5N03 Search Results
5N03 Datasheets (19)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VSD005N03MS
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VANGUARD | 30V/105A N-Channel Advanced Power MOSFET with low on-resistance of 3 mΩ at VGS=10V, available in TO-252 package, suitable for high-efficiency power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB75N03U
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JCET Group | N-Channel Power MOSFET CJAB75N03U with 30V drain-source voltage, 75A continuous drain current, and low RDS(on) of 2.2mΩ at 10V, designed for high-density applications requiring efficient power switching. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB55N03S
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JCET Group | N-Channel Power MOSFET CJAB55N03S with 30V drain-source voltage, 55A continuous drain current, 3.8mΩ RDS(on) at 10V VGS, and 5.9mΩ at 4.5V VGS, housed in a PDFNWB3.3×3.3-8L package for high-density switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB35N03S
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JCET Group | N-Channel Power MOSFET CJAB35N03S with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 5.2mΩ at 10V gate-source voltage, housed in a 3x3.3mm PDFN package for high-density switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AKZE45N03
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AK Semiconductor | N-Channel 30-V MOSFET with 0.007 ohm RDS(on) at VGS = 10 V, 25 nC gate charge, 40 A continuous drain current, TO-252 package, suitable for DC/DC conversion and OR-ing applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSE2R5N03MS
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VANGUARD | 30V/48A N-Channel Advanced Power MOSFET with 2.7 mΩ typical RDS(on) at VGS=10V, available in PDFN3333 package, designed for high-efficiency power applications requiring low conduction losses and high current handling. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTV075N03A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 22A N-channel Enhancement Mode Power MOSFET in DFN2020-6L package with RDS(ON) less than 8.1mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AKZE15N03
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AK Semiconductor | N-Channel 30-V MOSFET with 0.007 ohm RDS(on) at VGS = 10 V, 25 nC gate charge, 40 A continuous drain current, and TO-252 package, suitable for DC/DC conversion and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSE005N03MS
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VANGUARD | 30V/78A N-Channel Advanced Power MOSFET with 2.8 mΩ RDS(on) at VGS=10V, 4.2 mΩ at VGS=4.5V, available in PDFN3333 package, featuring high pulse current capability and low gate charge for fast switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HSBA005N03
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Huashuo Semiconductor | N-Ch 30V Fast Switching MOSFET with 197A continuous drain current, 0.5 mΩ RDS(ON), 35W power dissipation, and 175°C maximum junction temperature, suitable for motor drivers and DC/DC converters. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTP045N03A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 20A N-channel enhancement mode MOSFET in SOP-8 package with RDS(on) less than 6mΩ at VGS=10V and 8.6mΩ at VGS=4.5V, featuring advanced trench technology for power management and load switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB35N03
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JCET Group | CJAB35N03 N-Channel Power MOSFET with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 7mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency and thermal performance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB25N03
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JCET Group | N-Channel Power MOSFET CJAB25N03 with 30V drain-source voltage, 25A continuous drain current, and ultra-low on-resistance of 10mΩ at 10V gate-source voltage, designed for high-density switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAC35N03
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JCET Group | N-Channel Power MOSFET CJA35N03 with 30V drain-source voltage, 35A continuous drain current, 7mΩ typical RDS(on) at 10V VGS, advanced trench technology for low gate charge and excellent on-state resistance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CJAB55N03
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JCET Group | N-Channel Power MOSFET CJAB55N03 with 30V drain-source voltage, 55A continuous drain current, and low RDS(on) of 5.5mΩ at 10V, designed for high-density applications requiring efficient switching and power management. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HKTQ65N03
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Shenzhen Heketai Electronics Co Ltd | HKTQ65N03 N-channel MOSFET with 30V drain-source voltage, 65A continuous drain current, and 5mΩ on-resistance at 10V gate-source voltage, housed in a surface-mount PDFN3333 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTQ075N03D
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 25A N-channel Enhancement Mode Power MOSFET with RDS(ON) < 11.8mΩ at VGS = 10V, available in PDFN3x3-8L-D package, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSP005N03MS
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VANGUARD | 30V/105A N-Channel Advanced Power MOSFET with RDSon of 2.7 mOhm at VGS=10V, available in PDFN5x6 package, featuring high pulse current capability and low gate charge for fast switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SLN25N03T
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Maplesemi | 30V N-Channel Power MOSFET with 25A continuous drain current, RDS(on) of 7.6mΩ at VGS = 10V, housed in a DFN3*3 package, designed for PWM, load switch, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
5N03 Price and Stock
ROHM Semiconductor RTL035N03FRATRMOSFET N-CH 30V 3.5A TUMT6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RTL035N03FRATR | Digi-Reel | 7,800 | 1 |
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Buy Now | |||||
ROHM Semiconductor RTL035N03TRMOSFET N-CH 30V 3.5A TUMT6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RTL035N03TR | Cut Tape | 6,840 | 1 |
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Buy Now | |||||
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RTL035N03TR | Reel | 33,000 | 3,000 |
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Buy Now | |||||
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RTL035N03TR | 100 | 1 |
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Buy Now | ||||||
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RTL035N03TR | 19 Weeks | 3,000 |
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Buy Now | ||||||
Infineon Technologies AG IPD075N03LGATMA1MOSFET N-CH 30V 50A TO252-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD075N03LGATMA1 | Tape & Reel | 5,000 | 2,500 |
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Buy Now | |||||
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IPD075N03LGATMA1 | Cut Tape | 5 | 1 |
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Buy Now | |||||
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IPD075N03LGATMA1 | 9 Weeks | 2,500 |
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Buy Now | ||||||
ROHM Semiconductor RXL035N03TCRNCH 30V 3..5A SMALL SIGNAL MOSFE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RXL035N03TCR | Cut Tape | 2,900 | 1 |
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Buy Now | |||||
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RXL035N03TCR | 5,870 |
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Buy Now | |||||||
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RXL035N03TCR | Reel | 3,000 |
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Buy Now | ||||||
Essentra Components 50M080125N030MACH SCREW PAN SLOTTED M8X1.25 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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50M080125N030 | Bulk | 300 | 1 |
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Buy Now | |||||
5N03 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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s41 hall effect sensor s41
Abstract: sensor sr21 datalogic DATA SENSOR TLU-015 D50NK LASER ILLUMINATOR hall effect sensor s41
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Original |
4-20mA s41 hall effect sensor s41 sensor sr21 datalogic DATA SENSOR TLU-015 D50NK LASER ILLUMINATOR hall effect sensor s41 | |
irf44z
Abstract: 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics
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AN1520/D r14525 irf44z 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics | |
TAG 503
Abstract: sd-2629
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OCR Scan |
U6I508 U8I80I SD-2629-Â 36iprebent TAG 503 sd-2629 | |
irf44z
Abstract: 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent
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AN1520/D AN1520 AN1520/D* irf44z 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent | |
XC26
Abstract: PB28 PB30 PD10
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OCR Scan |
nce/ygir/8xx/fgds/d-brd/850/pilot/scH/1 PB16/L1ST4 PB17/LCD-C PB19/LCD-B PB22/SDK2 PB23/S0K1 PB24/L5B~ MPC850FADSDB XC26 PB28 PB30 PD10 |