BF1109 |
|
NXP Semiconductors
|
BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, SOT-4, 4 PIN, FET RF Small Signal |
Original |
PDF
|
133.63KB |
15 |
BF1109 |
|
Philips Semiconductors
|
N-Channel Dual-Gate MOS-FET |
Original |
PDF
|
113.26KB |
16 |
BF1109,215 |
|
NXP Semiconductors
|
N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
Original |
PDF
|
113.25KB |
16 |
BF1109,215 |
|
NXP Semiconductors
|
BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, SOT-4, 4 PIN, FET RF Small Signal |
Original |
PDF
|
133.63KB |
15 |
BF1109R |
|
NXP Semiconductors
|
BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, SC-61B, 4 PIN, FET RF Small Signal |
Original |
PDF
|
133.63KB |
15 |
BF1109R |
|
Philips Semiconductors
|
N-Channel Dual-Gate MOS-FET |
Original |
PDF
|
113.26KB |
16 |
BF1109R,215 |
|
NXP Semiconductors
|
N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
Original |
PDF
|
113.25KB |
16 |
BF1109R,215 |
|
NXP Semiconductors
|
BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, SC-61B, 4 PIN, FET RF Small Signal |
Original |
PDF
|
133.63KB |
15 |
BF1109WR |
|
NXP Semiconductors
|
BF1109WR - N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS |
Original |
PDF
|
133.63KB |
15 |
BF1109WR |
|
Philips Semiconductors
|
N-Channel Dual-Gate MOS-FET |
Original |
PDF
|
113.26KB |
16 |
BF1109WR,115 |
|
NXP Semiconductors
|
N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
Original |
PDF
|
113.25KB |
16 |
BF1109WR,115 |
|
NXP Semiconductors
|
BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, CMPAK-4, FET RF Small Signal |
Original |
PDF
|
133.63KB |
15 |
BF1109WRT/R |
|
NXP Semiconductors
|
N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS |
Original |
PDF
|
113.25KB |
16 |
BF1109WRTR |
|
Philips Semiconductors
|
N-channel dual-gate MOS-FET |
Original |
PDF
|
113.27KB |
16 |