MTP50N06 Search Results

Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

Contextual Info: io ducta., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP50N06V TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TP50N

Abstract: 06vl
Contextual Info: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP50N06VL TMOS V Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0-032 OHM

Contextual Info: MTP50N06E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D)38 @Temp (øC)100# IDM Max (@25øC Amb)160 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

MTP50N06V

Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor MTP50N06V FEATURES •Drain Current –ID=42A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) DESCRIPTION ·Designed for low voltage, high speed switching applications in

AN569

Abstract: MTP50N06V
Contextual Info: MTP50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: MTP50N06EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)

Contextual Info: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50N06VL TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

MTP50N06EL

Abstract: AN569
Contextual Info: MOTOROLA Order this document by MTP50N06EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP50N06EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high

AN569

Abstract: MTP50N06V
Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM

TMOS E-FET

Abstract: AN569 MTP50N06VL
Contextual Info: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP50N06VL TMOS V Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.032 OHM

AN569

Abstract: MTP50N06V 221A-06
Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM

Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM

MTP50N06VL

Abstract: mtp5 AN569
Contextual Info: MTP50N06VL Preferred Device Power MOSFET 42 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: MTP50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MOTOROLA POWER TRANSISTOR

Abstract: working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569
Contextual Info: by'ANI 083/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1083 Basic Thermal Management of Power Semiconductors BY AL PSHAENICH MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR Thermal management of power semiconductors is often overlooked by design engineers, either through oversight,

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

mosfet 4800

Abstract: K1432 MTP50N06 4800 mosfet AN MOSFET 2N2222 MC33091A MC33198 MC33198D
Contextual Info: MOTOROLA MC33198 SEMICONDUCTOR HIGH SIDE TMOS DRIVER Automotive High Side TMOS Driver SILICON MONOLITHIC INTEGRATED CIRCUIT The MC33198D is a high side TMOS driver, dedicated for automotive applications. It is used in conjunction with an external power MOSFET for high

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

Contextual Info: Order this document by MC33091A/D MC33091A Advance Information High-Side TMOS Driver The MC33091A is a High–Side TMOS Driver designed for use in harsh automotive switching applications requiring the capability of handling high voltages attributed to load and field dump transients, as well as reverse and

mosfet 4800

Abstract: pin diagram of MOSFET 4800 mosfet MC33091A 2N2222 MC33198 MC33198D MTP50N06 Application Report mosfet diagram Freescale System
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MOTOROLA MC33198 SEMICONDUCTOR HIGH SIDE TMOS DRIVER Automotive High Side TMOS Driver SILICON MONOLITHIC INTEGRATED CIRCUIT The MC33198D is a high side TMOS driver, dedicated for automotive applications. It is used in conjunction with an external power MOSFET for high

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction