MXIC SEQUENTIAL Search Results

Contextual Info: MXIC M X29L8000T/ B 8 M-BIT [1 M X 8 ] CMOS VOLTAGE 3 V ONLY FLASH EEPROM S IN G L I FEATURES • Auto Page Program operation - Automatically programs and verifies data at specified addresses - Internal address and data latches for 128 bytes per page • Low power dissipation

Contextual Info: MX23C6411 MXIC 64M-Bit Mask ROM 8/16 Bit Output ORDER INFORMATION FEATURES • Bit organization 4M x 16 (word mode) • Fast access time Part No. Access Time Page Access Time Package M X23C6411MC-12 120ns 50ns 44 pin SOP M X23C6411TC-12 120ns 50ns 48 pin TSOP

Contextual Info: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture

Electrolytic Capacitors Quality flowchart

Abstract: 2N440 MX26C1000B MX26C2000B MX26C4000B 4000B
Contextual Info: MACRONIX INTERNATIONAL Co., LTD. Page: 1 Taipei Office: 12F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886 02-25093300 Fax: (886) 02-25092200 Modem: (886) 02-25045679 In-System Programming of MXIC’s MTP MX26C1000B/2000B/4000B The MX26C1000B, MX26C2000B and MX26C4000B, 1Mb, 2Mb and 4Mb MTP ROM

Contextual Info: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture

26C1024

Contextual Info: M S IC M X26 C 10 24A 1 M-BIT 6 4 K x 1 6 CMOS MULTIPLE-TIME-PROGRAMMABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% p rog ram/e rase voltage Fast access time: 70/90/100/120 ns

Contextual Info: IW DCIC FEATURES MX29F1 61 1 16M -BIT[2M x 8 /1 M x 1 61 CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JED EC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns

X29L8000

Contextual Info: IW DCIC M X 29L8000T/B 8M-BIT [1 M x S] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Auto Page Program operation - Automatically programs and verifies data at specified addresses - Internal address and data latches for 128 bytes per page • Low power dissipation

mxic 29lv160

Abstract: 29lv160 Flash 29LV160 MX29LV160 29lv intel 28f160 28F160C3 FBGA48 amd Block Lock Bit amd Block Lock Bit Reset
Contextual Info: Macronix International Co., Ltd. Taipei Office: 12F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886-2-25093300 Fax: 886-2-25092200 Subject: Shorten the engineer’s efforts for designing in MX29LW160T/B and MX29LV160 instead of Intel 28F160B3/C3 and AMD Am29LV160.

A1T TRANSISTOR

Contextual Info: IMDCIC MX29F81OO 8M -BITI1 M x 8 /5 1 2K x 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V +10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture

Contextual Info: ^ E O M O i/^ Y MX26C1024A 1 M -BIT 64 K X 1 6 CM OS M ULTIPLE-TIM E-PROGRAM M ABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% program/erase voltage

00F1H

Contextual Info: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

MX25L1605

Abstract: MX25L1605M MX25L6405 MX25L1605MC PM1168 C214P IN3064 MX25L3205
Contextual Info: MX25L1605 Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure

BP200

Abstract: MXIC serial Flash MX25L1605 ad20bit4 25L1605
Contextual Info: MX25L1605 Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure

MX25L1605ZM

Abstract: 25l1605 8x6mm MX25L1605 IN3064 256-Byte
Contextual Info: MX25L1605ZM Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure

MXIC sequential

Contextual Info: MX25L3205 Macronix NBit TM Memory Family FEATURES 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure

flash TYPE mx25l3205A

Contextual Info: MX25L3205A Macronix NBit TM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY FEATURES - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure

MX25L3205A

Abstract: 3205a MX25L3205AMI-20 mx25l3205amc-20g MX25L3205 IN3064 flash TYPE mx25l3205A
Contextual Info: MX25L3205A Macronix NBit TM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY FEATURES - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure

Contextual Info: PRELIMINARY MX25L3205A Macronix NBit TM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY FEATURES - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure

25L3205

Abstract: MX25L3205 MX25L6405 8096 instruction set ad8b IN3064 MX25L3205MC-20 MX25L1605 MX25L3205MI-20
Contextual Info: MX25L3205 Macronix NBit TM Memory Family FEATURES 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure

Contextual Info: MX25L1605 Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure

MXIC serial Flash

Contextual Info: MX25L3205A Macronix NBit TM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY FEATURES - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure

25L6405

Abstract: MX25L6405
Contextual Info: MX25L6405 Macronix NBit TM Memory Family FEATURES 64M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 67,108,864 x 1 bit structure • 128 Equal Sectors with 64K byte each - Any sector can be erased

pm1168

Abstract: MX25L1605 MX25L1605M
Contextual Info: MX25L1605 Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure