MXIC Search Results

27C2002-12

Abstract: 27c2002
Contextual Info: MXIC MX27C2002 2 M -BIT[2 5 6 K x 8 ] CMOS EPROM FEATURES 256K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 120/150 ns Totally static operation Completely TTL compatible Operating current: 40mA Standby current: 100|aA

PHASE LOCKED LOOP

Abstract: MX8300MC Rambus clock generator
Contextual Info: MXIC ^ E O M D i/^ Y 19 M XÔ300 RAM BUS CLOCK GEN ERATOR GENERAL DESCRIPTION FEATURES The product is a clock synthesizer chip for Rambus Channel. It uses advanced Phase lock loop technology to generate desired clock. The reference clock is sup­ plied by external crystal. The FSO clock is 14 or 17

MX25L25635E

Abstract: mx25l25635 MX25L256 EN25QH256 EN25QH 32768KB MX25L25
Contextual Info: Eon Silicon Solution Inc. Application Note EON EN25QH256 vs MXIC MX25L25635E Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc.

MX25L1605D

Abstract: EN25F16 mxic mx25l1605 application 6mmx5mm
Contextual Info: Eon Silicon Solution Inc. Application Note EON EN25F16 vs MXIC MX25L1605D Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 01/11

EN29LV160BB

Abstract: EN29LV160BT MX29LV160D MX29LV160DB MX29LV160DT 2249h EN29LV160b mxic
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV160B vs MXIC Flash MX29LV160D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 2005 Eon Silicon Solution Inc. www.ession.com

smd 1gw

Abstract: 1GW smd code transistor 93C46 dip 1GW smd code smd 1gw 23 1gw 82 smd LF8200 BPA16 HSIP-002 BPA12
Contextual Info: INDEX PRELIMINARY MX98725 APPLICATION NOTE 1. INTRODUCTION The purpose of this application note is to describe the implementation of a PCI bus master 100 Base-TX Fast Ethernet node using MXIC’ highly integrated single chip Fast Ethernet NIC controller MX98725. In details, this

Contextual Info: Preliminary MX23C6411 MXIC 64M-Bit Mask ROM 8/16 Bit Output ORDER INFORMATION FEATURES • Bit organization • Fast access time • Page Size • Current • Supply voltage • Package 8M x 8 (byte mode) 4M x 16 (word mode) Random access: 120ns (max.) Page access: 50ns (max.)

Contextual Info: MXIC MX27C41 0 0 / 2 7 0 4 0 9 6 4 M -BIT 5 1 2 K x 8 / 2 5 6 K x 1 6 CM OS EPROM FEATURES 256K x 16 organization(MX27C4096, JEDEC pin out) 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

E108998

Abstract: Belden, E108998, 16 AWG CABLE E138034 CABLE E108998 MX98728EC E108998, 16 AWG CABLE 4PR24 1583a 4pr24 e108998 marking code C66 Belden, E108998 st6118
Contextual Info: PRELIMINARY MX98728EC APPLICATION NOTE 1. INTRODUCTION The purpose of this application note is to describe the Implementation of a generic bus 100Base-TX Fast Ethernet node using MXIC highly integrated single chip Fast Ethernet controller MX98728EC series. Most description in this application note applied to both

st6118

Abstract: LF8200 PT4171S crs20 NDK America MX98715A MX98715AEC-E PM0678 S558-5999-1 hsip-002
Contextual Info: PRELIMINARY MX98715AEC-E APPLICATION NOTE 1. INTRODUCTION The purpose of this application note is to describe the implementation of a PCI bus master 100 Base-TX Fast Ethernet node using MXIC’ highly integrated single chip Fast Ethernet NIC controller MX98715AEC-E. In details, this document presents product overview, programming guide, hardware design and layout recommendations that can help you to quickly and smoothly implement a Fast Ethernet adapter card.

