MSM51C Search Results

T462 transistor

Abstract: EZ613 transistor t462 MSM51C256 MSM51C256-10 MSM51C256-80 MSM51C256RS
Contextual Info: 4bE D rtTTT - • b 7 2 4 2 4 D O D D ' m û ô ITS H O K I J I O K I S E M I C O N D U C T O R GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 262,144 W O R D X1-BIT S D Y N A M IC R A M GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.

Contextual Info: O K I semiconductor MSM51C464A 65,536-Word x 4-Bit DYNAMIC RÀM GENERAL DESCRIPTION T h e M S M 5 1 C 4 6 4 A is a n e w g e n e ra tio n d y n a m ic R A M o rg a n iz e d a s 6 5 .5 3 6 -w o rd x 4 -b it. T h e te c h n o lo g y u s e d to fa b ric a te th e M S M 5 1 C 4 6 4 A is O K I’s C M O S s ilic o n g a te p ro c e s s te c h n o l­

FZJ 131

Abstract: MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS dynamic ram binary cell
Contextual Info: O K I semiconductor MSM51C256RS/JS • 7= - a .* - A S " * 262, 144 W ORD X 1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

M51C262

Abstract: MSM51C262 IS916 3CX5
Contextual Info: O K I semiconductor M S M 5 1 C 2 6 2 _ _ High Performance Low Power 64K x 4 Multi-port Memory with Fast Page Mode GENERAL DESCRIPTION The OKI MSM51C262 is a high speed 65,536 x 4-bit multiport CMOS dynamic memory. The tw o

Contextual Info: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G EN E R A L DESCRIPTION T h e M S M 5 1 C 2 5 6 A is a new generation dynam ic R A M org an ized a s 262,144-w ord x 1-bit. T h e technology u sed to fabricate the M S M 5 1 C 2 5 6 A is O K I’s C O M S silicon gate p ro c e ss tech ­

51c464

Abstract: MSM51C464A MSM51C464A-10 ZIP20-P-400
Contextual Info: O K I Semiconductor MSM51C464A G5,536-Word x 4 'B it D Y N A M IC RA M DESCRIPTION The MSM51C464A is a new generation dynamic R A M organized as 65,536-woid x. 4-bit The technology used to fabricate MSM51C464A is O K I's C M O S silicon gate process technology. The

FZJ 131

Abstract: BE454 MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS L262144 dynamic ram binary cell
Contextual Info: K I SEflICONDUCTOR GROUP IDE D g fc,754240 ÖD04143 b | O K I semiconductor MSM51C256RS/JS * 262,144 W O RD X1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

18-PIN

Abstract: MSM51C256A 1772B
Contextual Info: O K I Semiconductor MSM5 1 C256 A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology.

Contextual Info: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G ENERAL DESCRIPTION The M S M 51C 256A is a new generation dynam ic RAM organized as 262,144-w ord x 1-bit. The technology used to fabricate the M SM 51C 256A is O K I’s C O M S silicon gate process te ch ­

Contextual Info: O K I Semiconductor MSM51C464A 65,536-Word x 4-Bit D Y N A M IC R A M DESCRIPTION The MSM51C464A is a new generation dynam ic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I Semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynam ic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology. The device operates at a single 5V pow er supply. Its I /O pins are TTL compatible.

EZ613

Abstract: MSM51C256-10 MSM51C256 MSM51C256RS
Contextual Info: y - y . . O K I SEMICONDUCTOR GROUP O K I semiconductor_ T -V * MSM51C256 2 6 2 ,1 4 4 W ORD X1-BITS D YN A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

18-PIN

Abstract: 20-PIN MSM51C464A MSM51C464A-10 MSM51C464A-70 MSM51C464A-80 ZIP20-P-400 msm51c464 DD177
Contextual Info: O K I Semiconductor MSM5 1C4 6 4 A 65,536-Word x 4-B it DYNAMIC RAM DESCRIPTION The MSM51C464A is a new generation dynamic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The

MSM51C256A

Abstract: msm51c256
Contextual Info: O K I Semiconductor MSM51C256A 262,144-Word x 1 - B it DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organizedas262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI'sCOMSsilicongate process technology. The device operates at a single 5V power supply. Its I/O pins are TTL compatible.

Contextual Info: 4bE D rtTTT - • b72424D ODD'mûô I T S H O K I J I O K I SEMICONDUCTOR GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 2 6 2 ,1 4 4 W O RD X1-BITS D Y N A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.

MSM6389B

Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
Contextual Info: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU

Contextual Info: O K I semiconductor MSM51C 262 _ High Performance Low Power 64K x 4 Multi-port Memory with Fast Page Mode G EN ER A L DESCRIPTION The OKI MSM51C262 is a high speed 65,536x4-bit multiport CMOS dynamic memory. The tw o ports, random access and serial access, are configured to offer optim um flexibility in graphics

Contextual Info: O K I semiconductor MSM51C256_ 262,144 WORD X1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

Contextual Info: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2320B-xxYS9/DS9 is a fully decoded 262,144-word x 36-bit CMOS Dynamic Random Access Memory Module . It is composed of eight 1-Mb DRAMs in SOJ MSM514256B packages, and four 256Kb

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/D S18 is a fully decoded 524,288-w ord x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 1-Mb DRAMs in SOJ MSM514256B packages and eight

MSC2331A-80YS3

Abstract: MSC2331A-XX BS55 EPOXY
Contextual Info: 4bE D OKI s o m l c o n c • k b?24240 j c t o □DDc bb4 5 1 3 H O K I J r MSC2331A-XX YS3/KS3 r- 262, 144 BY 9 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION O K I SEMICONDUCTOR GROUP The Oki MSC2331A-XX YS3/KS3 is a fully decoded, 262,144 words X 9 bit CMOS dynamic random