MSAG Search Results

ITT130AK

Abstract: SC74 5310 VA MARKING
Contextual Info: SPST High Isolation, Absorptive Switch Negative or Positive Control ITT130AK FEATURES • • • • • High isolation 39 dB at 2.5 GHz Miniature, SOT6 package Reflective open port (J1) Non-Reflective port (J2) Self-Aligned MSAG Process TRUTH TABLE (Negative Control)

ITTS501AJ

Abstract: rf05v itt501 SPDT HIGH POWER
Contextual Info: SPDT High Power T/R Switch ITTS501AJ PRELIMINARY INFORMATION FEATURES • • • MSOP-8 package Positive Control Self-Aligned MSAG -Switch MESFET Process Description Maximum Ratings T The ITT501AJ is a high power SPDT switch in a very small plastic MSOP package for

ITT8507D

Contextual Info: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION FEATURES • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

ITT313503D

Contextual Info: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D FEATURES • • • • ADVANCED INFORMATION Balanced Three Stage LNA with Limiter 8 to 11 GHz Operation 50Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS

10W Power Amplifier

Abstract: ITT338509D 6 ghz amplifier 10w
Contextual Info: 10W Power Amplifier Die 8.0 – 11.0 GHz ITT338509D FEATURES • • • • ADVANCED INFORMATION Three Stage Single-ended High Power Amplifier Broadband Performance 35% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

ITT373501D

Abstract: digital phase shifter mhz
Contextual Info: X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373501D FEATURES • • • ADVANCED INFORMATION Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF O ut R F In

ITT8506D

Contextual Info: 8W Power Amplifier Die 9.5 – 10.5 GHz ITT8506D ADVANCED INFORMATION Features • • • 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8506D is a three stage MMIC power

ITTS402AH

Abstract: J12-3
Contextual Info: SP4T Switch, 3 Volt Positive Control ITTS402AH ADVANCED INFORMATION FEATURES • • • • • QSOP-28 lead package Non-Reflective Low DC Power Consumption Positive Control when “floated” with capacitors Self-Aligned MSAG MESFET Process Description

MAAP-000079-SMB001

Abstract: AN3016 AN3019 MAAP-000079-PKG001 MAAP-000079-SMB004 MAAPGM0079-DIE 6 ghz amplifier 20w
Contextual Info: Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ ♦ 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage 8-10V Operation MSAG Process

MAAPGM0012-DIE

Abstract: MAAPGM0013-DIE Ka-band
Contextual Info: RO-P-DS-3058 - - MAAPGM0013-DIE 200mW Ka-Band Power Amplifier 32.0-36.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 32.0-36.0 GHz GaAs MMIC Amplifier 200mW Output Power Level 32.0-36.0 GHz Operation Variable Drain Voltage 5-6V Operation Self-Aligned MSAG MESFET Process

RF LNA 10 GHz

Abstract: MA01502D MESFET data sheet
Contextual Info: MA01502D Limiter/Low Noise Amplifier Die 8.5 - 12.0 GHz FEATURES • • • • • Preliminary Release Balanced Two Stage LNA with Limiter 8.5 to 12 GHz Operation 10W CW Power Handling Capability 50Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process

MAALGM0002-DIE

Abstract: X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
Contextual Info: RO-P-DS-3061 MAALGM0002-DIE X-Band Low Noise Amplifier 8.0-12.0 GHz Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ 2.3 dB Noise Figure 8.0-12.0 GHz Operation Self-Aligned MSAG MESFET Process Variable Voltage Operation Vd = 3-5V

MAAPGM0022-DIE

Contextual Info: RO-P-DS-3011 - - MAAPGM0022-DIE 1.2W S/C-Band Power Amplifier 3.0-6.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ 3.0-6.0 GHz GaAs MMIC Amplifier 3.0-6.0 GHz Operation 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation Self-Aligned MSAG MESFET Process

