.65 @ VGS = 10 V @ VGS =5V P-Channel -0.3 A, -300V RDS(ON) = 15.5 RDS(ON) = 16 @ VGS =- 10V @ VGS =-5V Low gate charge ( typical N-Channel 1.6 nC)

I22R

Abstract: IRFF122R IRFF120R IRFF121R IRFF123R IRFFI22R
Contextual Info: Rugged Power MOSFETs_ IRFF120R, IRFF121R, IRFFI22R, IRFF123R File Num ber 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ib s o n = 0.300 and 0.400 N-CHANNEL ENH ANCEM ENT M ODE Feature«: • Single pulse avalanche energy rated

F110F

Abstract: SK 6211 TD-205A flower in the rain IRFF110R IRFF111R IRFF112R IRFF113R
Contextual Info: Rugged Power M OSFETs File N u m b e r 2022 IRFF110R, IRFF111R.IRFF112R, IRFF113R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 60V-100V rDs on = 0.60 and 0.8CÎ N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS

CMLDM7002AG

Abstract: CMLDM7002AJ CMLDM7002A
Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS

Complementary MOSFETs

Abstract: CMLM0708A C78 diode
Contextual Info: CMLM0708A MULTI DISCRETE MODULE SURFACE MOUNT N-CHANNEL AND P-CHANNEL COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0708A is a Multi Discrete Module™ consisting of complementary N-Channel and P-Channel Enhancement-mode

STU612D

Contextual Info: STU612D Green Product S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor N and P Channel PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID 60V 8.6A R DS(ON) (m Ω) Max V DSS ID -60V

Contextual Info: FDS5690 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

CBVK741B019

Abstract: F011 F63TNR F852 FDS5680 FDS9953A L86Z
Contextual Info: FDS5680 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: TM FQP30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FDS5680 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

125OC

Abstract: 2N7002
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS

2N7002

Abstract: CMPDM7002A
Contextual Info: CMPDM7002A N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed