MSM51V4100 Search Results

S4-6V

Abstract: 26-PIN
Contextual Info: O K I Semiconductor MSM5 1V4 10 O/SL 4,194,304-W ord x 1-Bit D Y N A M IC R A M DESCRIPTION The MSM51V4100/SL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit configuration. The technology used to fabricate the MSM 51V4100/SL is OKI's CMOS silicon gate

Contextual Info: A O K I Semiconductor MSM51V41OO/L/S L 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V 4100/L/SL is a4,194,304-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V4100/L/SL achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSM51 V4 1 OO/L/SL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V4100/L /SL is a 4,194,304-word x 1-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM51V4100/L/SL achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSM5 1V4 10O/SL 4,194,304-Word x 1-Bit D Y N A M IC RAM DESCRIPTION The MSM 51V4100/SL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit configuration. The technology used to fabricate the MSM 51V4100/SL is OKI's CMOS silicon gate

SM511

Contextual Info: DRAMS 1-MEG DRAMS Pins / Package Configuration M SM 5 11 6 64 B-XX Fast page 4 0 / D IP 64K x 16 80 M SM 514256C -X X Fast page 2 0 / DIP, Z IP 256K x 4 60,70,80 1 -M e g x 1 60,70, 80 Pins / Package Configuration Access Time M ax ns 64/SSO P 128K x 32 45,50

Contextual Info: O K I Semiconductor MSM5 1V4 10 O/L/SL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheM SM 51 V 4 1 0 0 /L /S L is a 4,194,304-w ord x 1-bit dynam ic RA M fabricated in OKI's C M O S silicon gate technology. The M S M 51V 4100/L /S L achieves high integration, high-speed operation, and