Contextual Info: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture

Contextual Info: MXIC MX27C8000 8 M-BIT[1 M x 8] CMOS EPROM FEATURES • • • • • 1M x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 100/120/150 ns Totally static operation Completely TTL compatible Operating current: 60mA Standby current: 100|aA

Contextual Info: MXIC_ _MX25L4004 p m E iim m m y 4M-BIT[4IVI x 11 CMOS SERIAL FLASH EEPROM FEATURES • Low voltage operation: 3.0 + 0.3V • SPI Bus compatible • Sector erase architecture: -1 0 2 4 equal sectors of 536 bytes each - Sector erase time: 8ms typical

AM29F040B

Abstract: EN29F040A
Contextual Info: APPLICATION NOTE EN29F040A EN29F040A Application Note 4 Megabit 512K x 8-bit Flash Memory Uniform Sector Flash Memory, CMOS 5.0 Volt-only The EN29F040A is a high-performance 4-Megabit flash memory, which has the same features with the flash memories provided by other major vendors like SPANSION(AMD, Fujitsu), MXIC

LF8200

Abstract: 1gw 82 NDK America diode 1gw pt4171s S558-5999-15 Macronix marking resistors 1k ohm valor st6118 10/100 BASE TRANSFORMERS LAN COMPONENTS
Contextual Info: PRELIMINARY MX98715BEC APPLICATION NOTE 1. INTRODUCTION The purpose of this application note is to describe the implementation of a PCI bus master 100 Base-TX Fast Ethernet node using MXIC’ highly integrated single chip Fast Ethernet NIC controller MX98715BEC. In details,

Contextual Info: MXIC 51 2K -B ITI64K x 8 ] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • M X26C 512A 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns

Contextual Info: MXIC M X27L256 256K-BIT 32 K x 8 LOW VOLTAGE OPERATION CMOS EPROM FEATURES • • • • • • • • • 32K x 8 organization Wide Voltage range, 2.7V to 3.6V DC +12.5V programming voltage Fast access time: 120/150/200/250 ns Totally static operation

MLT 22 005

Contextual Info: P R E L IM IN A R Y MXIC M X98702 100BASE-TX PMD TRANSCEIVER FEATURE * Compatible with ANSI X3T9.5 TP-PMD draft standard * Compatible with ANSI IEEE 802.3 100 Base-T fast ethemet draft standard * Integrated trans mitter and receiver with adaptive equalizer

Contextual Info: MXIC MX23C1610 1 B M - B I T C a C FEATURES • • • • • Switchable configuration - 2M x 8 byte mode - 1M x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns (max) • Totally static operation M M x O 8 S / 1 M A M S

Contextual Info: MXIC M X 2 3 C 8 10 0 8M -B rm M x 8 / 5 1 2 K x 1 6 ] CMOS MASK ROM FEATURES • Switchable configuration - 1 M x 8 byte mode - 512K x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns (max) • Totally static operation •

Contextual Info: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture

Contextual Info: [M F Û I F â M Â T O t M MXIC M X27C81 n n 8M-BIT 1 M x 8 / 5 1 2K x 161 CMOS EPROM W ITH PAGE MODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 1M x 8 or 512Kx 16 organization +12.5V programming voltage Fast access time: 120/150 ns

Contextual Info: MXIC MX23L161Q 1BM-BIT 2M x S/1 M x 161 CMOS MASK ROM FEATURES Completely TTL compatible Operating current: 25mA Standby current: 15[iA Package - 44 pin SO P (500 mil - 48 pin TSOP GENERAL DESCRIPTION MX23L1610 offers automatic power-down, with power­ down controlled by the chip enable(CE/CE) Input. When

Contextual Info: MX23C6411 MXIC 64M-Bit Mask ROM 8/16 Bit Output ORDER INFORMATION FEATURES • Bit organization 4M x 16 (word mode) • Fast access time Part No. Access Time Page Access Time Package M X23C6411MC-12 120ns 50ns 44 pin SOP M X23C6411TC-12 120ns 50ns 48 pin TSOP