2014 - Not Available
Abstract: No abstract text available
Text: 5 6 1 7 J2 RF Out J1 RF In Pad Configuration TriQuintâs TGA2583 is an S-band MMIC amplifier fabricated on TriQuintâs production 0.25um GaN on SiC process (TQGaN25). Covering , , POUT = 41.6dBm, PDISS = 16.5W Notes: 1. Thermal resistance measured to back of carrier plate. MMIC
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TGA2583
5-32V
175mA,
TGA2583
TQGaN25)
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2014 - Not Available
Abstract: No abstract text available
Text: 5 6 1 7 J2 RF Out J1 RF In Pad Configuration TriQuintâs TGA2585 is an S-band MMIC amplifier fabricated on TriQuintâs production 0.25um GaN on SiC process (TQGaN25). Covering , . MMIC mounted on 40 mils CuMo (80/20) carrier using 1.5 mil AuSn. Median Lifetime Median Lifetime
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TGA2585
5-32V
225mA,
TGA2585
TQGaN25)
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2004 - FMM5049
Abstract: S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND FMM5049VT MMIC s-band amplifier
Text: FMM5049VT L,S-Band Power Amplifier MMIC FEATURES High Output Power: Pout=41.0dBm (typ.) High , FMM5049VT is a high-gain wide-band three-stage MMIC amplifier designed for PCS/PCN and W-CDMA application as , Amplifier MMIC OUTPUT POWER vs. FREQUENCY 44 42 40 VDD=10V, VGG=-5V [IDD(DC)=2495mA] OUTPUT POWER , L,S-Band Power Amplifier MMIC S-PARAMETER +50j +25j +100j +90° +10j +250j 2.2GHz 0 , 3 FMM5049VT L,S-band Power Amplifier MMIC Package Out Line 4 FMM5049VT L,S-Band Power
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FMM5049VT
FMM5049VT
FMM5049
S-Band Power Amplifier
S-Band high Power Amplifier
S-band mmic
MMIC POWER AMPLIFIER S-BAND
MMIC s-band amplifier
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2002 - 5 Watt S-Band Power Amplifier
Abstract: s-band 50 Watt power amplifier S-Band Power Amplifier MESFET MMIC POWER AMPLIFIER S-BAND 2W MMIC s-band S-band mmic MMIC AMPLIFIER S-BAND 2W MAAPGM0036-DIE RO-P-DS-3017
Text: Information Features 1.2-3.2 GHz GaAs MMIC Amplifier 1.2-3.2 GHz Operation 1.2 Watt Saturated , dBc 3rd Harmonic 3f -20 dBc 1. TB = MMIC Base Temperature RO-P-DS-3017 - - 1W L , Input Power PIN 21.0 dBm Junction Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C -16.6 °C/W * VDD * IDQ Operating , circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use
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RO-P-DS-3017
MAAPGM0036-DIE
MAAPGM0036-Die
5 Watt S-Band Power Amplifier
s-band 50 Watt power amplifier
S-Band Power Amplifier
MESFET
MMIC POWER AMPLIFIER S-BAND 2W
MMIC s-band
S-band mmic
MMIC AMPLIFIER S-BAND 2W
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2002 - MMIC s-band amplifier
Abstract: 5 Watt S-Band Power Amplifier 2 Watt S-Band Power Amplifier MAAPGM0026-DIE MMIC POWER AMPLIFIER S-BAND MMIC s-band s-band 50 Watt power amplifier S-Band Power Amplifier S-band mmic S-Band Power Amplifier intercept point
Text: RO-P-DS-3013 - - MAAPGM0026-DIE 0.6W L/S-Band Power Amplifier 0.8-3.3 GHz Preliminary Information Features 0.8-3.3 GHz GaAs MMIC Amplifier 0.8-3.3 GHz Operation 0.6 Watt Saturated , 6 dB 2nd Harmonic 2f -15 dBc 3rd Harmonic 3f -25 dBc 1. TB = MMIC Base , Junction Temperature Tj 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC , circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use
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RO-P-DS-3013
MAAPGM0026-DIE
MAAPGM0026-Die
MMIC s-band amplifier
5 Watt S-Band Power Amplifier
2 Watt S-Band Power Amplifier
MMIC POWER AMPLIFIER S-BAND
MMIC s-band
s-band 50 Watt power amplifier
S-Band Power Amplifier
S-band mmic
S-Band Power Amplifier intercept point
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2001 - S-Band Power Amplifier intercept point
Abstract: MAAPGM0047-DIE
Text: Information Features 16.0-19.5 GHz GaAs MMIC Amplifier 16.0-19.5 GHz Operation 0.5 Watt , dB 1. TB = MMIC Base Temperature 2/6 RO-P-DS-3040 - - 0.6 W L/S-Band Power Amplifier , 18.0 dBm Junction Temperature Tj 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C- 36.6°C/W * VDD * IDQ Operating Instructions This , circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach
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RO-P-DS-3040
MAAPGM0047-DIE
MAAPGM0047-Die
S-Band Power Amplifier intercept point
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2002 - S-Band Power Amplifier
Abstract: s-band 50 Watt power amplifier MMIC s-band S-Band Power Amplifier intercept point S-band mmic Watt 2 Watt S-Band Power Amplifier MMIC s-band amplifier S-band mmic 5 Watt S-Band Power Amplifier MAAPGM0027-DIE
Text: Preliminary 2.0- 4.0 GHz GaAs MMIC Amplifier 2.0-4.0 GHz Operation 1 Watt Saturated Output Power Level , dBc 3rd Harmonic 3f -25 dBc 1. TB = MMIC Base Temperature RO-P-DS-3014 - - 1W , 13.0 dBm TJ 150 °C Note 2 °C Junction Temperature MMIC Base Temperature Min TB Typ Max Unit 2. Maximum MMIC Base Temperature = 150°C -33.1 °C/W * VDD * IDQ , circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use
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RO-P-DS-3014
MAAPGM0027-DIE
MAAPGM0027-Die
S-Band Power Amplifier
s-band 50 Watt power amplifier
MMIC s-band
S-Band Power Amplifier intercept point
S-band mmic Watt
2 Watt S-Band Power Amplifier
MMIC s-band amplifier
S-band mmic
5 Watt S-Band Power Amplifier
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2002 - MAATGM0001
Abstract: MMIC s-band attenuator MAATGM0001-DIE S-band mmic
Text: RO-P-DS-3043 - - MAATGM0001-DIE S-Band Attenuator 2.0 6.0 GHz Features Preliminary Information 2.0 - 6.0 GHz GaAs MMIC Attenuator 2.0 to 6.0 GHz Operation 6 Bit Attenuator TTL Control Inputs Self-Aligned MSAG® MESFET Process Primary Applications Satellite , Point P1dB 26 dBm 1. TB = MMIC Base Temperature 2/7 RO-P-DS-3043 - - S-Band , MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use AuSn (80/20
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RO-P-DS-3043
MAATGM0001-DIE
MAATGM0001-Die
MAATGM0001
MMIC s-band attenuator
S-band mmic
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2002 - MMIC s-band phase shifter
Abstract: MMIC s-band MAPCGM0003-DIE S-band mmic P180 RO-P-DS-3045
Text: RO-P-DS-3045 - - MAPCGM0003-DIE S-Band Phase Shifter 2.3 4.1 GHz Features Preliminary Information 2.3-4.1 GHz GaAs MMIC Phase Shifter 2.3 to 4.1 GHz Operation 6 Bit Phase Shifter (0º ~ 354º, CW) TTL Control Inputs Self-Aligned MSAG® MESFET Process Primary Applications , 23 dBm 1. TB = MMIC Base Temperature 2/7 RO-P-DS-3045 - - S-Band Phase Shifter , mount. Support circuitry typical of MMIC characterization. Assembly Instructions: Die attach: Use
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RO-P-DS-3045
MAPCGM0003-DIE
MAPCGM0003-Die
MMIC s-band phase shifter
MMIC s-band
S-band mmic
P180
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2 Watt S-Band Power Amplifier
Abstract: DC bias of gaas FET 300 watts amplifier s-band s-band 50 Watt power amplifier S-band mmic MMIC s-band 5 Watt S-Band Power Amplifier MIS us army MMIC s-band amplifier MMIC s-band attenuator
Text: HIGH VOLTAGE, LOW COST FETS FOR HPA MMIC APPLICATIONS M /A-COM is a longtime supplier to the military, Navy, Army and Air Force of GaAs MMICs, employed in active phased array radars. To , ago, the Navy identified a need for more MMIC power than could be achieved using a 10 V GaAs process , Fig. 6 Output power and PAE of a 10 W higher impedance for a given power S-band 24 V GaAs MMIC , . No match Fig. 7 Small-signal gain and ing external to the MMIC was apinput/output VSWR of the 10 W
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block diagram of telemetry
Abstract: voltage telemetry and its applications block diagram of telemetry system pll FM TRANSMITTER CIRCUIT DIAGRAM 1 transistor fm transmitter 5 watt IRIG simple heart rate monitor circuit diagram telemetry block diagram IRIG 106 block diagram telemetry
Text: W power amplifier MMIC 's. Additionally, switching power regulation circuits were implemented , Figure 1: TTM System Block Diagram Figure 2: Measured performance of the 2 W MMIC PA @ VCC = 5.0V , controlled oscillator, and a digitally programmable phase-locked loop. The 2 W MMIC power amplifier (PA , PA MMIC can be packaged in a 3 mm or 4mm leadless plastic package. These packages have a copper ground slug underneath the MMIC to transfer heat to the printed circuit board. The input of the PA is
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1997 - MAAM23000-A1
Abstract: MAAM23000A1 MAAM23000
