N MOSFET LOW VGS Search Results

4N65L-TA3-T

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-N Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-N is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed This MOSFET has been designed to minimize the on-state

2N7002A-RTK/P

Contextual Info: 2N7002A Green N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed This MOSFET has been designed to minimize the on-state

Contextual Info: DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance • 20m @ VGS = 10V • 27m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

k72 diode

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C • Dual N-Channel MOSFET • Low On-Resistance 60V 7.5Ω @ VGS = 5V 0.23A • Low Gate Threshold Voltage • Low Input Capacitance Description

tc 971

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-N Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-N is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: DMN2040LTS N EW PRODU CT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

N3033LD

Contextual Info: DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance • 20mΩ @ VGS = 10V • 27mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

2N7002-13-F

Abstract: 2N7002Q-7-F mosfet 2n7002 2N7002-7-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

FW502

Abstract: EN8751
Contextual Info: FW502 Ordering number : EN8751 SANYO Semiconductors DATA SHEET FW502 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, N-channel MOSFET and

2N7002 equivalent

Abstract: 2N7002Q-7-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).

k72 diode

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode n n n n n n Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1

Contextual Info: LM2744 LM2744 Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller with External Reference Literature Number: SNVS292D LM2744 Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller with External Reference General Description Features

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK4145 Preliminary Power MOSFET SWITCHING N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UK4145 is N-channel power MOSFET, suitable for high current switching applications. „ FEATURES * Low on-state resistance: RDS ON =10mΩ (Max.) @ VGS =10V, ID =42A

Contextual Info: DMG4822SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 30V 20mΩ @ VGS = 10V 10A • • • • • • • • • N-Channel MOSFET Low On-Resistance Low Input Capacitance

Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: DMG1024UV N EW PRODU CT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

marking 340G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS ON and low gate charge. This device can be operated with 2.5V low gate voltage.

4910n

Abstract: PN channel MOSFET 10A
Contextual Info: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK4145 Preliminary Power MOSFET SWITCHING N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UK4145 is N-channel power MOSFET, suitable for high current switching applications. „ FEATURES * Low on-state resistance: RDS ON =10mΩ (Max.) @ VGS =10V, ID =42A