MT-72 PACKAGE Search Results

Contextual Info: 17E » • 72^fl7L,4 DDDD347 3 POUERTECH INC "BIG IDEAS IN BIG POWER" ■ H ^ ■ PowerTech 1200 AMPERES MT-500B MT-5007 POWERBLOCK POWER SYSTEM MAXIMUM RATINGS SYMBOL Collector-Base Voltage MT-5006 MT-5007 60V 80V 60V 80V 10V 10V V CBO Collector-Emitter Voltage

Contextual Info: CY7C4021KV13/CY7C4041KV13 72-Mbit QDR -IV HP SRAM 72-Mbit QDR™-IV HP SRAM Features • Configurations 72-Mbit density 4 M x 18, 2 M × 36 [1] CY7C4021KV13 – 4 M × 18 ■ Total Random Transaction Rate of 1334 MT/s ■ Maximum operating frequency of 667 MHz

Contextual Info: CY7C4021KV13/CY7C4041KV13 72-Mbit QDR -IV HP SRAM 72-Mbit QDR™-IV HP SRAM Features • Configurations 72-Mbit density 4 M x 18, 2 M × 36 [1] CY7C4021KV13 – 4 M × 18 ■ Total Random Transaction Rate of 1334 MT/s ■ Maximum operating frequency of 667 MHz

Contextual Info: CY7C4022KV13/CY7C4042KV13 72-Mbit QDR -IV XP SRAM 72-Mbit QDR™-IV XP SRAM Features • Configurations 72-Mbit density 4 M x 18, 2 M × 36 [1] CY7C4022KV13 – 4 M × 18 ■ Total Random Transaction Rate of 2132 MT/s ■ Maximum operating frequency of 1066 MHz

Contextual Info: 17E D m 72^â7bM □□DGBSG POüJERTECH INC 3 " BIG POWER" “BIG IDEAS IN H • PowerTech / 150 AMPERES MT-6011 -P 3 3 > -Z < > \ POWERBLOCK POWER SYSTEM SYMBOL MT-6011 Col lector-Base Voltage VCBO 650V Collector-Emitter Voltage VCE 600V Emitter-Base Voltage

rf power transistors

Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
Contextual Info: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60

marking code MOG 8

Contextual Info: ADVANCE 2, 4 MEG X 72 SDRAM DIMMs m ic r o n I TEC H N O LO G Y, M C. SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT 18LSD(T)472A FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Utilizes 83 and 100 MHz SDRAM components

4 Pin SMD Hall sensors

Abstract: MLX90215EVA-ND SMD Hall sensors linear D smd transistor 3l US1881LSETR-NDNEW US1881LSETR-ND US4881EUA-ND SMD Hall sensors linear US5881LUA SMD-540
Contextual Info: NEW! Fig. Package Semiconductor Peak Wave- Bandwidth length nm (nm) Photo Current Standard Typ. (µA) Dimensions in mm Ambient Light Sensors View Angle (°) 1 0805 SMD 550 450 ~ 610 12 120 1206 SMD 540 430 ~ 610 0.04 120 2 1206 SMD 570 360 ~ 970 50 120 3

2904 SMD IC

Abstract: SMD m7 spice model diode electret condenser microphone preamplifier LMC662 equivalent spice model smd transistor m6 LM397 h LM6142 model SPICE LM146 LM614 8 pin lmc6762
Contextual Info: Precision, low voltage, low power amplifier and comparator products Selection guide Winter 2004 RF detection and power loop control Part number Operating voltage range [V] Supply current typ. [mA] Input frequency range [GHz] Slew Band- Detection Detection Output Shut- Number Package Temp

RTU A08

Abstract: RTU A01 BUS-66300 bus-65112 BUS-65600 bus-66312 smd code A04 tpw14 A07 smd smd code A06
Contextual Info: CT2566 MIL-STD-1553 to Microprocessor Interface Unit Features A E RO www.aeroflex.com C F LE X LA ISO 9001 E I NC . • 78 Pin, 2.1" x 1.87" x .25" PGA type package • 82 Lead, 2.2" x 1.61 x .18" Flat Package CIRCUIT TECHNOLOGY S Second Source Compatible to the BUS-66300

mt 1117

Abstract: AMP MT CONNECTOR bl61 MTB 230 MIL-DTL-83513 h046 M22759/11 MT 87 MIL-C-83513 MIL-M-24519
Contextual Info: Microstrips .050" Contact Spacing MT The Cannon Microstrips provide an extremely dense and reliable interconnection solution in a minimum profile package, giving great application flexibility. Available with latches or guide pins, Microstrips are frequently found in

