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MRA14 Datasheets (4)

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Advanced Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MRA1417-11		Advanced Semiconductor	Transistor	Original	PDF	35.54KB	1
MRA1417-2		Advanced Semiconductor	Transistor	Original	PDF	28.22KB	1
MRA1417-6		Advanced Semiconductor	Transistor	Original	PDF	26.91KB	1
MRA1417-6H		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR	Original	PDF	26.93KB	1

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Winchester Interconnect XMRA14PD5F1C000
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Bristol Electronics	XMRA14PD5F1C000		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Winchester Interconnect XMRA14PD5F1A000 External Miniature Rectangular Connector
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Bristol Electronics	XMRA14PD5F1A000		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Winchester Interconnect MRA-14P Electronic Component
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Quest Components	MRA-14P		60			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Winchester Interconnect MRA14SJTCH1 RACK AND PANEL CONNECTOR
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Quest Components	MRA14SJTCH1		9			1 $18.20 10 $18.20 100 $18.20 1000 $18.20 10000 $18.20	Buy Now
MISC MIL-AERO MRA-14PJ UNCODED
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Interstate Connecting Components	MRA-14PJ		7			1 - 10 - 100 - 1000 - 10000 -	Buy Now

MRA14 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1417-11 Abstract: MRA1417 Contextual Info: MO TO ROLA • SEMICONDUCTOR TECHNICAL DATA MRA1417 Series The RF Line M ic ro w a v e P o w er Transistors 7 to 8 dB 1.4-1.7 GHz 2 TO 25 WATTS BROADBAND MICROWAVE POWER TRANSISTORS . . . designed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in	OCR Scan	mra1417 1417-11	PDF
MRA1417-2 Contextual Info: MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. PACKAGE STYLE 250 2L FLG C FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching	Original	mra1417-2	PDF
MRA1417-6 Abstract: MRA1417-6H Contextual Info: MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. PACKAGE STYLE .250 2L FLG B FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting	Original	mra1417-6h mra1417-6	PDF
mra14 Contextual Info: MRA14171-11H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-11H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. PACKAGE STYLE 250 2L FLG C FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting	Original	mra14171-11h mra1417-11h mra14	PDF
MRA1417-11 Contextual Info: MRA1417-11 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-11 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES INCLUDE: PACKAGE STYLE 250 2L FLG C • Gold Metallization • Emitter Ballasting	Original	mra1417-11	PDF
MRA1417-2 Contextual Info: MRA1417-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.5m @V(CBO) (V) (Test Condition)28	Original	mra1417-2	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2phx11136q-17 motorola transistors mrf 947 trimpots 3296 transistor c5386 +71n4740 2n5591 motorola 2n5688 cq 542 transistor npn motorola equivalent transistor of 2sc3358 hb215/d ic cd 2399 gp	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	sg73/d triac zd 607 1n5204 ca2820 trw +72n4427 equivalent bfr91 2n6823 842 317 so8 bd243 pinout bd529 bf506 bf845	PDF
2N4427 equivalent bfr91 Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability	OCR Scan	powes3666 mrf3866 2n2857 2n3866 +162n5943 mrf904 mrf571 2n4958 2n3160 2n5583 2n4427 equivalent bfr91 bfr90 equivalent 2n5503 mra1600-30 tpv-595a 2n3553 equivalent mrf477 equivalent mra0500-19l 2n6084 equivalent motorola transistor mrf239	PDF
1417H Abstract: C1394c A-1417 MRA1417H Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R A 1417H Series The RF Line M icrow ave Power Transistors . . d esig n ed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in the 1.4 to 1.7 GHz fre q u e n cy range. 7.4 to 8 dB	OCR Scan	1417h ra1417-11h c1394c a-1417 +1mra1417h	PDF
MLED96 Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B	Original	atv5030 atv5090b atv6031 atv6060h +15atv7050 bal99lt1 bas16lt1 bas21lt1 bav70lt1 bav74lt1 mled96 brx49 scr mrf549 mrf660 mrf548 mmbr2857lt1 cr2428 mpf3822 mrf548 motorola	PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1phx11136q-14 mhw721a2 13001 s 6d transistor atv5030* motorola +72n5591 motorola 13001 6d transistor bgy41 mhw710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
MRA1417-6 Abstract: MRA1417 Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Power Transistor . . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1.4 to 1.7 GHz frequency range. • Designed for Class C, Common Base Power Amplifiers	OCR Scan	mra1417-6 mra1417	PDF
TRANSISTOR SUBSTITUTION 1993 Abstract: trw RF POWER TRANSISTOR trw rf semiconductors testing good or bad electronic components circuit AN1032 trw rf transistor MIL-C-17 MRA1417-6 AN-1032 MOTOROLA TRANSISTOR 726 Contextual Info: Order this document by AN1032/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1032 HOW LOAD VSWR AFFECTS NON-LINEAR CIRCUITS Prepared by: Don Murray RF Devices Division Lawndale, Calif. Reprinted from RF Design Magazine If your amplifiers test out fine in the lab but fail QC	Original	an1032/d an1032 transistor substitution 1993 trw rf power transistor +7trw rf semiconductors testing good or bad electronic components circuit trw rf transistor mil-c-17 mra1417-6 an-1032 motorola transistor 726	PDF

trw RF POWER TRANSISTOR Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .	OCR Scan	trw rf power transistor trw rf transistor trw transistors lt 9228 +6trw 131* rf power transistor trw rf semiconductors 2023-12 trw 52604 tp 9382 trw hybrid	PDF
TRANSISTOR SUBSTITUTION 1993 Abstract: MRA1417-6 motorola 5118 TRANSISTOR SUBSTITUTION DATA BOOK 1993 AN1032 TRW Microwave Detector trw RF POWER TRANSISTOR MIL-C-17 726 MOTOROLA TRANSISTORS MOTOROLA TRANSISTOR 726 Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1032/D SEMICONDUCTOR APPLICATION NOTE AN1032 How Load VSWR Affects NonĆlinear Circuits Freescale Semiconductor, Inc. Prepared by: Don Murray RF Devices Division Lawndale, Calif. Reprinted from RF Design Magazine	Original	an1032/d an1032 transistor substitution 1993 mra1417-6 +7motorola 5118 transistor substitution data book 1993 trw microwave detector trw rf power transistor mil-c-17 726 motorola transistors motorola transistor 726	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	cb-f36c 2sd1642 2sd2182 2sc4489 +11-08s-ksd 302 250v, 10a irf 5630 transistor 2sb 367 irf 3055 ac153y transistor esm 2878 tip 43c transistor 2sk116 bf199 bd643	PDF