MAATGM0001

Abstract: MMIC s-band attenuator MAATGM0001-DIE S-band mmic
Contextual Info: RO-P-DS-3043 - - MAATGM0001-DIE S-Band Attenuator 2.0 – 6.0 GHz Features ♦ ♦ ♦ ♦ Preliminary Information 2.0 - 6.0 GHz GaAs MMIC Attenuator 2.0 to 6.0 GHz Operation 6 Bit Attenuator TTL Control Inputs Self-Aligned MSAG MESFET Process Primary Applications

x-band limiter

Abstract: x-band mmic LNA x-band MMIC limiter band Limiter MA01503D
Contextual Info: RO-P-DS-3003 - - MA01503D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process

MAAP-000070-PKG003

Abstract: AP070G MAAP-000070-MCH000 MAAP-000070-SMB003 MAAP-000070-SMB004 S2083 VD12 im339
Contextual Info: RoHS Compliant MAAP-000070-PKG003 Amplifier, Power, 1.6W 10.0-13.25 GHz PIN 1 N/C N/C N/C VGG Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate (MSAG) Process. The 5 mm PQFN package has a lead-free finish of leads that

MAAPGM0077-DIE

Abstract: AN3016 AN3019 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAP-000077-SMB004
Contextual Info: Amplifier, Power, 13W 0.7-2.5 GHz MAAPGM0077-DIE Rev B Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description The MAAPGM0077-DIE is a 2-stage 13W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It

MAAP-000068-SMB003

Abstract: AP06 MAAP-000068-PKG003 MAAPGM0068-DIE S2083 AP068G 033A3
Contextual Info: RoHS Compliant MAAP-000068-PKG003 Amplifier, Power, 1.2W 5.7-8.5 GHz Rev B Preliminary Datasheet Features ♦ 1.2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description YYWW AP068G XXX M ACOM The MAAP-000068-PKG003 is a 3-stage 1.2 W power amplifier with on-chip bias networks in a 20 lead, 5 mm PQFN

MAAP-000066-PKG003

Abstract: MAAP-000066-SMB003 MAAPGM0066-DIE S2083
Contextual Info: RoHS Compliant Amplifier, Power, 2.0W 2.5-5.0 GHz MAAP-000066-PKG003 Rev Preliminary Datasheet Features ♦ ♦ ♦ ♦ 2.0 Watt Saturated Output Power Level Variable Drain Voltage 6-10V Operation MSAG Process 5x5 mm 20 Lead PQFN Package YYWW AP066G XXX

AP021G

Abstract: MAAP-000021-PKG003 MAAP-000021-SMB003 MAAPGM0021 MAAPGM0021-DIE MAAPGM0021-SMB S2083
Contextual Info: RoHS Compliant MAAP-000021-PKG003 Amplifier, Power, 2W 5.0-8.5 GHz Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ 2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG Process 5x5 mm 20 Lead MLP Package YYWW AP021G XXXX

ap067g

Abstract: MAAP-000067-PKG003 MAAP-000067-SMB003 MAAP-000067-SMB004 MAAPGM0067-DIE S2083
Contextual Info: RoHS Compliant MAAP-000067-PKG003 Amplifier, Power, 2W 5.7-8.5 GHz Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ 2 Watt Saturated Output Power Level Variable Drain Voltage 6-10V Operation MSAG Process 5x5 mm 20 Lead PQFN Package YYWW AP067G XXXX

APGM0030

Contextual Info: RO-P-DS-3074 Preliminary Information MAAPGM0030 MAAPGM0030 5.0-9.0 GHz 1W Power Amplifier Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0030 YWWLLLL Primary Applications ♦ Multiple Band Point-to-Point Radio

Contextual Info: RO-P-DS-3062 MAALGM0004-DIE X/Ku-Band Low Noise Amplifier 11.0-16.0 GHz Preliminary Information 11.0-16.0 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ 2.9 dB Noise Figure 11.0-16.0 GHz Operation Self-Aligned MSAG MESFET Process Variable Voltage Operation Vd = 3-5V

apgm

Abstract: APGM0038
Contextual Info: RO-P-DS-3060 C Preliminary Information MAAPGM0038 MAAPGM0038 8.0-12.0 GHz 1.2W Power Amplifier Features ♦ ♦ ♦ ♦ 1.2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation Self-Aligned MSAG MESFET Process High Performance Ceramic Bolt Down Package