ITT Cannon 5420

Contextual Info: ca_D1-D102:Layout 1 2/10/11 11:51 AM Page 1 ca_D1-D102:Layout 1 2/10/11 11:52 AM Page 60 Microstrips .050" Contact Spacing MT The Cannon Microstrips provide an extremely dense and reliable interconnection solution in a minimum profile package, giving great

Contextual Info: Hybrid Hall Effect ICs EW-series EW-750B Shipped in bulk 500pcs/Bag EW-750B is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Unipolar Hall Supply Voltage Effect Switch 3~26.4Ｖ Hall Element Continuous

ew-750b

Abstract: EW750B EW750
Contextual Info: Hybrid Hall Effect ICs EW-series EW-750B Shipped in bulk 500pcs/Bag EW-750B is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Unipolar Hall Supply Voltage Effect Switch 3~26.4Ｖ Hall Element Continuous

EW-732

Contextual Info: Hybrid Hall Effect ICs EW-series EW-732 Shipped in bulk 500pcs/Bag EW-732 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 2.2~18Ｖ Hall Element Continuous

MT46V16M8

Abstract: MT9VDDT1672AG-265 MT9VDDT3272AY
Contextual Info: 128MB, 256MB, 512MB x72, ECC, SR : 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT9VDDT1672A – 128MB1 MT9VDDT3272A – 256MB MT9VDDT6472A – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Figure 1: Features • 184-pin, unbuffered dual in-line memory module

JEDEC DDR2-400

Abstract: DDR2 sdram pcb layout Wintec dram micron DDR2 pcb layout ddr2-533 MICRON Wintec Industries dm 1265 r sdram pcb layout guide
Contextual Info: DDR2-400, 533 Single Rank, x8 Registered SDRAM DIMMs 256MB 512MB 1GB 2GB - W1D32M72R8 W1D64M72R8 W1D128M72R8 W1D256M72R8 Preliminary* Features: • • • • • • • • • • • • Figure 1: Available layouts 240-pin Registered ECC DDR2 SDRAM Dual-InLine Memory Module for DDR2-400 and DDR2-533

MT18VDDT12872AG-265

Abstract: DM 321 PC2100 PC2700 PC3200 MT18VDDT12872A MT18VDDT12872AG-262 mt18vddt6472ag mt18vddt6472ag-26a MT18VDDT
Contextual Info: 512MB, 1GB x72, ECC, DR 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT18VDDT6472A – 512MB1 MT18VDDT12872A – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 184-pin, unbuffered dual in-line memory module

MT9VDDT1672AG-265

Contextual Info: 128MB, 256MB, 512MB x72, ECC, SR 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT9VDDT1672A – 128MB1 MT9VDDT3272A – 256MB MT9VDDT6472A – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 184-pin, unbuffered dual in-line memory module

Contextual Info: ^ 001 4, x y BUS-65610 _ ILC DATA DEVICE CORPORATION_ _ _ MIL-STD-1553 BUS CONTROLLER REMOTE TERMINAL AND BUS MONITOR FEATURES DESCRIPTION The BUS-65610 is a 16 MHz single chip dual redundant MIL-STD-1553 Bus Controller BC , Remote Terminal Unit (RTU) and Bus Monitor (MT). Packaged

128MB PC2100 DDR

Abstract: micron SDRAM SPD table
Contextual Info: 128MB, 256MB, 512MB x72, ECC, SR 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT9VDDT1672H – 128MB1 MT9VDDT3272H – 256MB MT9VDDT6472H – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 200-pin, small-outline dual in-line memory module

B-3310

Abstract: BTTC B-3300
Contextual Info: BU-65178/65179*/61588/61688*/61689* MINIATURE ADVANCED COMMUNICATION ENGINE MINI-ACE AND MINI-ACE PLUS* Make sure the next Card you purchase has. FEATURES • 5 Volt Only • Fully Integrated MIL-STD-1553 A/B STANAG 3838 Compliant Terminals • One-Square-Inch Package

B-3067

Abstract: LPB-5015 B-3226 BU-61688 TST-9007 tlp 1005 1553 transformer 1553B 61588 B-3227 BTTC B-3067 ddc B-3226
Contextual Info: BU-65178/65179*/61588/61688*/61689* MINIATURE ADVANCED COMMUNICATION ENGINE MINI-ACE AND MINI-ACE PLUS* Make sure the next Card you purchase has. FEATURES • 5 Volt Only • Fully Integrated MIL-STD-1553 A/B STANAG 3838 Compliant Terminals • One-Square-Inch Package

Contextual Info: 128MB, 256MB, 512MB x72, ECC, SR 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT9VDDT1672H – 128MB1 MT9VDDT3272H – 256MB MT9VDDT6472H – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 200-pin, small-outline dual in-line memory module