MRAL1720 Search Results

Contextual Info: MRAL1720-20 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)42â I(C) Max. (A)8.0 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MRAL1720-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)42â I(C) Max. (A)500m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

"RF Power Transistor"

Abstract: MRAL1720-9
Contextual Info: MRAL1720-9 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 4L FLG The ASI MRAL1720-9 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz. FEATURES: • Diffused Ballast Resistors. • Internal Matching Network

MRAL1720-9

Abstract: "RF Power Transistor" 2L TRANSISTOR NPN rf transistor
Contextual Info: MRAL1720-9 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 250 2L FLG The ASI MRAL1720-9 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz. C FEATURES: • Diffused Ballast Resistors. • Internal Matching Network

MRAL1720-5

Contextual Info: MRAL1720-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 4L FLG The ASI MRAL1720-5 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz. FEATURES: • Diffused Ballast Resistors. • Internal Matching Network

MRAL1720-20

Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRAL1720-20 The RF Line Microwave Power TVansistor . . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1.7 to 2.0 GHz frequency range. • Designed for Class C, Common Base Power Amplifiers

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

MRA1720-9

Abstract: mra1720 LT 7202 mral1720-2 MRAL1720-20 MRAL1720
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R A L1720 Series The RF Line M ic ro w a v e P o w e r T ra n sisto rs 6 to 7.5 dB 1.7-2 GHz 2 TO 20 WATTS BROADBAND MICROWAVE POWER TRANSISTORS . . . designed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle