BF1211 |
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NXP Semiconductors
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BF1211 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal |
Original |
PDF
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132.61KB |
16 |
BF1211 |
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Philips Semiconductors
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N-channel dual-gate MOS-FETs |
Original |
PDF
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105.3KB |
15 |
BF121-10-A-0-L-C |
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GCT
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10POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
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79.96KB |
1 |
BF121-10-A-1-L-C |
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GCT
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10POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
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79.96KB |
1 |
BF1211,215 |
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 0.9 pF; ID: 30 mA; IDSS: 11 to 19 mA; Noise figure: 1.3@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 6 V; YFS min.: 25 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
Original |
PDF
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105.29KB |
15 |
BF1211,215 |
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NXP Semiconductors
|
BF1211 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal |
Original |
PDF
|
132.61KB |
16 |
BF121-12-A-0-L-C |
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GCT
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12POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
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79.96KB |
1 |
BF121-12-A-1-L-C |
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GCT
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12POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
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79.96KB |
1 |
BF121-14-A-0-L-C |
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GCT
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14POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
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79.96KB |
1 |
BF121-14-A-1-L-C |
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GCT
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14POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
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79.96KB |
1 |
BF121-16-A-0-L-C |
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GCT
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16POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
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79.96KB |
1 |
BF121-16-A-1-L-C |
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GCT
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16POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
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79.96KB |
1 |
BF121-18-A-0-L-C |
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GCT
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18POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
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79.96KB |
1 |
BF121-18-A-1-L-C |
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GCT
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18POS, 2MM PITCH SOCKET, DIL, SM |
Original |
PDF
|
79.96KB |
1 |
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BF1211R |
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NXP Semiconductors
|
BF1211 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SC-61B, 4 PIN, FET RF Small Signal |
Original |
PDF
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132.61KB |
16 |
BF1211R |
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Philips Semiconductors
|
N-channel dual-gate MOS-FETs |
Original |
PDF
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105.3KB |
15 |
BF1211R,215 |
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NXP Semiconductors
|
N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 0.9 pF; ID: 30 mA; IDSS: 11 to 19 mA; Noise figure: 1.3@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 6 V; YFS min.: 25 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
Original |
PDF
|
105.29KB |
15 |
BF1211R,215 |
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NXP Semiconductors
|
BF1211 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SC-61B, 4 PIN, FET RF Small Signal |
Original |
PDF
|
132.61KB |
16 |
BF1211WR |
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NXP Semiconductors
|
BF1211 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal |
Original |
PDF
|
132.61KB |
16 |
BF1211WR |
|
Philips Semiconductors
|
N-channel dual-gate MOS-FETs |
Original |
PDF
|
105.3KB |
15 |