N CHANNEL MOSFET INSULATED Search Results

BSS83 M74

Abstract: mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor

depletion MOSFET

Abstract: n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSD22 MOSFET N-channel depletion switching transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor

95160

Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
Contextual Info: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with

BSD20

Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
Contextual Info: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.

transistor BD 339

Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
Contextual Info: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.

Contextual Info: BSS83 _ _ Jv _ MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

Contextual Info: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

BSD12

Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
Contextual Info: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

Contextual Info: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

BSD215

Abstract: bsd214 BSD212 BSD213 transistor BD 341
Contextual Info: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high

Contextual Info: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared

Depletion MOSFET

Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
Contextual Info: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

transistor d 1557

Contextual Info: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

transistor d 1557

Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74
Contextual Info: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.

BSD10

Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
Contextual Info: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

DIODE 6AA

Abstract: 1E14 2E12 OM130STC 51W diode
Contextual Info: OM13QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE N-CHANNEL 100V, 10 Amp, N-Channel, Radiation Hardened Power MOSFET In A Hermetic Meta! Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package

1E14

Abstract: 2E12 OM130STC 51W diode
Contextual Info: OM130STC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE N-CHANNEL 100V, 10 Amp, N-Channel, Radiation Hardened Power MOSFET In A Hermetic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package

MARKING CODE Zi sot363

Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
Contextual Info: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source

transistor BD 430

Abstract: Depletion
Contextual Info: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

Contextual Info: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-'*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology

Contextual Info: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

ufn730

Abstract: UFN731
Contextual Info: UNITRODE CORP 9347963 M | cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.

depletion MOSFET

Abstract: BSD22 n mosfet depletion transistor MARKING CODE RJ
Contextual Info: bb53^31 □QSSMM'Î ^05 HIAPX • N AUER PHILIPS/DISCRETE BSD22 b?E D J MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR S ym m etrical insulated-gate silicon MOS fre ld -e ffe ct tran sisto r o f the n-channel d e p le tio n m ode type. The tran sisto r is sealed in a SO T-143 envelope and features a lo w ON-resistance and lo w capacitances.

bsd214

Abstract: philips bsd215 BSD213 BSD215 BSD212 KT 117 diode t7e L7E transistor IEC134
Contextual Info: • titiS3T31 00E374S 15fl ■ N AUER P H I L I P S / D I S C R E T E APX BSD212 to BSD215 L7E D MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon M O S field-effect transistor of the N-channel enhancement mode type. These transistors are herm etically sealed in a TO-72 envelope and feature a low ON-resistance, high