A1t smd
Abstract: 3CAQ smd code A1t
Contextual Info: CYM1622 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module F eatures F unctional D escription • High-density 1-megabit SRAM module T he CYM 1622 is a very high p erform ance 1-m egabit static R A M m odule organized as64K w ordsby 16 bits. T he m odule is con
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cym16221622h1622pv--25c+5--30c--35ca1t smd3caqsmd code a1t
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1620H
Abstract: 3545C
Contextual Info: CYM1620 p y p p p c c SEMICONDUCTOR 64K X 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The C Y M 1620 is a very high perform ance 1-m egabit static R A M m odule organized as64K w ords by 16 bits. T he m odule is con
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cym162040-pin1620pd--25c+41620h--30c--35mb3545c
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Contextual Info: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is
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puma67e1001/a-90/12thepuma67e1001/aisalmbitcmosof90andmil-std-883ord0+6mil-std-88332kx32as64kx16and128kx8puma67
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32KX8
Abstract: HD03 ZL53
Contextual Info: CYM1620 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CM OS SRAMs — Access tim e o f 20 ns The CYM1620 is a veiy high performance 1-megabit static RAM module organized
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cym162040-pin16bitsoutg-15+8ins-15cym1620pd-20ccym1620pdcym1620hdcym1620pd-30c32kx8hd03zl53
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Contextual Info: MXIC 51 2K -B ITI64K x 8 ] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • M X26C 512A 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns
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iti64k100juamx26c512a512k-bit+3as64kpm0455x26c512a
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5225M
Abstract: SOJ28
Contextual Info: LH52253 FEATURES • Fast Access Times: 20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation C M O S 64K x 4 Static R A M The LH52253 offers an Output Enable G for use in managing the Data Bus. Bus contention _during Write
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lh5225328-pin300-mil256k-bit+3as64kx5225msoj28
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sRAM 2116
Abstract: 2116 ram memory sram
Contextual Info: Q S86444, Ô Q S86449 High-Speed CMOS 64Kx4 SRAM with Separate I/O Q S86444 Q S86449 ADVANCE INFORM ATIO N F E A TU R E S /B E N E FIT S • • • • • High Speed Access and Cycle times 15ns/20ns/25ns Commercial 20ns/25ns/35ns Military TTL compatible I/O
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qs86444qs8644964kx415ns/20ns/25ns+620ns/25ns/35ns28-pinmil-std-883sram 21162116 rammemory sram
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