MU DIODE MARKING CODE Search Results

TRANSISTOR 318

Abstract: BSP 312 BSP318 MU diode MARKING CODE
Contextual Info: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223

transistor marking c y um-1

Abstract: MU MARKING CODE siemens SD 222 M BSP 229 diode marking 226
Contextual Info: SIEMENS BSP 171 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = -0.8.-2.0 V Type b -1.7 A BSP 171 VDS -60 V Type BSP 171 Ordering Code Q67000-S224 ^DS(on) Package Marking 0.35 n SOT-223

diode marking code MU

Abstract: K sc70 LM1MA142WKT1 LM1MA141WKT1 LM1MA141WKT1G LM1MA141WKT3 LM1MA141WKT3G marking code MT mu diode Diode marking CODE 5M
Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1 LM1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

transistor k 316

Abstract: Diode T 316
Contextual Info: SIEMENS BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type ^b s b ^DS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 n SOT-223 BSP 316 Type BSP 316 Ordering Code Q67000-S92 Tape and Reel Information

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

LM1MA142WKT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Diode BAY 74

Abstract: BAY74 BAV74 74 MARKING
Contextual Info: SIEM EN S Silicon Switching Diode Array BAV 74 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 74 JAs Q62702-A693 Pin Configuration Package1) 3 SOT-23 IK o CHAO7004 Maximum Ratings per Diode Parameter Symbol Values

M1MA142WKT1

Abstract: dual reverse diode
Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Q62702-A718

Abstract: BAL74 MU diode MARKING CODE diode marking code MU 591 SOT23-3
Contextual Info: SIEMENS Silicon Switching Diode BAL 74 • For high-speed switching Type Marking Ordering Code tape and reel BAL74 JCs Q62702-A718 Pin Configuration Package1) 0- « - 3 SOT-23 2 EHM0001 Maximum Ratings Parameter Symbol Values Unit

a2 marking

Abstract: Q62702-A1066 Marking Code to on semiconductor 720
Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065

diode marking code MU

Contextual Info: Schottky Barrier Diode Twin Diode Wtm OUTLINE Package : ITO-3P D30SC4M Unit-mm Weight 4.3g Typ 5.5 40V 30A Control No. • Tj=150°C • P rr sm Rating • PRRSM T ’A ' i ^ V Î ' I ' K i E • Date code Feature m w m • Tj=150°C 7 ) [Æ - J U K @ 0192

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

TV-5 18VDC

Abstract: FTR-K1CK012W FTR-K1AK028T TV-5120VAC CK005
Contextual Info: FTR-K1 SERIES POWER RELAY 1 POLE - 16A LOW PROFILE TYPE RoHS compliant FTR-K1 Series n FEATURES Low profile height: 15.7mm l HIGH ISOLATION5 Insulation Distance (between coil and contacts: 10mm min.) Dielectric strength: 5KV Surge strength: 10KV l Class F coil

Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information If Order Number / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0K& 1.0mA LND250K1 BV dsx / b v dgx 500V Idss where = 2-week alpha date code *S am e as SO T-23. All units shipped on 3,000 piece ca rrie r tape reels.

sot-23 MARKING CODE GS 5

Contextual Info: TN2124 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package Product marking for SOT-23: BVdss/ ^DS O N ^ G S (th ) BV dgs (max) (max) SOT-23 N 1C* 240V 8£2 1.8V TN2124K1 where * = 2-week alpha date code

2N7002 MARKING 712

Abstract: 2N7002 800mA SOT-23 Marking code MU
Contextual Info: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVoss / BVoos R d S<ON ' d ON) (max) (min) TO-236AB* 702* 60V 7.5Q 0.5A 2N7002 where * = 2-week alpha date code “Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

td 1410

Abstract: IRF6633TR1PBF IRF6633TRPBF diode marking code MU
Contextual Info: PD - 97122A IRF6633APbF IRF6633ATRPbF DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm)

250A DIODE

Contextual Info: PD - 97122 IRF6633APbF IRF6633ATRPbF DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm)

SOT-23 Marking code MU

Abstract: AS SOT-23 F 5 Ld SOT-23 N1T SOT23
Contextual Info: TN2130 Low Threshold Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVoss / Order Number / Package Product marking for SOT-23: RdS<ON max) ^GS(th) BVoos (max) TO-236AB* N1T* 300V 25Q 2.4V TN2130K1 where * = 2-week alpha date code

Contextual Info: PD - 97122A IRF6633APbF IRF6633ATRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses

Q62702-S654

Contextual Info: SIEMENS BSP 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • V GS th = 1 . 5 . . . 2 . 5 V Type Vos h BSP 125 600 V 0.12 A Type BSP 125 BSP 125 Ordering Code Q62702-S654 Q67000-S284 ffDS(on) 45 Q Package Marking SOT-223 BSP 125

Contextual Info: SIEMENS BSP 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type Vqs h BSP 297 200 V 0.65 A Type BSP 297 Ordering Code Q67000-S068 ^DS(on) Package Marking 2Q SOT-223 BSP 297 Tape and Reel Information

SOT-23 Product Code bss123

Abstract: DSS SOT23 marking 9a sot-23
Contextual Info: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code