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    Pulse Electronics Corporation RO4910NM

    - Bag (Alt: RO4910NM)
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    Avnet Americas RO4910NM Bag 8 Weeks 20
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    Mouser Electronics RO4910NM
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    Newark RO4910NM Bulk 20
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    • 100 $99.06
    • 1000 $95.10
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    Pulse Electronics Corporation PA1294.910NLT

    - Tape and Reel (Alt: PA1294.910NLT)
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    Avnet Americas PA1294.910NLT Tape & Reel 17 Weeks, 1 Days 250
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    Pulse Electronics Corporation PA1294.910NL

    - Trays (Alt: PA1294.910NL)
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    Avnet Americas PA1294.910NL Tray 17 Weeks, 1 Days 630
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    Pulse Electronics Corporation RO4910NF

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    Avnet Americas RO4910NF Bag 8 Weeks 21
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    Mouser Electronics RO4910NF
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    Newark RO4910NF Bulk 20
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    RAF Electronic Hardware M0849-10-n

    Standoffs & Spacers 19mm Rd X 20mm X 10.5mm ID
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    Mouser Electronics M0849-10-n
    • 1 $6.78
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    Find more 4910N price and stock on Findchips.com

    4910N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10NG

    Abstract: 369D NTD4910NT4G 4910N
    Contextual Info: 4910N Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		ntd4910nntd4910n/d10ng369d+2ntd4910nt4g4910n PDF

    PN channel MOSFET 10A

    Abstract: 4910N AF4910N
    Contextual Info: 4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		af4910n4910n015x45pn channel mosfet 10a PDF

    Contextual Info: 4910N Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original     		ntd4910nntd4910n/d PDF

    PN channel MOSFET 10A

    Abstract: AF4910N 4910n
    Contextual Info: 4910N Dual N-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter


    Original     		af4910n015x45pn channel mosfet 10a4910n PDF

    10NG

    Abstract: 369D NTD4910NT4G
    Contextual Info: 4910N Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		ntd4910nntd4910n/d10ng369d+1ntd4910nt4g PDF

    Contextual Info: 4910N Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original     		ntd4910nntd4910n/d PDF

    4910n

    Abstract: PN channel MOSFET 10A
    Contextual Info: 4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		af4910n4910npn channel mosfet 10a PDF