MR181 Search Results

Contextual Info: SINGLE SIDEBAND MODULATOR 6 to 18 GHz RF • 60 to 80 MHz IF Model MR181 CUSTOM SPECIFICATIONS Frequency range RF GHz LO (GHz) IF (MHz) Conversion loss (dB) Sideband suppression (dB) IF drive level (dBm) IM suppression ±2IF (dBc) ±3IF (dBc) VSWR RF LO

MR1215SLR

Abstract: MR1215SL MR1219SL MR1815SL MR1819SL
Contextual Info: MR1215SL, M R1219SL/M R1815SL, MR1819SL continued F IG U R E 1 - M AX IM U M F O R W A R D V O L T A G E D R O P F IG U R E 2 - M A X IM U M F O R W A R D PO W E R D IS S IP A T IO N l „ AV„ AVERAG E FORW ARD CUR R EN T (A M P) F IG U R E 3 - M A X IM U M C U R R E N T R A T IN G S

Contextual Info: MR1812SL Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k¥ V(FM) Max.(V) Forward Voltage400mí @I(FM) (A) (Test Condition)80 @Temp. (øC) (Test Condition)150#

MR181

Abstract: mixer
Contextual Info: SPECIFICATION BULLETIN MR181 MIXER SSBM RF/LO: 6 to 18 GHz IF: 40 to 80 MHz Standard Product Features • Broadband RF Coverage • Field Replaceable SMA Connectors • Suitable for Stripline Integration • Sideband Rejection 30 dB typ • Carrier Suppression 28 dB typ

Contextual Info: MR1812SB Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k¥ V(FM) Max.(V) Forward Voltage400mí @I(FM) (A) (Test Condition)80 @Temp. (øC) (Test Condition)150#

MR181-1

Abstract: mixer
Contextual Info: SPECIFICATION BULLETIN MR181-1 IMAGE REJECT MIXER RF/LO: 6 to 18 GHz IF: 20 to 200 MHz Standard Product Features • Broadband RF Coverage • Low Conversion Loss 6.5 dB typ • Field Replaceable SMA Connectors • Suitable for Stripline Integration • Triple Balanced Design

MR1215SLR

Abstract: MR1215SL MR1815SL MR1215FL MR1219FL MR1219SL MR1819SL 10-32 UNF 2 A
Contextual Info: MR1215FL, MR1219FL SILICON MR1815SL, MR1819SL UNIQUE, MULTI-CELL RECTIFIERS OFFERING HIGHEST ORDER OF RELIABILITY IN POWER APPLICATIONS HIGH-CURRENT SILICON RECTIFIERS 80/100 A M P E R E 300 , 600 V O L T S D IF F U S E D JU N C T IO N S Designers Data fo r "W orst Case" Conditions

MR1215SL

Abstract: MR1815SL MR1215FL MR1219FL MR1219SL MR1819SL
Contextual Info: MR1215FL, MR1219FL SILICON MR1815SL, MR1819SL UNIQUE, MULTI-CELL RECTIFIERS OFFERING HIGHEST ORDER OF RELIABILITY IN POWER APPLICATIONS HIGH-CURRENT SILICON RECTIFIERS 80/100 AMPERE 300, 600 VOLTS DIFFUSED JUNCTIONS Designers Data for "Worst Case" Conditions

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

CX20551

Abstract: MTP81 R5538 BAV88 isl6260 HP PAVILION G6 Quanta R52 HP Pavilion g6 CF 309 ICS954206AGT quanta
Contextual Info: 1 2 3 4 5 6 PCB STACK UP 8 CT6 BLOCK DIAGRAM LAYER 1 : TOP LAYER 2 : GND Calistoga / Yonah /ICH-7m CPU THERMAL SENSOR LAYER 3 : IN1 A 7 CPU Yonah/Merom LAYER 4 : IN2 LAYER 5 : VCC XXX Pins uPGA LAYER 6 : BOT 14.318MHz PG 5 PG 38 CLOCK GEN PG 3,4 SBLINKCLK, SBLINKCLK#

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

diode c05*10

Abstract: C752 diode
Contextual Info: Model # page Active Coaxial Limiters LR127. 58 LR178. 58 Active Mixers MR104.54 MR126L. 46 MR139L. 52

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor