MPS01 Search Results

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

capacitor ceramic variable RF

Contextual Info: MPS-013001-84 100 to 3000 MHz Variable Gain Amplifier Email: info@mwtinc.com www.mwtinc.com Features High IP3 +34 dBm Typcal Variable Gain High P1dB +21 dBm Typical 30% High Power Added Efficiency +5 Volt Bias The MPS-013001-84 is an internally matched GaAs FET amplifier in a surface

ap910401

Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
Contextual Info: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology

MPS 808

Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical

MPS 808

Abstract: MwT-10 252724 445122 MwT-h17 MIL-PRF38535 Power Amplifier MMIC 2.6 GHz 0218-H4N2 .H2 sot89 solar voltage regulator
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

10CR1

Abstract: MPS-013001-04 MPS-013001-84 mps 1200
Contextual Info: MPS-013001-04 Broadband Amplifier 100 to 3000 MHz ! IP3: +34 dBm ! P1dB: 21 dBm ! Gain: 11 dB Model #: MPS-013001-04 Features ! ! ! ! ! Leadless Chip Carrier +34 dBm IP3 +21 dBm P1dB 11dB Gain Single Positive Bias ! Interchangeable with MPS-013001-84 both

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

Quality System

Abstract: GaN Amplifiers Wireless Amplifiers Hybrid Modules mwtinc GM-141526-H4
Contextual Info: MMIC Amplifiers ƒƒHigh Performance/Quality MMIC Based on InGaP HBT, pHEMT, and Linear MESFET Technologies ƒƒHigh Linearity, Fully Matched WiMax Power Amplifiers ƒƒMilitary Screening Available on Hermetically Sealed Package Products ƒƒLow Cost Commercial Products

MPS-013001-84

Contextual Info: MPS-013001-84 100 to 3000 MHz Variable Gain Amplifier Email: info@mwtinc.com www.mwtinc.com Features High IP3 +34 dBm Typcal Variable Gain High P1dB +21 dBm Typical 30% High Power Added Efficiency +5 Volt Bias The MPS-013001-84 is an internally matched GaAs FET amplifier in a surface

Contextual Info: MPS-013001-84 100 to 3000 MHz Variable Gain Amplifier Email: info@mwtinc.com www.mwtinc.com Features High IP3 +34 dBm Typcal Variable Gain High P1dB +21 dBm Typical 30% High Power Added Efficiency +5 Volt Bias The MPS-013001-84 is an internally matched GaAs FET amplifier in a surface

JESD97

Abstract: EBA06DRTN-S23 ABC60DRTN-S99 ANB10DHRN EZM24DRYH AMM12DRZH EZM24DSEH EZC12DREI BF64ABT emc10drmh
Contextual Info: Marking Insulator Material Terminal Plating Terminal Material Maximum ABB105DHHN N/A ABB105DHHN Y N JESD97 JESD97 1 260 Deg. C Max 2 Minutes Max.; 3X +150 Deg. C Beryllium Copper Contact Surface: .000010" Gold; Termination: .000100" Pure Tin-Matte PPS ABB40DHHD