MTP5 Search Results

MTP55N06Z

Abstract: TMOS E-FET
Contextual Info: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to

MTPSP25

Contextual Info: MOTOROLA SC ÎXSTRS/R F> bôE • b3b?2SM 0 m a b 7 e1 S 4 3 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP5P25 Advance Information P o w er Field E ffe c t T ran sisto r P-Channel Enhancement-Mode Silicon Gate If This TMOS Power FET is designed for medium voltage,

TP52N06V

Contextual Info: MOTOROLA Order this document by MTP52N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP52N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This

NJU7026

Abstract: NJU7026F NJU7026F3 SC88A
Contextual Info: NJU7026 Small Package, 13 A, Rail-to-Rail Output Single CMOS Operational Amplifier • PACKAGE OUTLINE ■ GENERAL DESCRIPTION The NJU7026 is a low power, single CMOS operational amplifier available in small packages, SC88A and MTP5. The NJU7026 can operate from a single-supply voltage of +1.8V to +5.5V. In addition, this

TMOS E-FET

Abstract: MTP55N10EL
Contextual Info: MOTOROLA Order this document by MTP55N10EL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP55N10EL TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 100 VOLTS RDS on = 0.026 W This advanced TMOS E–FET is designed to withstand high

Contextual Info: MOTOROLA Order this document by MTP52N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP52N06VL TMOS V™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This

Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

mtp5

Contextual Info: パッケージ外形図 MTP5 2.9±0.2 0°~15° 2 2.8±0.2 3 0.95±0.1 +0.1 0.1-0.03 1.1±0.1 0.6MAX 0.4±0.1 0.1 0.1M AX 1 0.6 4 +0.2 1.6 - 0.1 5 0.2M IN 1.9±0.2 単位 : mm

NJM022

Abstract: DMP8 Package HJMZ130F NJM2130 NJM2130F
Contextual Info: NJM2130F LOW POWER SINGLE OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION ■ PACKAGE OUTLINE The NJM2130 is a general purpose low power single operational a m p lifie r. The features o f low power, low operating voltage, and ultra mini package MTP5 are most suitable for portable items.

mtp5n40

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP5N40 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage

mtp5

Contextual Info: PACKAGE DIMENSIONS MTP5 2.9±0.2 0°~15° 2 2.8±0.2 3 0.95±0.1 +0.1 0.1-0.03 1.1±0.1 0.6MAX 0.4±0.1 0.1 0.1M AX 1 0.6 4 +0.2 1.6 - 0.1 5 0.2M IN 1.9±0.2 UNIT : mm

TP55N

Contextual Info: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high vo ltag e TMOS E -F E T is designed to withstand high energy in the avalanche mode and switch efficiently.

Contextual Info: io ducta., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP50N06V TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

Contextual Info: NJM2505A SINGLE ISOLATION AMPLIFIER p GENERAL DESCRIPTION NJM2505A is the single isolation amplifier developed by the video signal. It can remove the noise of a signal with isolation amplifier and carries in the small package MTP5 , it is suitable for the interface

TMOS E-FET

Abstract: AN569 MTP5P06V 612 Mosfet MOTOROLA
Contextual Info: MOTOROLA Order this document by MTP5P06V/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP5P06V TMOS V Power Field Effect Transistor Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 5 AMPERES 60 VOLTS RDS on = 0.450 OHM

NJM2505

Contextual Info: NJM2505 SYNGLE ISOLATION AMPLIFIER • GENERAL DESCRIPTION NJM2505 is the single isolation amplifier developed by the video signal. It can remove the noise of a signal with isolation amplifier and carries in the small package MTP5 , it is suitable for the interface

mtp5n12

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP5N12 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FET 5 AMPERES rDS on = °-9 OHM 120 VOLTS T his TM O S Pow er FET is designed fo r high speed p o w e r s w itc h ­

TP50N

Abstract: 06vl
Contextual Info: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP50N06VL TMOS V Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0-032 OHM

4156N

Contextual Info: NJM2130F LOW POWER SIN6LE OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE The NJM2130 is a general purpose low power single operational amplifier. The features of low power, low operating voltage, and ultra mini package MTP5 are most suitable for portable items.

Contextual Info: MTP50N06E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D)38 @Temp (øC)100# IDM Max (@25øC Amb)160 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

MTP50N05EL

Contextual Info: MTP50N05EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)15 I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)

NJM2505

Contextual Info: NJM2505 SYNGLE ISOLATION AMPLIFIER • GENERAL DESCRIPTION NJM2505 is the single isolation amplifier developed by the video signal. It can remove the noise of a signal with isolation amplifier and carries in the small package MTP5 , it is suitable for the interface

Contextual Info: NJM2874/75/76 低飽和型レギュレータ •概 要 NJM2874/75/76はバイポーラプロセスを使用しローノイズ、 高リップル除去比を実現した低飽和型レギュレータです。 MTP5の小型パッケージに搭載し、出力電流150mA、小型1.0µF

MTP50N06V

Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor MTP50N06V FEATURES •Drain Current –ID=42A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) DESCRIPTION ·Designed for low voltage, high speed switching applications in