MSB842 Search Results
MSB842 Datasheets Context Search
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Contextual Info: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact |
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BF904A; BF904AR; BF904AWR BF904A | |
BF1202WRContextual Info: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR |
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BF1202; BF1202R; BF1202WR MSB035 BF1202R R77/03/pp15 BF1202WR | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer |
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BF1211; BF1211R; BF1211WR R77/01/pp16 | |
BFG403W
Abstract: radar front end
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BFG403W R77/04/pp13 BFG403W radar front end | |
BFG480W
Abstract: 1184 transistor analog transistor B 1184
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M3D124 BFG480W MSB842 R77/03/pp16 BFG480W 1184 transistor analog transistor B 1184 | |
transistor marking NEP ghz
Abstract: BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
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BF1105; BF1105R; BF1105WR MSB035 BF1105R R77/03/pp15 transistor marking NEP ghz BF1105WR marking code NA BF1105 MGM253 dual-gate | |
BFG520WContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR |
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BFG520W BFG520W/X; BFG520W/XR SCD33 123065/1500/02/pp16 | |
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Contextual Info: DISCRETE SEMICONDUCTORS BGA2001 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 12 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R • Low current, low voltage |
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BGA2001 SCA57 127127/00/01/pp8 | |
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Contextual Info: DISCRETE SEMICONDUCTORS BGA2003 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2003 FEATURES PINNING SOT343R • Low current PIN DESCRIPTION |
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BGA2003 OT343R BGA2003 SCA57 127127/00/01/pp8 | |
transistor K 2333Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BGA2001 silicon MMIC amplifier Preliminary specification 1999 Jan 04 Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 PINNING SOT343R FEATURES • Low current, low voltage PIN DESCRIPTION • Very high power gain |
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M3D124 BGA2001 SCA60 budgetnum/printrun/ed/pp11 transistor K 2333 | |
"MARKING CODE P5"
Abstract: BFG425W
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BFG425W SCA55 127127/00/03/pp12 "MARKING CODE P5" | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 1998 Mar 11 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING • Very high power gain PIN |
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BFG410W R77/04/pp13 | |
BF1212R datasheet
Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
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BF1212; BF1212R; BF1212WR SCA75 R77/02/pp15 BF1212R datasheet BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML | |
4 pin dual-emitter
Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN
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M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN | |
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transistor marking NEP ghz
Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
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BF1105; BF1105R; BF1105WR SCA56 117067/00/03/pp16 transistor marking NEP ghz dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate | |
"MARKING CODE P5"
Abstract: 03389 BFG425W
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BFG425W SCA57 125104/00/04/pp12 "MARKING CODE P5" 03389 BFG425W | |
MGM219
Abstract: 9335 895 BC817 BFG21W DCS1800 MGM224
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M3D124 BFG21W DCS1800, R77/03/pp11 MGM219 9335 895 BC817 BFG21W DCS1800 MGM224 | |
BF1101WRContextual Info: DISCRETE SEMICONDUCTORS DAT BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES PINNING |
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BF1101; BF1101R; BF1101WR MSB035 BF1101R R77/02/pp15 BF1101WR | |
DUAL-GATEContextual Info: DISCRETE SEMICONDUCTORS DAT BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer |
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BF1212; BF1212R; BF1212WR R77/02/pp16 DUAL-GATE | |
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Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure |
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M3D124 BFU510 BFU510 MSB842 125104/00/04/pp11 | |
ua 722 fcContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR |
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BFG25AW BFG25AW/X; BFG25AW/XR OT343 OT343R BFG25AW/X ua 722 fc | |
BFG425WContextual Info: DISCRETE SEMICONDUCTORS DAT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING • Very high power gain PIN |
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BFG425W R77/05/pp13 BFG425W | |
BF1109Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES PINNING |
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BF1109; BF1109R; BF1109WR MSB035 BF1109R R77/02/pp15 BF1109 | |
10GHz oscillator
Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
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M3D124 BFU510 SCA73 125104/00/04/pp12 10GHz oscillator 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ | |