MTP75N05HD equivalent
Abstract: MTP75N05HD AN569
Contextual Info: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for
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MTP75N05HD
Abstract: AN569 mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET Power Field Effect Transistor Designer's MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 9.5 mΩ
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mtp75n05hd/dmtp75n05hdan569mosfet transistor 400 volts.100 amperes |
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mtp75n05hd
Abstract: mosfet transistor 400 volts.100 amperes
Contextual Info: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy−efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
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mtp75n05hdo-220r14525mtp75n05hd/d+1mosfet transistor 400 volts.100 amperes
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AN569
Abstract: MTP75N05HD mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ This advanced high–cell density HDTMOS E–FET is designed to
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mtp75n05hd/dmtp75n05hdan569mosfet transistor 400 volts.100 amperes |
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AN569
Abstract: MTP75N05HD mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ
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mtp75n05hd/dmtp75n05hdan569mosfet transistor 400 volts.100 amperes |
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MTP75N05HD
Abstract: MTP75N05 AN569 mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ This advanced high–cell density HDTMOS E–FET is designed to
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mtp75n05hd/dmtp75n05hdmtp75n05an569+1mosfet transistor 400 volts.100 amperes
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tp75n05hd
Contextual Info: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA M TP75N 05H D HDTMOS E-FET Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HDTMOS E-FET is designed to
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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sg379/d1n965brlzen15v1n751as+151n967brlzen18v1n751asrl1n968brlzen20vmc68b21cpxcm916x1cth16transistor marking code 12w sot-23sg379mc68b54pxc68hc805p18cdwmc68b50cpmc2830ne555nchn ne555n
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mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
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mosfet cross referencepower mosfet cross reference guide2sk2146cross reference power mosfet+6sup60no6-18mosfet toshiba 2skirf510 motorolasup70no6stp16neo6irf540 substitution
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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bap1321-02bap65-05bap65-03bap65-05w+16bap65-02bap63-03bap63-02bap64-03bap64-02bb143bc548 transistor replacementtyn612 pin diagram1n4007 smd, toshibas0817mhtyn604 scr pin diagramkmz51 compasstransistor s1a 64 smdtoshiba l 300 laptop motherboard circuit diagramjfet transistor replacement guide j201replacements for transistor nec d 587
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mgb20n40cl
Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to
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smalles40fmgp5n60emgp20n60mgw20n60d+15mgw30n60mgy30n60dmgy40n60mgy40n60dmgw12n120mgw12n120dmgb20n40clmgb20n40mgb20n35clmtd1n60e1motorola automotive transistor coil ignitionmtsf3n03hdmotorola master selection guidemtd20n06hdmtd20n06v
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irf44z
Abstract: 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics
Contextual Info: AN1520/D HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications http://onsemi.com Prepared by: Scott Deuty, Applications Engineer APPLICATION NOTE INTRODUCTION A new technology, HDTMOS, was recently introduced which addresses the needs of today’s power transistor users.
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an1520/dr14525irf44z3525 pwm+8mosfet and parallel schottky diodeic 3525 pwm application dc to dc converterfluke 79 manual5n03ic 3525 pwm applicationirfz44 datamtp75n03hdlcoiltronics
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transistor marking code 12W SOT-23
Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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sg388/daug-1999r14153transistor marking code 12w sot-23+9mgb20n40cllaptop charging crbkp series stepper motor japan servo co2n3773 power amplifier circuit diagramsmj2955 transistorpwm brush dc motor controller sg3526sg3526 boostcontroller for pwm fan tl494tip122 tip127 mosfet audio amp
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power tmos
Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
Contextual Info: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003 SCILLC, 2003 Previous Edition 2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
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aug-2003power tmos936gpr 751s+7k1 mark 6pin sot-363carrier chillermc10116mc10h210mmsf5n03hd0j sod-523caserm
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IRFZ44N complementary
Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Contextual Info: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55
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buk7508-55buk7514-55abuk7524-55abuk7530-55a+15buk7570-55abuz100sbuz102sbuz110sbuz111sirf1010nirfz44n complementaryirf3205 complementaryirf3205 applicationa/surface mount irfz44nnbp6060irf3205 to-220philips 435-2hrf3205harris 4365
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1W4148
Abstract: SMP40P06
Contextual Info: f T l K f t L LTC1159/LTC1159-3.3/LTC1159-5 TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators FEATURES DCSCRIPTIOil • Operation from 4V to 40V Input Voltage ■ Ultra-High Efficiency: Up to 95% ■ 20jiiA Supply Current in Shutdown The LTC 1159 series is afamily of synchronous step-down
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CS5170
Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Contextual Info: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .
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IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional
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device2176r14153cr108/dirf9310+9mosfet cross referencekorea irfz44irf 949replacement buz 36philips master replacement guide2sk2146irf540 substitutionmosfet toshiba 2skirf510 substitution
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N-Channel JFET FETs
Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
Contextual Info: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are
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std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232
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2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158std2n52stp2na60buz102 equivalentssh6n80rfp60n06replacement for irl2203nbuz91 equivalentrfp60n06leirfp460 cross referencebuz91a equivalent
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carrier chiller
Abstract: BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook
Contextual Info: CASERM/D Rev. 0, Sep-2000 Semiconductor Packaging and Case Outlines ON Semiconductor Reference Manual and Design Guide Semiconductor Packaging and Case Outlines Reference Manual and Design Guide CASERM/D Rev. 0, Sep–2000 SCILLC, 2000 “All Rights Reserved’’
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sep-2000r14525carrier chillerbridge rectifier smd+8oscilloscopes manualsot-353 mark vaecl handbooksmd diode cathode is indicated by a blue band marto-204aa microsemi package outlinemicrosemi catalog 2000rca 559 to3mecl system design handbook
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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