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    5N03 Search Results

    5N03 Datasheets (19)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge VSD005N03MS
    		VANGUARD 30V/105A N-Channel Advanced Power MOSFET with low on-resistance of 3 mΩ at VGS=10V, available in TO-252 package, suitable for high-efficiency power applications. Original PDF
    badge CJAB55N03S
    		JCET Group N-Channel Power MOSFET CJAB55N03S with 30V drain-source voltage, 55A continuous drain current, 3.8mΩ RDS(on) at 10V VGS, and 5.9mΩ at 4.5V VGS, housed in a PDFNWB3.3×3.3-8L package for high-density switching applications. Original PDF
    badge CJAB75N03U
    		JCET Group N-Channel Power MOSFET CJAB75N03U with 30V drain-source voltage, 75A continuous drain current, and low RDS(on) of 2.2mΩ at 10V, designed for high-density applications requiring efficient power switching. Original PDF
    badge CJAB35N03S
    		JCET Group N-Channel Power MOSFET CJAB35N03S with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 5.2mΩ at 10V gate-source voltage, housed in a 3x3.3mm PDFN package for high-density switching applications. Original PDF
    badge JMTV075N03A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 22A N-channel Enhancement Mode Power MOSFET in DFN2020-6L package with RDS(ON) less than 8.1mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. Original PDF
    badge VSE2R5N03MS
    		VANGUARD 30V/48A N-Channel Advanced Power MOSFET with 2.7 mΩ typical RDS(on) at VGS=10V, available in PDFN3333 package, designed for high-efficiency power applications requiring low conduction losses and high current handling. Original PDF
    badge AKZE15N03
    		AK Semiconductor N-Channel 30-V MOSFET with 0.007 ohm RDS(on) at VGS = 10 V, 25 nC gate charge, 40 A continuous drain current, and TO-252 package, suitable for DC/DC conversion and power management applications. Original PDF
    badge VSE005N03MS
    		VANGUARD 30V/78A N-Channel Advanced Power MOSFET with 2.8 mΩ RDS(on) at VGS=10V, 4.2 mΩ at VGS=4.5V, available in PDFN3333 package, featuring high pulse current capability and low gate charge for fast switching applications. Original PDF
    badge AKZE45N03
    		AK Semiconductor N-Channel 30-V MOSFET with 0.007 ohm RDS(on) at VGS = 10 V, 25 nC gate charge, 40 A continuous drain current, TO-252 package, suitable for DC/DC conversion and OR-ing applications. Original PDF
    badge JMTQ075N03D
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 25A N-channel Enhancement Mode Power MOSFET with RDS(ON) < 11.8mΩ at VGS = 10V, available in PDFN3x3-8L-D package, suitable for load switch, PWM, and power management applications. Original PDF
    badge HKTQ65N03
    		Shenzhen Heketai Electronics Co Ltd HKTQ65N03 N-channel MOSFET with 30V drain-source voltage, 65A continuous drain current, and 5mΩ on-resistance at 10V gate-source voltage, housed in a surface-mount PDFN3333 package. Original PDF
    badge VSP005N03MS
    		VANGUARD 30V/105A N-Channel Advanced Power MOSFET with RDSon of 2.7 mOhm at VGS=10V, available in PDFN5x6 package, featuring high pulse current capability and low gate charge for fast switching applications. Original PDF
    badge CJAB55N03
    		JCET Group N-Channel Power MOSFET CJAB55N03 with 30V drain-source voltage, 55A continuous drain current, and low RDS(on) of 5.5mΩ at 10V, designed for high-density applications requiring efficient switching and power management. Original PDF
    badge HSBA005N03
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 197A continuous drain current, 0.5 mΩ RDS(ON), 35W power dissipation, and 175°C maximum junction temperature, suitable for motor drivers and DC/DC converters. Original PDF
    badge CJAC35N03
    		JCET Group N-Channel Power MOSFET CJA35N03 with 30V drain-source voltage, 35A continuous drain current, 7mΩ typical RDS(on) at 10V VGS, advanced trench technology for low gate charge and excellent on-state resistance. Original PDF
    badge CJAB25N03
    		JCET Group N-Channel Power MOSFET CJAB25N03 with 30V drain-source voltage, 25A continuous drain current, and ultra-low on-resistance of 10mΩ at 10V gate-source voltage, designed for high-density switching applications. Original PDF
    badge JMTP045N03A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 20A N-channel enhancement mode MOSFET in SOP-8 package with RDS(on) less than 6mΩ at VGS=10V and 8.6mΩ at VGS=4.5V, featuring advanced trench technology for power management and load switching applications. Original PDF
    badge CJAB35N03
    		JCET Group CJAB35N03 N-Channel Power MOSFET with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 7mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency and thermal performance. Original PDF
    badge SLN25N03T
    		Maplesemi 30V N-Channel Power MOSFET with 25A continuous drain current, RDS(on) of 7.6mΩ at VGS = 10V, housed in a DFN3*3 package, designed for PWM, load switch, and power management applications. Original PDF
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    5N03 Price and Stock