Text: Low Noise GaAs MMIC Amplifier 2-3 GHz Features q q q q q MAAM23000-A1 V 2.00 CR-3 Low Noise Figure: 1.25 dB High Gain: 26 dB No External Components Required DC Decoupled RF Input and Output Small, Low Cost 8-Lead Ceramic Package Description M/A-COM's MAAM23000-A1 is a wide band, low noise, MMIC amplifier housed in a small 8-lead ceramic package. It includes two integrated gain stages and , 1.8 Max. Low Noise GaAs MMIC Amplifier MAAM23000-A1 V 2.00 Absolute Maximum Ratings 1
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MAAM23000-A1
MAAM23000-A1
50-ohm,
MAAM23000A1
MAAM23000
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2002 - FE55-0005
Abstract: MA05130-DIE
Text: S-Band Voltage Controlled Oscillator 2.2 - 2.4 GHz V 1P.00 MA05130-DIE Preliminary Features · · · · · · OUTLINE DRAWING Single supply 3 volt operation High Power Output: 10 dBm into 50 ohms Integrated Varactor 10 dB buffer amplifier Low Phase Noise due to InGaP HBT process External tank Capacitor for temperature stability 13.1 .333 20.1 .510 35.1 .892 30.2 .767 VCC VTUNE 23.1 .586 TANK Description 15.2 .386 M/A-COM's MA05130-DIE is a MMIC based
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MA05130-DIE
MA05130-DIE
FE55-0005
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2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
Abstract: abstract for fm transmitter two stage amplifier abstract for fm transmitter two stage IRIG B generator irig b converter block diagram of telemetry FE55-0006 block diagram fm transmitter IRIG B amplitude modulation transmitter circuit diagram
Text: amplifier MMIC 's. Additionally, switching power regulation circuits were implemented within the module to , MMIC power amplifier is a 3-stage device, which is designed using small signal and nonlinear FET , for supply line bypassing. The bias networks are implemented on the MMIC , minimizing the number of , Measured performance of the 1 W MMIC HPA @ VDS = 5.0V The dual port VCO is based on M/A-COM
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2010 - MAIA-009992-000000
Abstract: MMIC s-band phase shifter MMIC s-band amplifier gain 5625 phased array radar module AMPLIFIER 2 MHZ 100W MMIC s-band attenuator
Text: Schematic Note: Only a Single Channel Shown 20Watt LDMOS 120Watt LDMOS 2Watt GaAs MMIC Pre-Driver
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MAIA-009992-000000
100us
MAIA-009992-000000
MMIC s-band phase shifter
MMIC s-band amplifier
gain 5625
phased array radar module
AMPLIFIER 2 MHZ 100W
MMIC s-band attenuator
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x-band microwave fet
Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , microwave and digital FETS can be fabricated on a single MMIC , with each microwave device independently , . Cost Drivers Yield is the prime MMIC cost driver. MSAG yields, even for very complex chips, are
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2004 - TRANSISTOR SMD MARKING CODE w2
Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Text: -17 Figure 2 shows a typical application circuit for the BGA2715-17 MMIC . The device is internally matched , decoupling capacitor C1 should be located as close as possible to the MMIC . The PCB top ground plane, connected to the pins 2, 4 and 5 must be as close as possible to the MMIC , preferably also below the MMIC . When using via holes, use multiple via holes, as close as possible to the MMIC . Application , Mixer to IF circuit or demodulator from RF circuit wideband amplifier Oscillator The MMIC
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2005 - MAAM23000-A1
Abstract: MAAM23000 MAAM23000A1 MAAM23000A1G mesfet low noise MMIC POWER AMPLIFIER S-BAND
Text: RoHS Compliant Low Noise GaAs MMIC Amplifier 2.0 - 3.0 GHz Features · · · · · · MAAM23000-A1 V3 Schematic Low Noise Figure: 1.25 dB High Gain: 26 dB No External Components Required DC , 's MAAM23000-A1 is a wide band, low noise, MMIC amplifier housed in a lead-free, small 8-lead ceramic package , . RoHS Compliant Low Noise GaAs MMIC Amplifier 2.0 - 3.0 GHz MAAM23000-A1 V3 Electrical , www.macom.com for additional data sheets and product information. RoHS Compliant Low Noise GaAs MMIC
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MAAM23000-A1
MAAM23000-A1
50-ohm,
MAAM23000
MAAM23000A1
MAAM23000A1G
mesfet low noise
MMIC POWER AMPLIFIER S-BAND
