MXIC FLASH Search Results

MX29GL640E

Abstract: MX29GL640EB MX29GL640EL MX29GL640ET 00C2H 220ch 2201H mx29gl640
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/B vs MXIC Flash MX29GL640E/H/L/T/B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 07/21

KH25L3205

Abstract: KH25L3205D EN25Q32 EN25 SOP 8 200MIL EN25Q32A mxic KH25L VDFN
Contextual Info: Eon Silicon Solution Inc. Application Note EON EN25Q32A vs MXIC KH25L3205D Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc.

MX25L25635E

Abstract: mx25l25635 MX25L256 EN25QH256 EN25QH 32768KB MX25L25
Contextual Info: Eon Silicon Solution Inc. Application Note EON EN25QH256 vs MXIC MX25L25635E Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc.

MX29GL128eh

Abstract: EN29GL128H EN29GL128 MX29GL128 MX29GL128E 00C2H
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs MXIC Flash MX29GL128EH/L This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 2005 Eon Silicon Solution Inc. www.eonssi.com

EN29LV160BB

Abstract: EN29LV160BT MX29LV160D MX29LV160DB MX29LV160DT 2249h EN29LV160b mxic
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV160B vs MXIC Flash MX29LV160D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 2005 Eon Silicon Solution Inc. www.ession.com

Contextual Info: MXIC MX28F002T/ B 2 M -BIT[2 5 6 K X 8 ] CMOS FLASH MEMORY FEATURES 262,144 bytes by 8-bit organization Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 10OnAmaximum standby current Programming and erasing voltage 12V ± 5%

EN29LV320BB

Abstract: EN29lv320BT MX29LV320DB EN29LV320B MX29LV320D MX29LV320DT
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV320B vs MXIC Flash MX29LV320D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 2005 Eon Silicon Solution Inc. www.ession.com

Contextual Info: MXIC M X29L8000T/ B 8 M-BIT [1 M X 8 ] CMOS VOLTAGE 3 V ONLY FLASH EEPROM S IN G L I FEATURES • Auto Page Program operation - Automatically programs and verifies data at specified addresses - Internal address and data latches for 128 bytes per page • Low power dissipation

MX25L1605D

Abstract: EN25F16 mxic mx25l1605 application 6mmx5mm
Contextual Info: Eon Silicon Solution Inc. Application Note EON EN25F16 vs MXIC MX25L1605D Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 01/11

AMD flash

Abstract: mxic MX29L160 MX29F004 MX29f001 MX29F002 MX29F016 MX29F022 MX29F040 MX29F100
Contextual Info: MACRONIX Page: INTERNATIONAL Co., LTD. 1 V2.3 Design Notes: The sample-code is used to describe how to design the s/w for MXIC flash. The following sample codes are suitable for all of AMD compatible flash, as MX29F001, MX29F100, MX29F002 N , MX29F022(N), MX29F200, MX29F004, MX29F040, MX29F400, MX29F800,

AM29F040B

Abstract: EN29F040A
Contextual Info: APPLICATION NOTE EN29F040A EN29F040A Application Note 4 Megabit 512K x 8-bit Flash Memory Uniform Sector Flash Memory, CMOS 5.0 Volt-only The EN29F040A is a high-performance 4-Megabit flash memory, which has the same features with the flash memories provided by other major vendors like SPANSION(AMD, Fujitsu), MXIC

Contextual Info: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture

smd 1gw

Abstract: 1GW smd code transistor 93C46 dip 1GW smd code smd 1gw 23 1gw 82 smd LF8200 BPA16 HSIP-002 BPA12
Contextual Info: INDEX PRELIMINARY MX98725 APPLICATION NOTE 1. INTRODUCTION The purpose of this application note is to describe the implementation of a PCI bus master 100 Base-TX Fast Ethernet node using MXIC’ highly integrated single chip Fast Ethernet NIC controller MX98725. In details, this

E108998

Abstract: Belden, E108998, 16 AWG CABLE E138034 CABLE E108998 MX98728EC E108998, 16 AWG CABLE 4PR24 1583a 4pr24 e108998 marking code C66 Belden, E108998 st6118
Contextual Info: PRELIMINARY MX98728EC APPLICATION NOTE 1. INTRODUCTION The purpose of this application note is to describe the Implementation of a generic bus 100Base-TX Fast Ethernet node using MXIC highly integrated single chip Fast Ethernet controller MX98728EC series. Most description in this application note applied to both

EN29LV400

Abstract: EN29LV400A
Contextual Info: APPLICATION NOTE EN29LV400A EN29LV400A Application Note 4 Megabit 512K x 8-bit / 256K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only The EN29LV400A is a high-performance 4-Megabit flash memory, which has the same features with the flash memories provided by other major vendors like SPANSION(AMD, Fujitsu), MXIC

Contextual Info: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture

Contextual Info: P tF S IL C llB K ^ Í P lV MXIC M X28F2000P 2M-BITÍ256K x 8 CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption - 50mA maximum active current - 100jiA maximum standby current • Programming and erasing voltage 12V ± 5%

Contextual Info: MXIC M X 28F002T/B 2 M - B I T J 2 5 6 K x 8 C M O S FLA SH M E M O R Y FEATURES 262,144x8 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100jiAmaximum standby current Programming and erasing voltage 12V ± 5%

WINBOND APPLICATION NOTE

Abstract: WINBOND Serial flash cross reference S25FL080A mxic spi flash MXIC Lot Code Identification AT25F4096 MXIC SPI Flash MXIC serial Flash MX25L8005
Contextual Info: 4M-8M SPI Cross Reference Spansion , STM®, SST®, MXIC, Atmel® & Winbond® Application Note By: Victor Li 1. Introduction Spansion provides a wide range of SPI Serial Peripheral Interface Flash from 4 Mbits to 128 Mbits. The 4-Mbit and 8-Mbit SPI Flash are two of the most popular densities used and are produced by a number of

Electrolytic Capacitors Quality flowchart

Abstract: 2N440 MX26C1000B MX26C2000B MX26C4000B 4000B
Contextual Info: MACRONIX INTERNATIONAL Co., LTD. Page: 1 Taipei Office: 12F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886 02-25093300 Fax: (886) 02-25092200 Modem: (886) 02-25045679 In-System Programming of MXIC’s MTP MX26C1000B/2000B/4000B The MX26C1000B, MX26C2000B and MX26C4000B, 1Mb, 2Mb and 4Mb MTP ROM

Contextual Info: MXIC ip ^ iy Ë a iM Â i^ Y M X 2 8 F2 1 OOT 2 M - B I T 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S FLASH M E M O R Y FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current

block diagram for automatic room power control layout

Abstract: 28F2100B
Contextual Info: M X 2 8 F 2 1 OOB 2 M -B IT 2 5 6 K X 8 / 1 2 8 K X T6 CM OS FLASH M EM O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 100[iAmaximum standby current • Programming and erasing voltage 12V + 7%

Contextual Info: IW DCIC FEATURES MX29F1 61 1 16M -BIT[2M x 8 /1 M x 1 61 CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JED EC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns

X29L8000

Contextual Info: IW DCIC M X 29L8000T/B 8M-BIT [1 M x S] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Auto Page Program operation - Automatically programs and verifies data at specified addresses - Internal address and data latches for 128 bytes per page • Low power dissipation