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BF1105
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NXP Semiconductors
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BF1105 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal | 
Original | 
PDF
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136.17KB | 
15 | 
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BF1105
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Philips Semiconductors
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N-Channel Dual-Gate MOS-FET | 
Original | 
PDF
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117.5KB | 
16 | 
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BF1105,215
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; VDSmax: 7 V; YFS min.: 25 mS; Package: SOT143B (SOT4); Container: Tape reel smd | 
Original | 
PDF
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117.48KB | 
16 | 
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BF1105,215
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NXP Semiconductors
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BF1105 - N-channel dual-gate MOS-FETs, SOT143B Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel | 
Original | 
PDF
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136.17KB | 
15 | 
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BF1105A
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Seiko Epson
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Surface Mount Crystal Oscillators | 
Original | 
PDF
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109.97KB | 
3 | 
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BF1105R
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NXP Semiconductors
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BF1105 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal | 
Original | 
PDF
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136.17KB | 
15 | 
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BF1105R
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Philips Semiconductors
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N-Channel Dual-Gate MOS-FET | 
Original | 
PDF
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117.5KB | 
16 | 
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BF1105R,215
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; VDSmax: 7 V; YFS min.: 25 mS; Package: SOT143B (SOT4); Container: Tape reel smd | 
Original | 
PDF
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117.48KB | 
16 | 
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BF1105R,215
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NXP Semiconductors
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BF1105 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal | 
Original | 
PDF
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136.17KB | 
15 | 
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BF1105WR
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NXP Semiconductors
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BF1105WR - N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; VDSmax: 7 V; YFS min.: 25 mS | 
Original | 
PDF
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136.17KB | 
15 | 
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BF1105WR
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Philips Semiconductors
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N-Channel Dual-Gate MOS-FET | 
Original | 
PDF
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117.5KB | 
16 | 
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BF1105WR,115
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; VDSmax: 7 V; YFS min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd | 
Original | 
PDF
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117.48KB | 
16 | 
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BF1105WR,115
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NXP Semiconductors
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BF1105 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal | 
Original | 
PDF
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136.17KB | 
15 | 
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BF1105WR,135
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; VDSmax: 7 V; YFS min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd | 
Original | 
PDF
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117.48KB | 
16 | 
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BF1105WR,135
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NXP Semiconductors
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BF1105WR - N-channel dual-gate MOS-FETs, SOT343R Package, Standard Marking, Reel Pack, SMD, Large | 
Original | 
PDF
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136.17KB | 
15 | 
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BF1105WRT/R
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; VDSmax: 7 V; YFS min.: 25 mS | 
Original | 
PDF
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117.48KB | 
16 | 
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BF1105WRTR
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Philips Semiconductors
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N-channel dual-gate MOS-FET | 
Original | 
PDF
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117.49KB | 
16 |