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    Infineon Technologies AG ISC015N03LF2SATMA1

    ISC015N03LF2SATMA1
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    Infineon Technologies AG IAUC120N06S5N032ATMA1

    MOSFET_)40V 60V)
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    DigiKey () IAUC120N06S5N032ATMA1 Digi-Reel 4,357 1
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    Rochester Electronics IAUC120N06S5N032ATMA1 35,907 1
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    EBV Elektronik IAUC120N06S5N032ATMA1 27 Weeks 5,000
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    Infineon Technologies AG IQDH35N03LM5CGATMA1

    OPTIMOS 6 POWER-TRANSISTOR
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    DigiKey () IQDH35N03LM5CGATMA1 Digi-Reel 3,672 1
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    IQDH35N03LM5CGATMA1 Cut Tape 3,672 1
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    IQDH35N03LM5CGATMA1 Tape & Reel 850 5,000
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    Newark IQDH35N03LM5CGATMA1 Cut Tape 5,000 1
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    ROHM Semiconductor RXL035N03TCR

    NCH 30V 3..5A SMALL SIGNAL MOSFE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () RXL035N03TCR Digi-Reel 2,900 1
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    RXL035N03TCR Cut Tape 2,900 1
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    Mouser Electronics RXL035N03TCR 5,870
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    TTI RXL035N03TCR Reel 3,000
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    onsemi NTMFS0D55N03CGT1G

    WIDE SOA
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    DigiKey NTMFS0D55N03CGT1G Cut Tape 880 1
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    Richardson RFPD NTMFS0D55N03CGT1G 1,500
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    Avnet Silica NTMFS0D55N03CGT1G 28 Weeks 1,500
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    Flip Electronics NTMFS0D55N03CGT1G 10,500
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    Wuhan P&S NTMFS0D55N03CGT1G 1,828 1
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    Find more 5N03 price and stock on Findchips.com

    5N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    s41 hall effect sensor s41

    Abstract: sensor sr21 datalogic DATA SENSOR TLU-015 D50NK LASER ILLUMINATOR hall effect sensor s41
    Contextual Info: SENSORS, SAFETY & MEASUREMENT Short Form Catalogue 2014 I 2015 www.acdc.co.za PRODUCT PICTURE OUTPUT SPECIFICATIONS PAGE • 3 Wire VDC PNP NO-NC, NPN NO-NC 1 • 2 Wire VDC NO-NC 1 • 2 Wire VAC NO-NC 1 • Terminal Block VDC PNP NO-NC, NPN NO-NC 2 • 2 Wire VAC/VDC NO, NC


    Original     		4-20mA s41 hall effect sensor s41 sensor sr21 datalogic DATA SENSOR TLU-015 D50NK LASER ILLUMINATOR hall effect sensor s41 PDF

    irf44z

    Abstract: 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics
    Contextual Info: AN1520/D HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications http://onsemi.com Prepared by: Scott Deuty, Applications Engineer APPLICATION NOTE INTRODUCTION A new technology, HDTMOS, was recently introduced which addresses the needs of today’s power transistor users.


    Original     		AN1520/D r14525 irf44z 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics PDF

    TAG 503

    Abstract: sd-2629
    Contextual Info: 2629 12 PLUG II ENG NO PRELIMINARY 10 9 8 7 6 1 2629 3 1 2 LEGENDs RECEPTACLE ENG NO 2629-* PRELIMINARY I T Y P E :-P = PLUG R = RECEPTACLE PLUG FEATURES: -BLANK = WITH PREBENT EARS I = WITHOUT EARS


    OCR Scan     		U6I508 U8I80I SD-2629-Â 36iprebent TAG 503 sd-2629 PDF

    irf44z

    Abstract: 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent
    Contextual Info: MOTOROLA Order this document by AN1520/D SEMICONDUCTOR APPLICATION NOTE AN1520 HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications Prepared by: Scott Deuty, Applications Engineer Motorola Inc. A new technology, HDTMOS, was recently introduced


    Original     		AN1520/D AN1520 AN1520/D* irf44z 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent PDF

    XC26

    Abstract: PB28 PB30 PD10
    Contextual Info: Cm ho > > D S D I, D S C K , D S [ lO, cn rM S JR S T~ 00 if A6 o A7 M13 A6 N15 A8 N 16 A9 M15 A10 L13 A11 M 16 A12 M14 L14 A13 tA 14 K13 G13 K 15 A20 A21 J 15 J 14 A22 G14 H 15 A27 K16 A28 G 16 A29 H 16 A30 G 15 A31 F 16 s \ s \ | \ i \ i \ | \ \ \ p i s


    OCR Scan     		nce/ygir/8xx/fgds/d-brd/850/pilot/scH/1 PB16/L1ST4 PB17/LCD-C PB19/LCD-B PB22/SDK2 PB23/S0K1 PB24/L5B~ MPC850FADSDB XC26 PB28 PB30 PD10 PDF