MTP14 Search Results

BUZ71L

Abstract: BUZ-71L T39 diode S3848 Z71L
Contextual Info: MOTOROLA SC XSTRS/R F (□3b7254 5bE.D Q D T C HC m b Order this data sheet by BUZ71L/D MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA BU Z71L MTP14IM05L Pow er Field Effect Transistor IM-Channel Enhancem ent-Mode Silico n Gate These T M O S Pow er FETs are designed for low voltage,

Contextual Info: MOTOROLA Order this document by MTP14N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP14N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.160 OHM This advanced TMOS E–FET is designed to withstand high

MTP1403

Abstract: MTP14
Contextual Info: CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP1403BQ8 BVDSS ID RDSON max -30V -12A 14mΩ Description The MTP1403BQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TLS2271

Abstract: 32H6742 schematic diagram of seagate hard disk pcb tls2270 TLS2247 TLS2251 TLS2245 1575R SP4107A 32H6910
Contextual Info: TABLE OF CONTENTS How to use the Data CD-ROM Texas Instruments Storage Products Overview Alpha/Numeric Index 2000 Short Form Catalog Discontinued Parts List DSP and ASIC Quality and Technology HDD Read/Write Amplifiers MR Head Read/Write Thin-Film Head Read/Write

pdcr 921

Abstract: 34P3210 floppy read write amplifier "tape storage"
Contextual Info: A I ABRIDGED VERSION wim sifskm s A TDK G roup/Company SSI 34P3210 Read Channel for High Density Floppy and Tape Storage Advance information February 1996 DESCRIPTION FEATURES The SSI 34P3210 is a high performance BiCMOS single chip read channel IC for high density floppy or

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

mtp25n06

Abstract: MTP12P05 MTP3055A MTP14N05A BUZ11 motorola MTP15N06 BUZ11 MTP5N05 T0-225AA MTP15N05
Contextual Info: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — T0-220AB (continued) C A S E 221A-02 VBR(DSS) (Volts) Min (Ohms) Max (Amp) 60 0.4 4 F'D @ TC = 25°C (Watts) Max IRF523 7 40 IRF521 8 Device 0.3 6 MTP12P06* 12 0.28 5 MTP10N06 10

Contextual Info: SSI 34P3210 c é m M k t n s Read Channel for High Density Floppy and Tape Storage ' A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES Complete zoned recording application support The SSI 34P3210 is a high performance BiCMOS single chip read channel IC that contains all the

MTP3055A

Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08

Contextual Info: SSI 34P3400 ¿ ik o n s y s te m 30 Mbit/s Read Channel w/Adaptive Threshold Qualifier s A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 34P3400 device is a high performance BiCMOS single chip read channel 1C that contains all

38dec

Abstract: 34P3400
Contextual Info: SSI 34P3400 ¿ ilr n s y s te m 30 Mbit/s Read Channel w/Adaptive Threshold Qualifier s A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 34P3400 device is a high performance BiCMOS single chip read channel 1C that contains all

philips ecg master replacement guide

Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
Contextual Info: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW

34P3210

Abstract: PDCR 830 "tape storage"
Contextual Info: SSI 34P3210 ¿ im M k tn Read Channel for High Density Floppy and Tape Storage s A TDK G roup/C om pany Advance Information January 1995 DESCRIPTION FEATURES The SSI 34P3210 is a high performance BiCMOS single chip read channel IC that contains all the functions needed to implement a complete zoned

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

mtp15n06

Abstract: MTP12P05 mtp25n06 MTP3055A MTP14N05A BUZ10 MTP12p06 MTA6N10 T0-225AA MTP2P50
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40