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2003 - A 1908 transistor
Abstract: FE55-0006 MMIC s-band power amplifier 5 ghz FQFP-16
Text: frequency and power output. GND M/A-COM's FE55-0006 is a MMIC based voltage controlled oscillator
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FE55-0006
FQFP-16
pack55-0006
FE55-0006
A 1908 transistor
MMIC s-band
power amplifier 5 ghz
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2002 - FE55-0006
Abstract: FQFP-16 FE55-0005 PLL 2400 MHZ
Text: Lower S-Band Voltage Controlled Oscillator FE55-0006 2.2 - 2.3 GHz V 1P.00 Preliminary Features · · · · · OUTLINE DRAWING Single supply 3 volt operation High Power Output: 10 dBm into 50 ohms Integrated Varactor 10 dB buffer amplifier Low Phase Noise due to InGaP HBT process Description M/A-COM's FE55-0006 is a MMIC based voltage controlled oscillator available as FQFP-16 4 mm surface mount package for easy assembly on standard pick and place SMT production ines. The FE55-0006 is
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FE55-0006
FE55-0006
FQFP-16
FE55-0005
PLL 2400 MHZ
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UPG107B
Abstract: mmic s3 UPG1078 BF08 UPG107P
Text: NEC S-BAND SPDT MMIC SWITCH UPG107B UPG107P DESCRIPTION UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an 8 pin high reliability ceramic flat package that is easy to install. It can be used in wide-band switching applications. FEATURES ⢠WIDE OPERATING FREQUENCY BAND: DC to 3.4 GHz ⢠SWITCHING SPEED 5 ns TYPICAL ⢠HERMETICALLY SEALED PACKAGE ASSURES HIGH
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UPG107B
UPG107P
mmic s3
UPG1078
BF08
UPG107P
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2009 - 2 Watt S-Band Power Amplifier
Abstract: s-band 50 Watt power amplifier S-Band Power Amplifier s-band 50 Watt power amplifier DATASHEET AM42-0055 CR-15 MMIC s-band MMIC POWER AMPLIFIER S-BAND 2 Watt rf Amplifier HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz
Text: AM42-0055 1 Watt/2 Watt S-Band Power Amplifier 2.2 - 2.4 GHz Rev. V1 Features Outline Drawing 1 · High Linear Gain: 29 dB typ. · High Saturated Output Power: +33 dBm typ. · 50 Ohm Input/Output Broadband Matched Description M/A-COM's AM42-0055 is a two stage MMIC power amplifier in a bolt down ceramic package, allowing easy assembly. The AM42-0055 employs a fully matched chip with internally decoupled gate and grain bias networks. The AM42-0055 is designed to operate from a constant
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AM42-0055
AM42-0055
2 Watt S-Band Power Amplifier
s-band 50 Watt power amplifier
S-Band Power Amplifier
s-band 50 Watt power amplifier DATASHEET
CR-15
MMIC s-band
MMIC POWER AMPLIFIER S-BAND
2 Watt rf Amplifier
HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz
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Not Available
Abstract: No abstract text available
Text: « n iJ H P A » v u f ly Low Noise GaAs MMIC Amplifier 2-3 GHz Features · · · · · Low Noise Figure: 1.25 dB High Gain: 26 dB No External Components Required DC Decoupled RF Input and Output Small, Low Cost 8-Lead Ceramic Package MAAM23000-A1 V 2 .0 0 CR-3 021 OMN R IM W E N M ftR K 0 . 1 S 0 S Q . ¡Ç- s * ^ L 3 Equd S p i <5 0 .0 SO (1 .2 7 ) 1 ' 1 r p n i| I I pr-l E , wide band, low noise, MMIC amplifier housed in a small 8-lead ceramic package. It includes two
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MAAM23000-A1
MAAM23000-A1
50-ohm,
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uPG107B
Abstract: No abstract text available
Text: S-BAND SPDT MMIC SWITCH ^ ® uPG107B uPG107P FEATURES ~- IN - OUT 1 INSERTION LOSS VS. FREQUENCY · WIDE OPERATING FREQUENCY BAND: DC to 3.4 GHz · SWITCHING SPEED 5 ns TYPICAL · HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY DESCRIPTION UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It is housed in an 8 pin high reliability ceramic flat
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uPG107B
uPG107P
UPG107B,
UPG107P
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x-band power transistor
Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC , with each microwave device , realization of Figure 1. (above) Arrhenius Plot of MSAG Power MMIC Accelerated RF Life Test (~2 dB
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