GaAs FET amplifer
Abstract: AW1218301N AW612304 AP45401 ph01 AL26501 AL618801 AW218201N AW26204 AW26201N 
 
Contextual Info: MicroWave Technology, Inc. MICROWAVE AMPLIFIERS Standard Amplifier Capability MicroWave Technology, Inc. has been a leading manufacturer of high performance amplifiers since it was founded in 1982. MwT’s principal strengths are derived from an in-house quarter micron Gallium Arsenide device
 
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PH-01 
GaAs FET amplifer
AW1218301N
AW612304
AP45401
ph01
AL26501
AL618801
AW218201N
AW26204
AW26201N
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ap910401
Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10 
 
Contextual Info: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology
 
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MGA-444940-02 
ap910401
mmic code h5
MWT-PH15
WPS44
MMA-054025-Q3
MWT-10
mps080817nxx
445122
MGA-242740-02
MMA-343737-Q10
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MPS 808
Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820 
 
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical
 
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MPS 808
Abstract: MwT-10 252724 445122 MwT-h17 MIL-PRF38535 Power Amplifier MMIC 2.6 GHz 0218-H4N2 .H2 sot89 solar voltage regulator 
 
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical
 
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 
 
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
 
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MS-013
10-Pin
5M-1994 
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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Quality System
Abstract: GaN Amplifiers Wireless Amplifiers Hybrid Modules mwtinc GM-141526-H4 
 
Contextual Info: MMIC Amplifiers High Performance/Quality MMIC Based on InGaP HBT, pHEMT, and Linear MESFET Technologies High Linearity, Fully Matched WiMax Power Amplifiers Military Screening Available on Hermetically Sealed Package Products Low Cost Commercial Products
 
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